{"id":17,"date":"2020-05-19T17:55:04","date_gmt":"2020-05-20T00:55:04","guid":{"rendered":"https:\/\/www.ece.iastate.edu\/houqiangfu\/?page_id=17"},"modified":"2022-07-17T10:47:18","modified_gmt":"2022-07-17T17:47:18","slug":"research","status":"publish","type":"page","link":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/research\/","title":{"rendered":"Research"},"content":{"rendered":"

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Research Interests<\/strong>:<\/h3>\n

Broad research interests span the fields of solid-state electronics, optoelectronics and photonics, semiconductors, device physics, and nanotechnology. Specific interests include third-generation wide\/ultrawide bandgap (WBG\/UWBG) semiconductors (GaN and nitride alloys, Ga2O3, AlN, BN, and diamond) for applications in electronics (e.g., power electronics and ICs, WBG\/UWBG CMOS and RRAM for computing, RF\/microwave devices and MMICs, sensors) and photonics (e.g., optoelectronic devices, waveguides, nonlinear optics, quantum photonics), MOCVD epitaxial growth, nanofabrication and nano-scale characterization, new physics, materials, and devices for future solid-state (opto)electronics and photonics.<\/p>\n

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Research Details:<\/strong><\/h3>\n

The research at the Semiconductor Materials and Devices Group is focused on the development of novel and advanced solid-state devices and systems for power electronics, energy efficiency, renewable energies, next-generation communication systems, extreme-environment applications (e.g., high temperature and radiation), UV-visible integrated photonics, and biochemical sensing applications. Our research involves MOCVE\/MBE epitaxial growth, nanofabrication, and characterization of electronic and optical semiconductor materials, devices, and systems.<\/p>\n

Our research can be categorized into the following Thrust Areas:<\/strong><\/h4>\n

Thrust Area 1: Next-Generation Power Electronics and Computing based on WBG\/UWBG Semiconductors.<\/strong><\/h4>\n

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Thrust Area 2: Extreme-Environment Electronics (e.g., High Temperature and Radiation) and Sensors (e.g., Biochemical).<\/strong><\/h4>\n

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Thrust Area 3: High-Frequency and High-Power RF\/Microwaves Electronics and ICs.<\/strong><\/h4>\n

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Thrust Area 4: MOCVD\/MBE Epitaxial Growth, Fundamental Physics and Electronic and Optical Properties of Novel Materials.<\/strong><\/h4>\n

\"\"<\/p>\n","protected":false},"excerpt":{"rendered":"

Research Interests: Broad research interests span the fields of solid-state electronics, optoelectronics and photonics, semiconductors, device physics, and nanotechnology. Specific interests include third-generation wide\/ultrawide bandgap (WBG\/UWBG) semiconductors (GaN and nitride alloys, Ga2O3, AlN, BN, and diamond) for applications in electronics (e.g., power electronics and ICs, WBG\/UWBG CMOS and RRAM for computing, RF\/microwave devices and MMICs,…<\/p>\n","protected":false},"author":185,"featured_media":0,"parent":0,"menu_order":7,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-17","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/17","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/users\/185"}],"replies":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/comments?post=17"}],"version-history":[{"count":0,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/17\/revisions"}],"wp:attachment":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/media?parent=17"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}