{"id":20,"date":"2020-05-19T17:55:30","date_gmt":"2020-05-20T00:55:30","guid":{"rendered":"https:\/\/www.ece.iastate.edu\/houqiangfu\/?page_id=20"},"modified":"2026-03-17T21:28:13","modified_gmt":"2026-03-18T04:28:13","slug":"publications","status":"publish","type":"page","link":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/publications\/","title":{"rendered":"Publications"},"content":{"rendered":"

Book Chapters and Articles (Invited)<\/strong><\/span><\/h3>\n

5. H. Fu<\/strong>, K. Fu, D. Wang, D. H. Mudiyanselage, H. D. Ellis, I. Rahaman, C. Chang, S. M. Goodnick, D. J. Smith, R. J. Nemanich, F. A. Ponce, and Y. Zhao, \u201cSelective Area Regrowth and Doping for Vertical GaN Power Devices\u201d, chapter in \u201cGallium Nitride and Related Materials – Device Processing and Materials Characterization for Power Electronics Applications<\/strong><\/em>\u201d, edited by Isik C. Kizilyalli, Jung Han, James S. Speck, and Eric P. Carlson, Springer, (2024).<\/p>\n

4. H. Chen, J. Zhou, H. Fu<\/strong>, and Y. Zhao, \u201cOctave-spanning supercontinuum generation in AlN waveguides,\u201d chapter in \u201cUltrawide Bandgap Semiconductors<\/em><\/strong>,\u201d vol. 104, in the Semiconductors and Semimetals series (2021).<\/p>\n

3. H. Fu<\/strong>, K. Fu, and Y. Zhao, \u201cVertical GaN-on-GaN power devices\u201d, chapter in \u201cWide Bandgap Semiconductor-Based Electronics<\/em><\/strong><\/a>,\u201d edited by Prof. S. Pearton, and Prof. F. Ren, IOP publishing, (2020).<\/p>\n

2. H. Fu<\/strong>, K. Fu, and Y. Zhao, \u201cBetter etching enhances selective area doping for vertical GaN power devices<\/a>,\u201d Compound Semiconductor<\/em><\/strong>, vol. 25, no. 8, Dec. 2019.<\/p>\n

1. H. Fu<\/strong> and Y. Zhao, \u201cEfficiency droop in InGaN\/GaN LEDs\u201d, chapter in \u201cNitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications<\/em><\/strong><\/a>,\u201d edited by Prof. J. J. Huang, Prof. H. C. Kuo, and Prof. S. C. Shen, 2nd edition, Woodhead publishing, (2018).<\/p>\n

\n

Journal Publications (Google Scholar<\/a>)<\/span>\u00a0<\/span><\/h3>\n

128. B. Da, F. Alema, J. Xie, W. Brand, V. Soukhoveev, D. Wang, X. Wei, D. H. Mudiyanselage, A. Osinsky, and H. Fu*, \u201cTemperature-dependent electrical characterizations of high-current-density AlN quasi-vertical Schottky barrier diodes on AlN substrates<\/a>,\u201d APL Electronic Devices<\/em> <\/strong>2, 016130 (2026).<\/p>\n

127. F. Alema, W. Brand, D. H. Mudiyanselage, B. Da, H. Fu, and A. Osinsky, \u201cNitrogen doping of metal-organic chemical vapor deposition \u03b2-Ga\u2082O\u2083 using nitric oxide<\/a>, J. Vac. Sci. Technol. A<\/strong><\/em> 44, 032701 (2026).<\/p>\n

126. B. Da, D. H. Mudiyanselage, D. Wang, J. Xie, X. Wei, H. Fu<\/strong>, \u201cEffects of oxygen thermal annealing on AlN trench metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 127, 233504 (2025).<\/p>\n

125. D. H. Mudiyanselage*, A. E. Yekta*, R. Mandia, B. Da, D. Wang, Z. He, J. Xie, D. J. Smith, R. J. Nemanich, H. Fu<\/strong>, \u201cMaterial and electrical characterization of ultrawide bandgap BN\/AlN metal-insulator-semiconductor (MIS) Schottky diodes<\/a>,\u201d J. Vac. Sci. Technol. A<\/strong><\/em> 43, 062701 (2025). (*Equal contribution)<\/p>\n

124. B. Da, D. H. Mudiyanselage, D. Wang, Z. He, J. Xie, H. Fu<\/strong>, \u201cUltrawide bandgap AlN trench metal-oxide-semiconductor transistors (MOSFETs) on single-crystal AlN substrates<\/a>,\u201d IEEE Trans. Mat. Electron Devices<\/strong><\/em> 2, 103 (2025).<\/p>\n

123. Z. He, D. H. Mudiyanselage, D. Wang, B. Da, J. Xie, M. Khoury, Y. Zhao, and H. Fu<\/strong>, \u201cElectrical and reliability study of GaN E-mode MISHEMTs with two-step etching gate recess<\/a>,\u201d IEEE Trans. Mat. Electron Devices<\/strong><\/em> 2, 108 (2025).<\/p>\n

122. J. Xie, B. Da, D. Wang, D. H. Mudiyanselage, Z. He, H. Fu<\/strong>, \u201cUltrawide bandgap lateral AlN Schottky barrier diodes with graded AlGaN contact layer on single\u2010crystal AlN substrate<\/a>,\u201d Phys. Status Solidi A<\/strong><\/em> 222, e202500568 (2025).<\/p>\n

121. D. Wang, H. D. Ellis, D. H. Mudiyanselage, Z. He, B. Da, I. Rahama, I. Baranowski, S. Gangwal, D. Vasileska, K. Fu, and H. Fu<\/strong>, “Multi-kV AlGaN\/GaN heterojunction Schottky barrier diodes with hydrogen plasma guard array termination<\/a>,\u201d IEEE Electron Device Lett. <\/em><\/strong>46, 960 (2025).<\/p>\n

120. D. H. Mudiyanselage, D. Wang, Z. He, B. Da, J. Xie, and H. Fu<\/strong>, \u201cHigh-temperature electrical characteristics of high-voltage AlN Schottky barrier diodes on single-crystal AlN substrates<\/a>,\u201d IEEE Trans. Electron Devices<\/strong><\/em> 72, 1637 (2025).<\/p>\n

119. M. I. Kabir*, B. Da*, S. Mao, D. Wang, H. Fu<\/strong>, and L Que, \u201cUltrasensitive detection of lactate dehydrogenase using GaN HEMT sensors<\/a>,\u201d ACS Appl. Electron. Mater.<\/strong><\/em> 7, 6117 (2025). (*Equal contribution)<\/p>\n

118. D. Wright, E. Guzman, M. S. H. Bijoy, R. B. Wilson, D. H. Mudiyanselage, H. Fu<\/strong>, F. Kargar, and A. A. Balandin, \u201cAcoustic phonon characteristics of (001) and (\u2060-201) \u03b2-Ga2O3 single crystals investigated with Brillouin\u2013Mandelstam light scattering spectroscopy<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 127, 052201 (2025).<\/p>\n

117. B. Da, D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu<\/strong>, \u201cHigh-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates<\/a>,\u201d Appl. Phys. Express<\/strong><\/em> 17, 104002 (2024).<\/p>\n

Featured by Compound Semiconductor <\/strong><\/span><\/p>\n

Featured by Semiconductor Today<\/strong><\/span><\/p>\n

116. D. H. Mudiyanselage, D. Wang, B. Da, Z. He, and H. Fu<\/strong>, \u201cOver 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor<\/a>,\u201d Appl. Phys. Express<\/strong><\/em> 17, 074001 (2024).<\/p>\n

Featured by Compound Semiconductor\u00a0<\/strong><\/span><\/p>\n

115. D. Wright, D. H. Mudiyanselage, E. Guzman, X. Fu, J. Teeter, B. Da, F. Kargar, H. Fu<\/strong>, and A. A. Balandin, \u201cAcoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 125, 142202 (2024).<\/p>\n

