Prof. Zhao Won $1.5MM DOE ARPAe PNDIODES Program


The ASU team proposes a comprehensive research program to advance fundamental knowledge in the selective area growth of GaN materials in order to achieve selective area doping, leading to the development of high-performance GaN vertical power transistors. The team will develop a new fabrication process and determine the opportunities to solve the challenges of selective area growth for doping in GaN materials. The team will also conduct a materials study and investigate several issues related to GaN selective area epitaxial growth. If successful, the project will demonstrate generally usable p-n junctions for vertical GaN power devices that meet PNDIODES program targets.