Category Archives: News

Prof. Zhao Won $1.5MM DOE ARPAe PNDIODES Program


The ASU team proposes a comprehensive research program to advance fundamental knowledge in the selective area growth of GaN materials in order to achieve selective area doping, leading to the development of high-performance GaN vertical power transistors. The team will develop a new fabrication process and determine the opportunities to solve the challenges of selective area growth for doping in GaN materials. The team will also conduct a materials study and investigate several issues related to GaN selective area epitaxial growth. If successful, the project will demonstrate generally usable p-n junctions for vertical GaN power devices that meet PNDIODES program targets.


Nonpolar InGaN Solar Cell Paper Highlight in Semiconductor Today!

Arizona State University and University of California Santa Barbara (UCSB) in the USA have compared indium gallium nitride (InGaN) solar cells produced using non-polar, semi-polar and polar substrates [Xuanqi Huang et al, Appl. Phys. Lett., vol110, p161105, 2017]. The non-polar m-plane devices showed the best overall photovoltaic (PV) performance.

InGaN solar cells should be able to convert photons of energy spanning the solar range, with InN having an energy gap of 0.7eV (infrared) and GaN 3.4eV (ultraviolet). In practice, charge polarization of the III-nitride bond leads to strong electric fields in heterostructures arising from spontaneous and strain effects. Growing III-nitride structures in non-polar or semi-polar directions can eliminate or at least reduce these fields and improve performance.

Our EDL Paper on Vertical GaN Power Diode was Reported by Tech Media Semiconductor Today!

Arizona State University in the USA has been studying the effects of gallium nitride (GaN) buffer layer thickness and drift layer doping on the performance of vertical p-n and Schottky barrier diodes [Houqiang Fu et al, IEEE Electron Device Letters, published online 4 April 2017]. Without passivation or field plates, some p-n devices reached breakdown voltages of more than 1000V and achieved specific on-resistances as low as 3mΩ-cm2.