114. B. Li, I. Rahaman, H. D. Ellis, H. Fu<\/strong>, Y. Zhao, Y. Cai, B. Zhang, and K. Fu, \u201cPlasma treatment technologies for GaN electronics<\/a>,\u201d Electronics<\/em><\/strong> 13, 4343 (2024).<\/p>\n

113. I. Rahaman, H. D. Ellis, C. Chang, D. H. Mudiyanselage, M. Xu, B. Da, H. Fu<\/strong>, Y. Zhao, and K. Fu, \u201cEpitaxial growth of Ga2O3: a review,\u201d Materials<\/strong> <\/em>17, 4261 (2024)<\/a>.<\/p>\n

112. Z. He, X. Zhang, T. S. Pieshkov, A. E. Yekta, T. Terlier, D. H. Mudiyanselage, D. Wang, B. Da, M. Xu, S. Luo, C. Chang, T. Li, R. J. Nemanich, Y. Zhao, P. M. Ajayan, and H. Fu<\/strong>, \u201cReduced trap state density in AlGaN\/GaN HEMTs with low-temperature CVD-grown BN gate dielectric<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 125, 042106 (2024).<\/p>\n

111. D. H. Mudiyanselage, B. Da, J. Adivarahan, D. Wang, Z. He, K. Fu, Y. Zhao, and H. Fu<\/strong>, \u201c\u03b2-Ga2O3-based heterostructures and heterojunctions for power electronics: A review of the recent advances<\/a>,\u201d Electronics<\/strong> <\/em>13, 1234 (2024).<\/p>\n

110. Q. Huang, X. Deng, L. Zhang, W. Lin, W. Cheng, G. Yu, T. Ju, D. H. Mudiyanselage, D. Wang, H. Fu<\/strong>, Z. Zeng, B. Zhang, and F. Xu, \u201cHigh-performance GaN metal\u2013insulator\u2013semiconductor high electron mobility transistors (MIS-HEMTs) using Sc0.2Al0.8N\/SiNx as composite gate dielectric<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 124, 233510 (2024).<\/p>\n

109. D. H. Mudiyanselage, D. Wang, Z. He, B. Da, and H. Fu<\/strong>, \u201cHigh-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD<\/a>,\u201d Appl. Phys. Express<\/strong><\/em> 17 014005 (2024).<\/p>\n

108. M Nicoletto, A Caria, F Rampazzo, C De Santi, M Buffolo, F Rossi, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, A. Gasparotto, C. Becht, U. T. Schwarz, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cV-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis<\/a>,\u201d IEEE Trans. Electron Devices<\/em><\/strong>\u00a071, 2051 (2024).<\/p>\n

107. M. Nicoletto, A. Caria, C. De Santi, M Buffolo, M. Alasio, F. Mercinelli, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cTCAD modeling and simulation of dark current-voltage characteristics in high-periodicity InGaN\/GaN multiple-quantum-wells (MQWs) solar cells<\/a>,\u201d IEEE J. Photovolt.<\/em> <\/strong>14, 450 (2024).<\/p>\n

106. C. Yang, C. Jiang, W. Niu, D. Hao, H. Huang, H. Fu<\/strong>, J. Miao, X. Liu, X. Zou, F. Shan, and Z. Yang, \u201cLow-power MoS2 metal\u2013semiconductor field effect transistors (MESFETs) based on standard metal-semiconductor contact<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 124, 073504 (2024).
\nSelected as \u201cEditor\u2019s Picks\u201d in Appl. Phys. Lett.<\/strong><\/span><\/p>\n

105. X. Zhu, W. Niu, H. Fu<\/strong>, J. Miao, H. Huang, X. He, X. Liu, X. Zou, F. Shan, and Z. Yang, \u201cPerformance-tunable MoS2 homojunction photodiode based on different built-in electric field<\/a>,\u201d IEEE Trans. Electron Devices<\/em><\/strong>\u00a071, 2192 (2024).<\/p>\n

104. D. Wang, D. H. Mudiyanselage, Z. He, B. Da, and H. Fu<\/strong>, \u201cInstability of on-resistance in vertical GaN PIN diodes under high-temperature and voltage stress<\/a>,\u201d IEEE Trans. Electron Devices <\/em><\/strong>71, 1681 (2024).<\/p>\n

103. K. Fu, S. Luo, H. Fu<\/strong>, K. Hatch, S. R. Alugubelli, H. Liu, M. Xu, Z. Mei, Z. He, T. Li, J. Zhou, F. A. Ponce, R. Nemanich, and Y. Zhao, \u201cGaN based threshold switching selector devices working at 500\u00b0C enabled by interface engineering for harsh environment memory applications<\/a>\u201d, IEEE Trans. Electron Devices<\/em><\/strong> 71, 1641 (2024).<\/p>\n

102. D. Wang, D. H. Mudiyanselage, and H. Fu<\/strong>, \u201cDesign of kV-class and low RON E-mode \u03b2-Ga2O3 current aperture vertical transistors with delta-doped \u03b2-(AlxGa1-x)2O3\/Ga2O3 heterostructure<\/a>,\u201d IEEE Trans. Electron Devices<\/strong><\/em>\u00a070, 5795 (2023).<\/p>\n

101. D. H. Mudiyanselage, R. Mandia, D. Wang, J. Adivarahan, Z. He, K. Fu, Y. Zhao, M. R. McCartney, D. J. Smith, and H. Fu<\/strong>, \u201cAnisotropic electronic properties of NiOx\/\u03b2-Ga2O3 p-n heterojunctions on (-201), (001), and (010) crystal orientations<\/a>\u201d, Appl. Phys. Express<\/em><\/strong> 16, 094002 (2023).
\nSelected as \u201cSpotlights 2023\u201d in Appl. Phys. Express<\/strong><\/span><\/p>\n

Selected as \u201cHighlights of 2023\u201d in Appl. Phys. Express<\/strong><\/span><\/p>\n

100. S. Ghosh, D. H. Mudiyanselage, F. Kargar, Y. Zhao, H. Fu<\/strong>, and A. Balandin, \u201cTemperature dependence of low-frequency noise characteristics of NiOx\/\u03b2-Ga2O3 p-n heterojunction diodes<\/a>,\u201d Adv. Electron. Mater.<\/strong> <\/em>2300501, (2023)<\/p>\n

99. M. Nicoletto, A. Caria, F. Rampazzo, C. De Santi, M. Buffolo, G. Mura, F. Rossi, X. Huang, H. Fu<\/strong><\/em>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cInfluence of V-Pits on the turn-on voltage of GaN-based high periodicity multiple quantum well solar cells<\/a>,\u201d IEEE J. Photovolt.<\/strong><\/em> 13, 891 (2023).<\/p>\n

98. C. Zhou, W. Niu, L. Li, D. Hao, H. Huang, H. Fu<\/strong>, X. Liu, X. Zou, F. Shan, and Z. Yang, \u201cSurface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 123, 123506 (2023)<\/p>\n

97. X. Liu, Z. Wang, H. Huang, C. Liu, W. Niu, Z. Xie, D. Hao, H. Fu<\/strong>, X. Liu, X. Zou, F. Shan, and Z. Yang, \u201cMicroneural network system based on MoS2\/h-BN\/graphene van der Waals heterojunction transistor<\/a>,\u201d ACS Appl. Nano Mater.<\/strong><\/em> 6, 16046 (2023)<\/p>\n

96. S. Ghosh, D. H. Mudiyanselage, S. Rumyantsev, Y. Zhao, H. Fu<\/strong>, S. Goodnick, R. Nemanich, and A. A. Balandin, \u201cLow-frequency electronic noise in\u00a0 \u03b2-(AlxGa1\u2212x)2O3 Schottky barrier diodes<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 122, 212109 (2023).<\/p>\n

95. F. Angeles, S. Khan, V. Ortiz, M. Xu, S. Luo, D. Mudiyanselage, H. Fu<\/strong>, Y. Zhao, and R. Wilson, \u201cPicosecond magneto-optic thermometry for improved spatiotemporal resolution of nanoscale thermal transport in AlN thin films<\/a>,\u201d APL Mater.<\/em><\/strong> 11, 061127 (2023)<\/p>\n

