Publications

Publications

  1. “Design of a 1200V GaN vertical MOS transistor for power switching operation.” Wenwen Li and Srabanti Chowdhury, (In preparation for) IEEE Transaction on Electron Devices, 2014.
  2. “A discussion on 1200V GaN vertical JFET design rules and challenges for power switching operation.” Dong Ji and Srabanti Chowdhury, (In preparation for) IEEE Transaction on Electron Devices, 2014.
  3. “Lateral and Vertical transistors using the AlGaN/GaN heterostructure.” Srabanti Chowdhury and Umesh K Mishra, IEEE Transaction on Electron Devices, Volume 60, Issue 10, Pages 3060-3066
  4. “Current status and scope of gallium nitride-based vertical transistors for high-power electronics application.” Srabanti Chowdhury, Brian L Swenson, Man Hoi Wong and Umesh K Mishra, Semiconductor Science and Technology Volume 28, Number 7 074014(8pages) [Invited Review]- Editorial pick for 2013
  5. “CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion.” Srabanti Chowdhury, Man Hoi Wong, Brian L Swenson and Umesh K. Mishra Electron Device Letters, IEEE Volume 33, Issue 1, January 2012 Pages: 41 – 43
  6. “Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers.” Srabanti Chowdhury, Brian L. Swenson, Jing Lu, and Umesh K. Mishra, Jpn. J. Appl. Phys Volume 50 October, 2011 Pages: 101002-101007
  7. “Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon.” Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. DenBaars, James S. Speck, and Umesh K. Mishra, Phys. Status Solidi C 8, No. 7–8, Pages: June 2011, 2086
  8. “Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions.” Luke Gordon, Mao-Sheng Miao, Srabanti Chowdhury, Masataka Higashiwaki, Umesh K Mishra and Chris G Van de Walle, J. Phys. D: Appl. Phys. Volume 4, December 2010, Pages: 505501(1¬8)
  9. “Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures.” Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson, and Umesh K. Mishra, Applied Physics Letters, Volume 97, Issue 22, October 2010, Pages: 222104-1–222104-3
  10. “Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition.” S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdhury, S. P. DenBaars, J. S. Speck, and U. K. Mishra, Applied Physics Letters, Volume 97, Issue 14, October 2010, Pages: 142109-1–142109-3
  11. “Distribution of donor states on etched surface of AlGaN/GaN hetrostructures.” Masataka Higashiwaki, Srabanti Chowdhury, Maosheng Miao, Brian L.Swenson, Chris G. Van de Walle and Umesh K. Mishra, Journal of Applied Physics, Volume 108, Issue 6, September 2010, Pages: 063719-1–063719-6
  12. “Enhancement and Depletion Mode AlGaN/GaN CAVET with Mg-Ion-Implanted GaN as Current Blocking Layer.” Srabanti Chowdhury, Brian L Swenson and Umesh K. Mishra, Electron Device Letters, IEEE Volume 29, Issue 6, June 2008 Pages: 543 – 545

Patents

  1. 01/16/14 – 20140015066 – Semiconductor electronic components with integrated current limiters
  2. 01/02/14 – 20140001557 – Semiconductor devices with integrated hole collectors
  3. 10/10/13 – 20130264578 – N-polar iii-nitride transistors
  4. 04/11/13 – 20130088280 – High power semiconductor electronic components with increased reliability
  5. 03/07/13 – 20130056744 – Semiconductor devices with guard rings
  6. 12/20/12 – 20120319127 – Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
  7. 06/21/12 – 20120153390 – Transistors with isolation regions

Provisional Patents filed (as an Assistant Professor at ASU)

  • “Tunnel Vertical FET using Nitrogen polar GaN”
  • “GaN based vertical metal oxide semiconductor (MOS) and junction field effect transistors (JFET’s)”

4 Patents under filing process; 13 Total Patents

Conference Presentations (Invited)

