Professional Experience


  • Ph.D. Electrical Engineering – University of California, Santa Barbara – Dec. 2010
  • M.S. Electrical Engineering – University of California, Santa Barbara – June 2008

Industrial and Academic Positions

  • Assistant Professor, School of Electrical, Computer and Energy Engineering, Arizona State University – 2013-Present
  • Member of Technical Staff, Transphorm, Goleta, California – 2010-2013
  • Graduate Student Researcher, UC Santa Barbara, California – 2006-2010

Research highlights

Demonstrated the first Gallium Nitride vertical transistors (CAVETs) for high voltage high power application

Developed a reliable method of using very thin AlN layer to suppress diffusion of Mg into regrown layers during a MOCVD regrowth and demonstrated working of devices based on this technique

Demonstrated a successful blend of MOCVD and MBE techniques to achieve working vertical devices with record low on-resistance

Establish that theory of distributed surface donor traps in AlGaN/GaN HEMTs as a counter theory to the single-energy donor level (This work was done with Dr. Masataka Higashiwaki. The theoretical work was done independently by Dr. Maosheng Miao in Prof. Chris Van de Walle’s group and later collaborative work led to several publications and presentations )

Led the effort of building 1200V lateral HEMTs (GaN on Si) at Transphorm. These devices were used in the inverter to drive both a Permanent Magnet motor and Induction Motor for the first time.