94. A. Caria, C. De Santi, M. Buffalo, M. Nicoletto, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, M. Meneghini, \u201cDegradation of GaN-based multiple quantum wells solar cells under forward bias: investigation based on optical measurements and steady-state photo capacitance<\/a>\u201d, IEEE Trans. Electron Devices<\/em><\/strong> 70, 3624 (2023).<\/p>\n

93. C. Leblanc, D. H. Mudiyanselage, S. Song, H. Zhang, A. Davydov, H. Fu, and D. Jariwala, \u201cVertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D \u03b2-Ga2O3<\/a>,\u201d Nanoscale<\/em><\/strong> 15, 9964 (2023).<\/p>\n

92. T. Chen, J. Zhang, X. Zhang, C. Chen, L. Zhang, Y. Hu, Y. Ma, X. Wei, X. Zhou, W. Tang, A. Yang, B. Li, S. Dai, L. Xu, W. Shi, H. Fu<\/strong>, Y. Fan, Y. Cai, Z. Zeng, K. Zhang, and B. Zhang \u201cUltrahigh responsivity \u03b2-Ga2O3\/BP junction field effect phototransistors for UV\/IR dual-band detection<\/a>,\u201d IEEE Sensor J.<\/em><\/strong> 23, 15504 (2023).<\/p>\n

91. Y. Hu, L. Zhang, T. Chen, Y. Ma, W. Tang, Z. Huang, B. Li, K. Xu, D. H. Mudiyanselage, H. Fu<\/strong>, X. Zhang, Z. Zeng, and B. Zhang, \u201cHigh performance \u03b5-Ga2<\/sub>O3<\/sub> solar-blind ultraviolet photodetectors on Si (100) substrate with molybdenum buffer layer<\/a>,\u201d Vacuum<\/em><\/strong> 213, 112130 (2023)<\/p>\n

90. D. H. Mudiyanselage, D. Wang, and H. Fu<\/strong>, \u201cUltrawide bandgap vertical \u03b2-(AlxGa1-x)2O3 Schottky barrier diodes on free-standing \u03b2-Ga2O3 substrates<\/a>,\u201d J. Vac. Sci. Technol. A<\/strong><\/em> 41, 023201 (2023).<\/p>\n

89. Z. Wang, G. Yu, X. Yuan, X. Deng, L. Zhang, S. Dai, G. Yang, L. Zhang, R. Ji, X. Kan, X. Zhang, H. Fu<\/strong>, Z. Zeng, R. K.-Y. Wong, Y. Cai, and B. Zhang, \u201cLow leakage current in isolated AlGaN\/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 122, 062105 (2023)<\/p>\n

88. M. Nicoletto, A. Caria, C. De Santi, M. Buffolo, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cOptically induced degradation due to thermally activated diffusion in GaN-based InGaN\/GaN MQW solar cells<\/a>,\u201d IEEE Trans. Electron Devices <\/strong><\/em>70, <\/em>1115 (2023).<\/p>\n

87. P. Peri, K. Fu, H. Fu<\/strong>, J. Zhou, Y. Zhao, and D. J. Smith, \u201cImpact of substrate morphology and structural defects in freestanding gallium nitride on the breakdown characteristics of GaN-on-GaN vertical devices<\/a>,\u201d J. Electron. Mater.<\/strong><\/em> 52, 3343 (2023).<\/p>\n

86. Y. Zhao, M. Xu, X. Huang, J. Lebeau, T. Li, D. Wang, H. Fu<\/strong>, K. Fu, X. Wang, J. Lin, and H. Jiang, \u201cToward high efficiency at high temperatures: recent progress and prospects on InGaN-based solar cells<\/a>,\u201d Mater. Today Energy<\/em><\/strong> 31, 101229 (2023).<\/p>\n

85. X. Wei, W. Shen, X. Zhou, W. Tang, Y. Ma, T. Chen, D. Wang, H. Fu<\/strong>, X. Zhang, W. Lin, G. Yu, Y. Cai, and B. Zhang, \u201c2.34kV\/1.50mohm p-GaN stripe array gated hybrid anode diode with low turn-on voltage<\/a>,\u201d IEEE Electron Device Lett.<\/em><\/strong> 44, 13 (2023).<\/p>\n

84. Z. Wang, X. Deng, H. Fu<\/strong>, L. Zhang, G. Yu, K. Xu, F. Yang, Y. Fan, and B. Zhang, \u201cImpact of protective layer structures on high-temperature annealing of GaN<\/a>,\u201d Phys. Status Solidi A<\/em><\/strong> 2200505, (2022)<\/p>\n

83. Z. Xing, H. Zhang, Y. Sun, L. Yang, K. Hu, K. Liang, D. Wang, H. Fu<\/strong>, and H. Sun, \u201cNormally-off AlGaN\/GaN-based HEMTs with decreasingly graded AlGaN cap layer<\/a>,\u201d J. Phys. D: Appl. Phys.<\/em><\/strong> 56, 025105 (2022).<\/p>\n

82. M. Nicoletto, A. Caria, C. De Santi, M. Buffolo, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cRole of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 num laser excitation<\/a>,\u201d Microelectron. Reliab.<\/strong><\/em> 138, 114727 (2022)<\/p>\n

81. K. Fu, C. Yang, J. Zhou, T. H. Yang, J. Montes, H. Fu<\/strong>, and Y. Zhao, \u201cGaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 121, 092103 (2022).<\/p>\n

80. X. Zhang, X. Duan, W. Niu, X. Liu, X. Zou, H. Huang, D. H. Mudiyanselage, H. Fu<\/strong>, B. Jiang, G. Liu, and Z. Yang, \u201cThe mechanism of performance variations in MoS2 vertical Schottky metal-semiconductor photodiode based on thermionic emission theory<\/a>,\u201d IEEE Trans. Electron Devices <\/em><\/strong>69, 5644 (2022).<\/p>\n

79. Y. Ma, T. Chen, X. Zhang, W. Tang, B. Feng, Y. Hu, L. Zhang, X. Zhou, X. Wei, K. Xu, D. Mudiyanselage, H. Fu<\/strong>, and B. Zhang, “High-photoresponsivity self-powered \u03b1-,\u03b5-, and \u03b2-Ga2O3\/p-GaN heterojunction UV photodetectors with an in situ GaON layer by MOCVD<\/a>,” ACS Appl. Mater. Interfaces <\/strong><\/em>14, 35194 (2022).<\/p>\n

78. D. H. Mudiyanselage, D. Wang, Y. Zhao, and H. Fu<\/strong>, \u201cIntersubband Transitions in Nonpolar and Semipolar III-Nitrides: Materials, Devices, and Applications<\/a>,\u201d J. Appl. Phys.<\/em><\/strong> 131, 210901 (2022).<\/p>\n

77. Dawei Wang, Dinusha Herath Mudiyanselage, and H. Fu<\/strong>, \u201cDesign space of delta-doped \u03b2-(AlxGa1-x)2O3\/Ga2O3 high electron mobility transistors<\/a>,\u201d IEEE Trans. Electron Devices<\/strong><\/em> 69, 69 (2022).<\/p>\n

76. Dinusha Herath Mudiyanselage, Dawei Wang, and H. Fu<\/strong>, \u201cWide bandgap vertical \u03b2-Ga2O3\/GaN heterojunction p-n diodes with mesa edge termination<\/a>,\u201d IEEE J. Electron Devices Soc. <\/strong><\/em>10, 89 (2022).<\/p>\n

75. J. Yin, S. Chen, H. Chen, S. Li, H. Fu<\/strong>, and C. Liu, \u201c Design space of GaN vertical trench junction barrier Schottky diodes: comprehensive study and analytical modeling<\/a>,\u201d Electronics<\/strong><\/em> 11, 1972 (2022).<\/p>\n