  1. “GaN based power electronic devices for next generation power conversion.” The International Workshop on Nitride Semiconductors (IWN), 2014, Poland
  2. “GaN based devices offers efficient power conversion for the next generation automotive application.” IEEE Lecture series – Transportation Electrification, ASU, April 2014
  3. “GaN switches offer the next generation power conversion solution.” International Semiconductor Device Research Symposium (ISDRS), Maryland, USA, December 2013
  4. “Current Status of GaN-based Power Electronic Devices and their Fabrication Challenges.” Plasma-Therm Symposium, Stanford, September, 2013
  5. “Lateral and Vertical Power Devices in Gallium Nitride.” Topical Workshop on Heterostructure Microelectronics (TWHM), Gifu, Japan, 2011
  6. Conference Presentations (Contributed)

    1. “First demonstration of high performance 1kV AlGaN/GaN HEMTs on Si and their use in the drive of both an induction motor and a permanent magnet motor.” Srabanti Chowdhury, Don Kebort, Jesus Magadia, Dietrich Graumann, Nick Fichtenbaum, Jim Honea, Yifeng Wu, Primit Parikh and Umesh K Mishra, The International Workshop on Nitride Semiconductors (IWN), Sapporo Japan, 2012
    2. “Study of Thermal Oxidation Effects on Surface Barrier Height of AlGaN/GaN Heterostructures.” Masataka Higashiwaki, Srabanti Chowdhury, Brian L. Swenson and Umesh K. Mishra, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010
    3. “Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon.” Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. DenBaars, James S. Speck2, and Umesh K. Mishra, The International Workshop on Nitride Semiconductors (IWN), Florida, USA, 2010
    4. “Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer.” Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, Device Research Conference (DRC), South Bend, USA, 2010
    5. “Low on resistance AlGaN/GaN Current Aperture Vertical Electron Transistors achieved with MBE regrown channels to suppress Mg diffusion from Current Blocking Layers.” Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson and Umesh K. Mishra, International Symposium on Compound Semiconductors (ISCS), Takamatsu, Japan, 2010
    6. “Estimation of surface barrier height of etched AlGaN barrier in AlGaN/GaN heterostructures.” Srabanti Chowdhury, Masataka Higashiwaki, Maosheng Miao, Brian L. Swenson, Chris G. Van de Walle, and Umesh K. Mishra, International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, 2009
    7. “Investigation of Mg Ion-Implanted GaN as Current Blocking Layer in a CAVET.” Srabanti Chowdhury, Brian L. Swenson, Stacia Keller and Umesh K. Mishra, Electronic Materials Conference (EMC), Penn State, USA, 2009
    8. “AlGaN/GaN HEMT and CAVET for high voltage switching application.” Srabanti Chowdhury, Brian L. Swenson, Chang Soo Suh, Yuvaraj Dora, Stacia Keller and Umesh K. Mishra, Government Microcircuit Applications and critical technology conference (GOMACTech), Orlando, USA, 2009
    9. “AlGaN/GaN CAVET on GaN Substrates with Al Ion Implanted Current Blocking Layer.” Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, The International Workshop on Nitride Semiconductors (IWN), Montreux, Switzerland, 2008
    10. “Depletion and Enhancement mode AlGaN/GaN CAVET with Al ion implanted current blocking layer.” Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars, and Umesh K. Mishra, International Symposium on Compound Semiconductors (ISCS), Rust, Germany, 2008
    11. “Depletion and Enhancement mode AlGaN/ GaN CAVET.” Srabanti Chowdhury, Brian L. Swenson, Steven P. DenBaars and Umesh K. Mishra, Electronic Materials Conference (EMC), Santa Barbara, USA, 2008
    12. “Storage, Transmission and Recognition of alphabets and words with enhanced compression.” Kallol Bhattacharya, Srabanti Chowdhury, Shirsha Bhajan, Dipankar Biswas, and Krishnendu Goswami, International Conference on Computers and Devices for Communication (CODEC), Kolkata, India, 2004
    13. “Unique representation of a binary image through a set of numbers.” Srabanti Chowdhury, Shirsha Bhajan and D. Biswas, Horizons of Telecommunication (HOT), Kolkata, India, 2003

    Project Reviews

    • Project review presentation on recent progress in CAVET with MBE regrown channel, Toyota Headquarters, Nagoya, Japan, January and July 2010
    • ATLAS simulation of HEMT with InGaN back-barrier, Millimeter-wave Initiative for Nitride Electronics (MINE) review, UCSB, California, 2006