74. M. Xu*, D. Wang*, K. Fu*, D. H. Mudiyanselage, H. Fu<\/strong>, and Y. Zhao, \u201cA Review of Ultrawide-Bandgap Materials: Properties, Synthesis, and Devices<\/a>,\u201d Oxford Open Mater. Sci. 2, itac004 (2022). (*Equal contribution)<\/p>\n

73. A. Carla, M. Nicoletto, C. De Santi, M. Buffolo, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, M. Meneghini, \u201cQuantum efficiency of InGaN-GaN multi-quantum well solar cells: experimental characterization and modeling<\/a>,\u201d J. Appl. Phys.<\/strong><\/em> 131, 224501 (2022).<\/p>\n

72.\u00a0W. Tang, Y. Ma, X. Zhang, X. Zhou, L. Zhang, X. Zhang, T. Chen, X. Wei, X. Lin, D. H. Mudiyanselage, H. Fu<\/strong>, and B. Zhang, \u201cHigh-quality (001) \u03b2-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 120, 212103 (2022).<\/p>\n

71. K. A. Hatch, D. C. Messina, H. Fu<\/strong>, K. Fu, Y. Zhao, and R. J. Nemanich, \u201cExternal charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy<\/a>,\u201d J. Appl. Phys.<\/strong> <\/em>131, 185301 (2022).<\/p>\n

70. X. Zhang, X. Wei, P. Zhang, H. Zhang, L. Zhang, X. Deng, Y. Fan, G. Yu, Z. Dong, H. Fu<\/strong>, Y. Cai, K. Fu, and B. Zhang, \u201cLow threshold voltage shift in AlGaN\/GaN MIS-HEMTs on Si substrate using SiNx\/SiON as composite gate dielectric<\/a>,\u201d Electronics<\/strong><\/em> 11, 895 (2022).<\/p>\n

69. X. Zhou, L. Zhang, X. Zhang, Y. Ma, X. Wei, T. Chen, W. Tang, K. Xu, Z. Zeng, X. Zhang, H. Fu<\/strong>, and B. Zhang, \u201cBand alignment of ultrawide bandgap \u03b5-Ga2O3\/h-BCN heterojunction epitaxially grown by metalorganic chemical vapor deposition<\/a>,\u201d Appl. Surf. Sci.<\/strong><\/em> 583, 152502 (2022).<\/p>\n

68. Y. Ma, X. Zhang, B. Feng, W. Tang, T. Chen, H. Qian, L. Zhang, X. Zhou, X. Wei, K. Xu, H. Fu<\/strong>, and B. Zhang, \u201cMis-cut direction of substrate effect on the photoresponse characteristic of \u03b2-Ga2O3 film<\/a>,\u201d Vacuum<\/strong><\/em> 198, 110886 (2022)<\/p>\n

67. H. Fu<\/strong>, K. Fu, C. Yang, H. Liu, K. A. Hatch, P. Peri, D. H. Mudiyanselage, B. Li, T. H. Kim, S. R. Alugubelli, P. Y. Su, D. C. Messina, X. Deng, C. Y. Cheng, R. V. Meidanshahi, X. Huang, H. Chen, T. H. Yang, J. Zhou, A. M. Armstrong, A. A. Allerman, E. T. Yu, J. Han, S. M. Goodnick, D. J. Smith, R. J. Nemanich, F. A. Ponce, and Y. Zhao, \u201cSelective area regrowth and doping for vertical GaN power transistors: challenges and recent progress<\/a>\u201d, Mater. Today<\/strong><\/em> 49, 296 (2021).<\/p>\n

66. H. Fu<\/strong>, K. Fu, S. Chowdhury, T. Palacios, and Y. Zhao, \u201cVertical GaN power devices: Device principles and fabrication technologies-Part II<\/a>,\u201d IEEE Trans. Electron Devices<\/strong><\/em> 68, 3212 (2021).<\/p>\n

65. H. Fu<\/strong>, K. Fu, S. Chowdhury, T. Palacios, and Y. Zhao, \u201cVertical GaN power devices: Device principles and fabrication technologies-Part I<\/a>,\u201d IEEE Trans. Electron Devices<\/strong><\/em> 68, 3200(2021).<\/p>\n

Most popular articles in IEEE Trans. Electron Devices in October and November 2022<\/strong><\/span><\/p>\n

64. T. Chen, X. Zhang, Y. Ma, T. He, X. Wei, W. Tang, W. Tang, X. Zhou, H. Fu<\/strong>, L. Zhang, K. Xu, C. Zeng, Y. Fan, Y. Cai, and B. Zhang, \u201cSelf-powered and spectrally distinctive nanoporous Ga2O3\/GaN epitaxial heterojunction UV photodetectors<\/a>,\u201d Adv. Photonics Res.<\/strong><\/em> 2, 2100049 (2021).<\/p>\n

63. C. Yang, H. Fu<\/strong>, P. Peri, K. Fu, T. H. Yang, J. Zhou, J. Montes, D. J. Smith, and Y. Zhao, \u201cEnhancement-mode gate-recess-free GaN based p-channel heterojunction field-effect transistor with ultra-low subthreshold swing<\/a>,\u201d IEEE Electron Device Lett.<\/strong><\/em> 42, 1128 (2021).<\/p>\n

62. Y. Ma, B. Feng, X. Zhang, T. Chen, W. Tang, L. Zhang, T. He, X. Zhou, X. Wei, H. Fu<\/strong>, K. Xu, S. Ding, and B. Zhang, \u201cHigh-performance \u03b2-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition<\/a>,\u201d Vacuum<\/em><\/strong> 191, 110402 (2021).<\/p>\n

61. K. Fu, H. Fu<\/strong>, X. Deng, P. Y. Su, H. Liu, K. Hatch, C. Y. Cheng, D. Messina, R. V. Meidanshahi, P. Peri, C. Yang, T. H. Yang, J. Montes, J. Zhou, X. Qi, S. M. Goodnick, F. A. Ponce, D. J. Smith, R. Nemanich, and Y. Zhao, \u201cThe impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 118, 222104 (2021).<\/p>\n

60. C. Yang, H. Fu<\/strong>, K. Fu, T. H. Yang, J. Zhou, J. Montes, and Y. Zhao, \u201cLow-leakage kV-class GaN vertical p-n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension<\/a>,\u201d Semicond. Sci. Technol.<\/strong><\/em> 36, 075009 (2021).<\/p>\n

59. Y. Ma, X. Zhang, J. Li, X. Cao, T. He, L. Zhang, W. Tang, K. Xu, Y. Fan, Y. Cai, H. Fu<\/strong>, and B. Zhang, \u201cControlled lateral epitaxial growth in vertical \u03b2-Ga2O3 nanowires on sapphire by MOCVD<\/a>,\u201d J. Phys. D: Appl. Phys.<\/strong><\/em> 54, 305101 (2021).<\/p>\n

58. H. Chen, J. Zhou, D. Li, D. Chen, A. K. Vinod, H. Fu<\/strong>, X. Huang, T. H. Yang, J. A. Montes, K. Fu, C. Yang, C. Z. Ning, C. W. Wong, A. M. Armani, and Y. Zhao, \u201cSupercontinuum generation in high order waveguide mode with near-visible pumping using aluminum nitride waveguides<\/a>,\u201d ACS Photonics<\/strong><\/em> 8, 1344 (2021).<\/p>\n

57. Y. Ma, W. Tang, T. Chen, L. Zhang, T. He, X. Zhou, X. Wei, X. Deng, H. Fu<\/strong>, K. Xu, X. Zhang, and B. Zhang, \u201cEffects of off-axis substrate angles on \u03b2-Ga2O3 thin films and solar-blind ultraviolet photodetectors grown on sapphire on MOCVD<\/a>,\u201d Mater. Sci. Semicond. Process.<\/strong><\/em> 131, 105856 (2021).<\/p>\n

56. P. Peri, K. Fu, H. Fu<\/strong>, Y. Zhao, and D. Smith, \u201cCharacterization of as-grown and regrown GaN-on-GaN heterostructures for vertical p-n power devices<\/a>,\u201d J. Electron. Mater. <\/em><\/strong>50, 2637 (2021).<\/p>\n

55. T. H. Yang, J. Brown, K. Fu, J. Zhou, K. Hatch, C. Yang, J. Montes, X. Qi, H. Fu<\/strong>, R. J. Nemanich, and Y. Zhao, \u201cAlGaN\/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using ERC-MPCVD deposited hexagonal boron nitride as gate dielectric<\/a>,\u201d\u00a0Appl. Phys. Lett.<\/em><\/strong> 118, 072102 (2021)<\/p>\n

54. G. Seryogin, F. Alema, N. Valente, H. Fu<\/strong>, E. Steinbrunner, A. T. Neal, S. Mou, A. Fine, and A. Osinsky, \u201cMOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 117, 262101 (2020).<\/p>\n

Selected as \u201cEditor’s Pick\u201d\u00a0<\/span><\/strong><\/p>\n

53. K. Fu, X. Qi, H. Fu<\/strong>, P. Y. Su, H. Liu, T. H. Yang, C. Yang, J. Montes, J. Zhou, F. Ponce, and Y. Zhao, \u201cCharacterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices<\/a>,\u201d Semicond. Sci. Technol.<\/strong><\/em> 36, 014005 (2020).<\/p>\n

52. A. Caria, C. De Santi, F. Zamperetti, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, A. Neviani, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cGaN-based high-periodicity multiple quantum well solar cells: degradation under optical and electrical stress<\/a>,\u201d Microelectron. Reliab.<\/strong><\/em> 114, 113802 (2020).<\/p>\n

51. J. Montes, C. Kopas, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, H. Fu<\/strong>, and Y. Zhao, \u201cDeep level transient spectroscopy investigation of ultra-wide bandgap (-201) and (001) \u03b2-Ga2O3<\/a>,\u201d J. Appl. Phys.<\/strong><\/em> 128, 205701 (2020).<\/p>\n

50. P. Peri, K. Fu, H. Fu<\/strong>, Y. Zhao, and D. J. Smith, \u201cStructural breakdown in GaN-on-GaN high power p-n diodes devices stressed to failure<\/a>,\u201d J. Vac. Sci. Technol. A<\/em><\/strong> 38, 063402 (2020).
\nFeatured as \u201cEditor\u2019s Pick\u201d in JVSTA<\/span><\/strong>
\nSelected as \u201cScilight\u201d in AIP<\/span><\/strong><\/p>\n

49. P. Y. Su, H. Liu, C. Yang, K. Fu, H. Fu<\/strong>, Y. Zhao, and F. A. Ponce, \u201cLateral and vertical growth of Mg-doped GaN on trench-patterned GaN films<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 117, 102110 (2020).<\/p>\n

48. C. Yang, H. Fu<\/strong>, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, X. Qi, X. Deng, and Y. Zhao, \u201cNormally-off GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD<\/a>,\u201d IEEE Trans. Electron Devices<\/strong><\/em>, 67, 3972 (2020).<\/p>\n

47. T. H. Yang, H. Fu<\/strong>, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, X. Qi, X. Deng, and Y. Zhao, \u201cVertical GaN-on-GaN Schottky barrier diodes with multi-floating metal rings<\/a>,\u201d IEEE J. Electron Devices Soc.<\/strong><\/em> 8, 857 (2020).<\/p>\n

46. C. Yang, H. Fu<\/strong>, P. Y. Su, H. Liu, K. Fu, X. Huang, T. H. Yang, H. Chen, J. Zhou, X. Deng, J. Montes, X. Qi, F. A. Ponce, and Y. Zhao, \u201cDemonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 117, 052105 (2020).<\/p>\n

45. X. Huang, D. Li, P. Y. Su, H. Fu<\/strong>, H. Chen, C. Yang, J. Zhou, X. Qi, T. H. Yang, J. Montes, X. Deng, K. Fu, S. P. DenBaars, S. Nakamura, F. A. Ponce, C. Z. Ning, and Y. Zhao, \u201cAnomalous carrier dynamics and localization effects in nonpolar m-plane InGaN\/GaN quantum wells at high temperatures<\/a>,\u201d Nano Energy<\/em><\/strong> 76, 105013 (2020).<\/p>\n

44. B. Raghothamachar, Y. Liu, H. Peng, T. Ailihumaer, M. Dudley, F. S. Shahedipour-Sandvik, K. A. Jones, A. Armstrong, A. A. Allerman, J. Han, H. Fu<\/strong>, K. Fu, and Y. Zhao, \u201cX-ray topography characterization of gallium nitride substrates for power device development<\/a>,\u201d J. Crys. Growth<\/strong><\/em> 544, 125709 (2020).<\/p>\n

43. K. Song, H. Zhang, H. Fu<\/strong>, C. Yang, R. Singh, Y. Zhao, H. Sun, and S. Long, \u201cNormally-off AlN\/\u03b2-Ga\u2082O\u2083 field-effect transistors using polarization-induced doping,<\/a>\u201d J. Appl. D: Appl. Phys.<\/em><\/strong>\u00a053, 345107 (2020).<\/p>\n

42. H. Fu<\/strong>, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Montes, J. Zhou, S. M. Goodnick, F. A. Ponce, and Y. Zhao, \u201cHigh voltage vertical GaN p-n diodes with hydrogen-plasma based guard rings<\/a>,\u201d IEEE Electron Device Lett.<\/em><\/strong> 41, 127 (2020).<\/p>\n

Most popular articles in IEEE Electron Device Lett. in December 2019 and January 2020<\/strong><\/span><\/p>\n

41. K. Fu*, H. Fu*<\/strong>, X. Huang, T. H. Yang, C. Y. Cheng, P. R. Peri, H. Chen, J. Montes, C. Yang, J. Zhou, X. Deng X. Qi, D. J. Smith, S. M. Goodnick, and Y. Zhao, \u201cReverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes<\/a>,\u201d J. Electron Devices Soc.<\/em><\/strong> 8, 74 (2020). (*Equal contribution)<\/p>\n

40. \u00a0H. Chen, H. Fu<\/strong>, J. Zhou, X. Huang, T. H. Yang, K. Fu, C. Yang, J. A. Montes, and Y. Zhao, \u201cStudy of crystalline defect induced optical scattering loss inside photonic waveguides in UV\u2013visible spectral wavelengths using volume current method<\/a>,\u201d Opt. Express<\/strong><\/em> 27, 17262 (2019).<\/p>\n

39. S. R. Alugubelli, H. Fu<\/strong>, K. Fu, H. Liu, Y. Zhao, M. R. McCartney, and F. A. Ponce, \u201cDetermination of electronic band structure by electron holography of of etched-and-regrown interfaces in GaN p-i-n diodes<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 115, 201602 (2019).<\/p>\n

38. J. Zhou, H. Chen, H. Fu<\/strong>, K. Fu, X. Deng, X. Huang, T. H. Yang, J. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, \u201cDemonstration of low loss \u03b2-Ga\u2082O\u2083 optical waveguides in the UV-NIR spectra<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 115, 251108 (2019).<\/p>\n

37. K. Fu*, H. Fu*<\/strong>, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, \u201cDemonstration of 1.27 kV etch-then-regrow GaN vertical p-n junctions with low leakage for GaN power electronics<\/a>,\u201d IEEE Electron Device Lett.<\/em><\/strong> 40, 1728 (2019). (*Equal contribution)<\/p>\n

Most popular articles in IEEE Electron Device Lett. in November 2019<\/strong><\/span><\/p>\n

36. H. Fu<\/strong>, K. Fu, H. Liu, S. Alugubelli, X. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, \u201cImplantation- and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing<\/a>,\u201d Appl. Phys. Express<\/em><\/strong> 12, 051015 (2019).<\/p>\n

Selected as \u201cSpotlights 2019\u201d in Appl. Phys. Express<\/strong><\/span><\/p>\n

35. S. R. Alugubelli, H. Fu<\/strong>, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce \u201cDopant profiling in p-i-n GaN structures using secondary electrons<\/a>,\u201d J. Appl. Phys.<\/em><\/strong> 126, 015704 (2019).<\/p>\n

34. X. Huang, W. Li, H. Fu<\/strong>, D. Li, C. Zhang, H. Chen, Y. Fang, K. Fu, S. DenBaars, S. Nakamura, S. Goodnick, C. Z. Ning, S. Fan, and Y. Zhao,\u201cHigh temperature polarization-free III-nitride solar cells with self-cooling effects<\/a>,\u201d ACS Photonics<\/strong><\/em> 6, 2096 (2019).<\/p>\n

33. J. Montes, C. Yang, H. Fu<\/strong>, T. H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang, and Y. Zhao, \u201cDemonstration of mechanically exfoliated \u03b2-Ga2O3\/GaN p-n heterojunction<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 114, 162103 (2019).<\/p>\n

32. K. Fu, H. Fu<\/strong>, X. Huang, T. H. Yang, H. Chen, I. Baranowski, J. Montes, C. Yang, J. Zhou, and Y. Zhao, \u201cThreshold switching and memory behavior of epitaxial regrown GaN-on-GaN vertical p-n diodes with high temperature stability<\/a>,\u201d IEEE Electron Device Lett.<\/em><\/strong> 40, 375 (2019).<\/p>\n

Highlighted on the Journal Cover of IEEE Electron Device Lett.<\/strong><\/span>
\nFeatured by IEEE Spectrum<\/a>, Compound Semiconductor<\/a>, etc.<\/strong><\/span>
\nMost popular articles in IEEE Electron Device Lett. in March 2019<\/strong><\/span><\/p>\n

31. H. Liu, H. Fu<\/strong>, K. Fu, S. R. Alugubelli, P. Y. Su, Y. Zhao, and F. A. Ponce, \u201cNon-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 114, 082102 (2019).<\/p>\n

30. X. Huang, R. Fang, C. Yang, K. Fu, H. Fu<\/strong>, H. Chen, T. H. Yang, J. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. Zhang, and Y. Zhao, \u201cSteep-slope AlGaN\/GaN HEMT with oxide based threshold switching device<\/a>,\u201d Nanotechnology<\/strong><\/em> 30, 215201 (2019).<\/p>\n

29. J. Montes, T. H. Yang, H. Fu<\/strong>, H. Chen, X. Huang, K. Fu, I. Baranowski, and Y. Zhao, \u201cEffect of proton radiation on ultra-wide bandgap AlN Schottky barrier diodes<\/a>,\u201d IEEE Trans. Nucl. Sci.<\/em><\/strong> 66, 91 (2019).<\/p>\n

28. T. H. Yang, H. Fu<\/strong>, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, \u201cTemperature-dependent electrical properties of \u03b2-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates and their reverse current leakage mechanisms<\/a>,\u201d J. Semicond.<\/em><\/strong> 40, 012801 (2019).<\/p>\n

27. Y. Zhao, H. Fu<\/strong>, G. T. Wang, and S. Nakamura, \u201cToward ultimate efficiency: Progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes<\/a>,\u201d Adv. Opt. Photonics<\/em><\/strong> 10, 246 (2018).<\/p>\n

Highlighted by ASU News<\/strong><\/a><\/span><\/p>\n

26. H. Fu<\/strong>, X. Zhang, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, I. Baranowski, T. H. Yang, K. Xu, F. A. Ponce, B. Zhang, and Y. Zhao, \u201cNonpolar vertical GaN-on-GaN p-n power diodes grown on free-standing (10-10) m-plane GaN substrates by MOCVD<\/a>,\u201d Appl. Phys. Express<\/strong><\/em> 11, 111003 (2018).<\/p>\n

25. K. Fu, H. Fu<\/strong>, H. Liu, S. R. Alugubelli, T. H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce, and Y. Zhao, \u201cInvestigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 113, 233502 (2018).<\/p>\n

24. H. Fu<\/strong>, K. Fu, X. Huang, H. Chen, I. Baranowski, T. H. Yang, J. Montes, and Y. Zhao, \u201cHigh performance vertical GaN-on-GaN p-n diodes with hydrogen-plasma based edge termination<\/a>,\u201d IEEE Electron Device Lett.<\/em><\/strong> 39, 1018 (2018).<\/p>\n

23. H. Fu<\/strong>, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, \u201cA comparative study on the electrical properties of vertical (-201) and (010) \u03b2-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates<\/a>,\u201d IEEE Trans. Electron Devices<\/strong><\/em> 65, 3507 (2018).<\/p>\n

22. X. Huang, H. Chen, H. Fu<\/strong>, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Cunning, D. D. Koleske, and Y. Zhao, \u201cEnergy band engineering of InGaN\/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 113, 043501 (2018).<\/p>\n

21. Z. Lu, P. Tian, H. Fu<\/strong>, J. Montes, X. Huang, H. Chen, X. Zhang, X. Liu, R. Liu, L. Zheng, X. Zhou, E. Gu, and Y. Zhao, \u201cExperimental demonstration of non-line-of-sight visible light communication using a GaN-based micro-LED and modified IEEE 802.11ac<\/a>,\u201d AIP Adv.<\/em><\/strong> 8, 105017 (2018)<\/p>\n

20. H. Chen, H. Fu<\/strong>, X. Huang, J. Montes, I. Baranowski, T. H. Yang, and Y. Zhao, \u201cCharacterizations of the nonlinear optical properties for (010) and (-201) beta-phase gallium oxide<\/a>,\u201d Opt. Express<\/em><\/strong> 26, 3938 (2018).<\/p>\n

19. H. Fu<\/strong>, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, \u201cEffect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes<\/a>,\u201d IEEE Electron Device Lett.<\/em><\/strong> 38, 763 (2017).<\/p>\n

Featured by Silicon Valley Microelectronics, Semiconductor Today, etc.<\/a><\/strong><\/span>
\nMost popular articles in IEEE Electron Device Lett. in April, May, and June 2017<\/strong><\/span><\/p>\n

18. H. Fu<\/strong>, I. Baranowski, X. Huang, H. Chen, Z. Lu, J. Montes, X. Zhang and Y. Zhao, \u201cDemonstration of AlN Schottky barrier diodes with blocking voltage over 1kV<\/a>,\u201d IEEE Electron Device Lett.<\/strong><\/em> 38, 1286 (2017).<\/p>\n

Featured by Silicon Valley Microelectronics, Semiconductor Today, Semiconductor Society (India), University of Strathclyde, etc.<\/a><\/strong><\/span>
\nMost popular articles in IEEE Electron Device Lett. in August and September 2017<\/strong><\/span><\/p>\n

17. H. Fu<\/strong>, X. Huang, H. Chen, Z. Lu, and Y. Zhao, \u201cFabrication and characterization of ultra-wide bandgap AlN based Schottky diodes on sapphire by MOCVD<\/a>,\u201d IEEE J. Electron Devices Soc.<\/em><\/strong> 5, 518 (2017).<\/p>\n

Most popular articles in IEEE J. Electron Devices Soc. from October 2017 to January 2018<\/strong><\/span><\/p>\n

16. H. Fu<\/strong>, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, \u201cUltra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers<\/a>,\u201d Appl. Phys. Lett.<\/strong><\/em> 111, 152102 (2017).<\/p>\n

Featured by Silicon Valley Microelectronics, Semiconductor Today, etc.<\/a><\/strong><\/span><\/p>\n

15. H. Chen, H. Fu<\/strong>, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, \u201cLow loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications<\/a>,\u201d Opt. Express<\/em><\/strong> 25, 31758 (2017).<\/p>\n

14. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, I. Baranowski, J. Montes, T. H. Yang, B. P. Gunning, D. Koleske, and Y. Zhao, \u201cReliability analysis of InGaN\/GaN multi-quantum-well (MQW) solar cells under thermal stress<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 111, 233511 (2017).<\/p>\n

13. X. Huang, H. Fu<\/strong>, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, \u201cNonpolar and semipolar InGaN\/GaN multiple-quantum-well solar cells with improved carrier collection efficiency<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 110, 161105 (2017).<\/p>\n

Featured by Semiconductor Today<\/strong><\/a><\/span><\/p>\n

12. H. Chen, H. Fu<\/strong>, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, \u201cOptical cavity effects in InGaN core-shell light-emitting diodes with metallic coating<\/a>,\u201d IEEE Photonics J.<\/strong><\/em> 9, 8200808 (2017).<\/p>\n

11. H. Fu<\/strong>, H. Chen, X. Huang, Z. Lu, and Y. Zhao, \u201cTheoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN\/GaN quantum well<\/a>,\u201d J. Appl. Phys.<\/strong><\/em> 121, 014501 (2017).<\/p>\n

10. H. Chen, X. Huang, H. Fu<\/strong>, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao \u201cCharacterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations<\/a>,\u201d Appl. Phys. Lett.<\/em><\/strong> 110, 181110 (2017).<\/p>\n

9. Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu<\/strong>, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, \u201cActive tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK<\/a>,\u201d Opt. Express<\/strong><\/em> 25, 17971 (2017).<\/p>\n

8. H. Y. Huang, Y. Fan, Z. Lu, T. Luo, H. Fu<\/strong>, H. Song, Y. Zhao, and J. B. Christen, \u201cVariable self-powered light detection CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor<\/a>,\u201d Opt. Express<\/strong><\/em> 25, 24138 (2017).<\/p>\n

7. H. Fu<\/strong>, Z. Lu, X. Zhao, Y. H. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, \u201cStudy of low efficiency droop in semipolar (20-2-1) InGaN light-emitting diodes by time-resolved photoluminescence<\/a>,\u201d IEEE J. Display Technol.<\/em><\/strong> 12, 736 (2016).<\/p>\n

6. H. Fu<\/strong>, Z. Lu, X. Huang, H. Chen and Y. Zhao, \u201cCrystal orientation dependent Intersubband transition in semipolar AlGaN\/GaN single quantum well for optoelectronic applications<\/a>,\u201d J. Appl. Phys.<\/em><\/strong> 119, 174502 (2016).<\/p>\n

5. H. Fu<\/strong>, Z. Lu, and Y. Zhao, \u201cAnalysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect<\/a>,\u201d AIP Adv.<\/em><\/strong> 6, 065013 (2016).<\/p>\n

4. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, D. Ding, and Y. Zhao, \u201cAnalysis of loss mechanisms in InGaN solar cells using a semi-analytical model<\/a>,\u201d J. Appl. Phys<\/em><\/strong>. 119, 213101 (2016).<\/p>\n

3. H. Chen, H. Fu<\/strong>, Z. Lu, X. Huang, and Y. Zhao, \u201cOptical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating<\/a>,\u201d Opt. Express<\/strong><\/em> 24, A856 (2016).<\/p>\n

2. C. C. Pan, Q. Yan, H. Fu<\/strong>, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, \u201cHigh optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier<\/a>,\u201d Electron. Lett.<\/strong><\/em> 51, 1187 (2015).<\/p>\n

1. Z. Yu, C. Bu, Z. Zhou, Y. Liu, N. Huang, S. Bai, H. Fu<\/strong>, S. Guo, and X. Zhao, \u201cEffect of HAc treatment on an open-environment prepared organic redox couple based on hydroquinone\/benzoquinone and its application in dye-sensitized solar cells<\/a>,\u201d Electrochimica Acta<\/em><\/strong> 107, 695 (2013).<\/p>\n

\n

Conference Publications\/Presentations (Refereed)<\/span><\/h3>\n

134. J. Xie, X. Zhang, B. Da, D. H. Mudiyanselage, D. Wang, X. Wei, P. M. Ajayan, M. Khoury, and H. Fu<\/strong>, \u201cE-mode GaN HEMT with high on\/off ratio and low Dit enabled by BN gate dielectric,\u201d The 68th Electronic Materials Conference (EMC 2026)<\/strong><\/em>, June 2026, Ann Arbor, Michigan, Oral Presentation.<\/p>\n

133. X. Wei, B. Da, J. Xie, D. Wang, and H. Fu<\/strong>, \u201cCharacterization and optimization of lateral AlN Schottky barrier diode on AlN substrate,\u201d The 68th Electronic Materials Conference (EMC 2026)<\/strong><\/em>, June 2026, Ann Arbor, Michigan, Oral Presentation.<\/p>\n

132. H. Fu<\/strong>, \u201cAlN FETs and diodes on AlN substrates,\u201d The 61st Annual Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2026)<\/strong><\/em>, February 2026, Phoenix, Arizona, Oral Presentation. [INVITED TALK]<\/strong><\/span><\/p>\n

131. J. Xie, Z. He, A. E. Yekta, D. H. Mudiyanselage, D. Wang, B. Da, R. Nemanich, M. Khoury, and H. Fu<\/strong>, \u201cGaN high electron mobility transistors with novel dielectrics and etching for power electronics,\u201d SEMICON West 2025<\/em><\/strong>, October 2025, Phoenix, Arizona, Poster Presentation.<\/p>\n

130. H. Fu<\/strong>, \u201cUltrawide bandgap oxides and nitrides for next-generation power electronics,\u201d 2025 Lawrence Symposium on Epitaxy<\/strong><\/em>, October 2025, Tempe, Arizona, Oral Presentation. [INVITED TALK]<\/span><\/strong><\/p>\n

129. B. Da, D. H. Mudiyanselage, F. Alema, W. Brand, V. Soukhoveev, A. Osinsky, and H. Fu<\/strong>, \u201cHigh current density AlN quasi-vertical Schottky barrier diodes,\u201d The 2025 Lester Eastman Conference<\/em><\/strong>, August 2025, Gainesville, Florida, Oral Presentation.<\/p>\n

128. M. Meneghini, M. Nicoletto, F. Piva, N. Roccato, A. Caria, F. Rampazzo, C. De Santi, M. Buffolo, F. Rossi, G. Mura, A. Gasparotto, C. Becht, G. Kusch, Y. Ji, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, N. Trivellin, G. Meneghesso, E. Zanoni, R. Oliver, N. Grandjean, and U. T. Schwarz, \u201cDefects in InGaN QW structures: microscopic properties and modeling,\u201d SPIE OPTO 2025<\/strong><\/em>, San Francisco, California, Oral Presentation. Published in Proc. SPIE 13386, Light-Emitting Devices, Materials, and Applications XXIX, 133860A (2025).<\/p>\n

127. D. Wang, H. Fu<\/strong>, \u201c9.5 kV AlGaN\/GaN Schottky barrier diodes with hydrogen plasma guard array termination,\u201d The 83rd Device Research Conference (DRC 2025)<\/em><\/strong>, June 2025, Durham, North Carolina, Oral Presentation.<\/p>\n

126. D. H. Mudiyanselage, D. Wang, B. Da, Z. He, J. Xie, and H. Fu<\/strong>, \u201cElectrical characterization of BN\/AlN metal-insulator-semiconductor (MIS) diodes,\u201d The 67th Electronic Materials Conference (EMC 2025)<\/strong><\/em>, June 2025, Durham, North Carolina, Oral Presentation.<\/p>\n

125. J. Xie, D. H. Mudiyanselage, D. Wang, B. Da, Z. He, and H. Fu<\/strong>, \u201cHigh current lateral AlN Schottky barrier diodes with graded AlGaN contact layer on single-crystal AlN substrate,\u201d The 67th Electronic Materials Conference (EMC 2025)<\/strong><\/em>, June 2025, Durham, North Carolina, Oral Presentation.<\/p>\n

124. B. Da, D. H. Mudiyanselage, D. Wang, Z. He, J. Xie, and H. Fu<\/strong>, \u201cAlN trench metal-oxide-semiconductor transistor (MOSFET) on AlN substrates,\u201d The 67th Electronic Materials Conference (EMC 2025)<\/strong><\/em>, June 2025, Durham, North Carolina, Oral Presentation.<\/p>\n

123. Z. He, J. Xie, D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu<\/strong>, \u201cGaN E-mode MISHEMT with 2-step etching gate recess,\u201d The 67th Electronic Materials Conference (EMC 2025)<\/strong><\/em>, June 2025, Durham, North Carolina, Oral Presentation.<\/p>\n

122. D. H. Mudiyanselage, R. Mandia, D. Wang, J. Adivarahan, Z. He, K. Fu, Y. Zhao, M. R. McCartney, D. J. Smith, and H. Fu<\/strong>, \u201cAnisotropic NiOx\/\u03b2-Ga2O3 p-n heterojunctions on (-201), (001), and (010) \u03b2-Ga2O3 substrates,\u201d The 72nd Japan Society of Applied Physics Spring Meeting 2025<\/strong><\/em>, Noda, Japan, March 2025, Oral Presentation. [INVITED TALK]<\/strong><\/p>\n

121. D. H. Mudiyanselage, and H. Fu<\/strong>, \u201cUltrawide Bandgap Aluminum Nitride Power Electronics,\u201d Electronic Materials and Applications 2025 (EMA 2025)<\/strong><\/em>, Denver, Colorado, February 2025, Oral Presentation. [INVITED TALK]<\/span><\/strong><\/p>\n

120. B. Da, D. H. Mudiyanselage, and H. Fu<\/strong>, \u201c2kV AlN-on-AlN metal-semiconductor field-effect transistors (MESFETs),\u201d 12th International Workshop on Nitride Semiconductors (IWN 2024)<\/strong><\/em>, O’ahu, Hawai’I, November 2024, Oral Presentation. [LATE NEWS]<\/strong><\/span><\/p>\n

119. D. H. Mudiyanselage, H. Fu<\/strong>, \u201cAlN-on-AlN Schottky barrier diodes for high-voltage and high-temperature electronics,\u201d 12th International Workshop on Nitride Semiconductors (IWN 2024)<\/em><\/strong>, O’ahu, Hawai’i, November 2024, Oral Presentation.<\/p>\n

118.W. Brand, F. Alema, A. Osinsky, D. H. Mudiyanselage, B. Da, and H. Fu, \u201cNitrogen doping of Ga2O3 via MOCVD using nitric oxide precursor,\u201d The 7th U.S. Workshop on Gallium Oxide (GOX 2024)<\/em><\/strong>, August 2024, Columbus, Ohio, Oral Presentation.<\/p>\n

117. D. H. Mudiyanselage, D. Wang, B. Da, Z. He, and H. Fu, \u201cHigh-Temperature AlN Schottky Barrier Diodes on Single-Crystal AlN Substrates,\u201d The 66th Electronic Materials Conference (EMC 2024)<\/em><\/strong>, June 2024, College Park, Maryland, Oral Presentation.<\/p>\n

116. A. Winchester, D. H. Mudiyanselage, H. Fu, and S. Pookpanratana, \u201cCrystal orientation-dependent electronic properties of \u03b2-Ga2O3 surfaces,\u201d The 66th Electronic Materials Conference (EMC 2024)<\/em><\/strong>, June 2024, College Park, Maryland, Oral Presentation.<\/p>\n

115. B. Da, D. H. Mudiyanselage, and H. Fu<\/strong>, \u201c\u03b2-(AlxGa1\u2212x)2O3 Vertical SBD with a BN interlayer,\u201d The 66th Electronic Materials Conference (EMC 2024)<\/strong><\/em>, June 2024, College Park, Maryland, Oral Presentation.<\/p>\n

114. D. Wang, D. H. Mudiyanselage, B. Da, Z. He, and H. Fu<\/strong>, \u201cLateral p-GaN\/AlGaN\/GaN Hybrid Anode Diodes (HADs) with Hydrogen Plasma Triangular Guard Array (TGA) Termination,\u201d The 66th Electronic Materials Conference (EMC 2024)<\/strong><\/em>, June 2024, College Park, Maryland, Oral Presentation.<\/p>\n

113. M. Nicoletto, A. Caria, F. Rampazzo, C. De Santi, M. Buffolo, G. Mura, F. Rossi, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cInfluence of V-Pits on the electro-optical properties of high-periodicity InGaN MQWs\u201d SPIE OPTO 2024<\/strong><\/em>, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX, 128860C (2024).<\/p>\n

112. D. H. Mudiyanselage, D. Wang, B. Da, Z. He, and H. Fu<\/strong>, \u201cDeveloping high-voltage AlN Schottky barrier diodes on AlN substrates for power electronic device applications,\u201d 2024 MRS Spring Meeting<\/strong><\/em>, Seattle, Washington, April 2024, Oral Presentation.<\/p>\n

111. B. Da, D. H. Mudiyanselage, D. Wang, A. Biswas, P. Ajayan, Y. Zhao, and H. Fu<\/strong>, \u201cVertical \u03b2-(AlxGa1\u2212x)2O3 Schottky barrier diodes with a BN interlayer,\u201d 2024 MRS Spring Meeting<\/em><\/strong>, Seattle, Washington, April 2024, Oral Presentation.<\/p>\n

110. D. Wang, D. H. Mudiyanselage, Z. He, B. Da, and H. Fu<\/strong>, \u201cLateral p-GaN\/AlGaN\/GaN Hybrid Anode Diodes (HADs) with Hydrogen Plasma Guard Line Termination,\u201d 2024 MRS Spring Meeting<\/strong><\/em>, Seattle, Washington, April 2024, Oral Presentation.<\/p>\n

109. B. Da, D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu<\/strong>, \u201cInvestigation of temperature-dependent hysteresis and interface trap density in E-beam evaporated NiOx\/\u03b2-Ga2O3 p-n diodes,\u201d 2024 MRS Spring Meeting<\/strong><\/em>, Seattle, Washington, April 2024, Oral Presentation.<\/p>\n

108. Z. He, D. Wang, D. H. Mudiyanselage, B. Da, Y. Zhao, and H. Fu<\/strong>, \u201cMicrowave-plasma-assisted chemical vapor deposition of BN as gate dielectric for AlGaN\/GaN metal-insulator-semiconductor high electron mobility transistors,\u201d 2024 MRS Spring Meeting<\/strong><\/em>, Seattle, Washington, April 2024, Poster Presentation.<\/p>\n

107. S. Ghosh, D. H. Mudiyanselage, F. Kargar, Y. Zhao, H. Fu<\/strong>, S. Goodnick, R. Nemanich, and A. Balandin, \u201cComparative study of low-frequency noise in diodes made of ultra-wide band semiconductors,\u201d 2024 MRS Spring Meeting<\/strong><\/em>, Seattle, Washington, April 2024, Oral Presentation.<\/p>\n

106. D. H. Mudiyanselage, D. Wang, Z. He, B. Da, and H. Fu<\/strong>, \u201cDemonstration of 3 kV Schottky barrier diodes on AlN epilayers grown on bulk AlN substrates by MOCVD,\u201d 2023 MRS Fall Meeting<\/strong><\/em>, Boston, Massachusetts, November 2023, Oral Presentation. [LATE NEWS]<\/strong><\/span><\/p>\n

105. C. Leblanc, D. H. Mudiyanselage, S. Song, H. Zhang, A. Davydov, H. Fu<\/strong>, and D. Jariwala, \u201cVertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D \u03b2-Ga2O3,\u201d 2023 MRS Fall Meeting<\/em><\/strong>, Boston, Massachusetts, November 2023, Oral Presentation.<\/p>\n

104. H. Fu, \u201cUltrawide bandgap semiconductors for future power electronics,\u201d The 8th International Symposium on Biomedical Engineering and International Workshop on Nanodevice Technologies 2023 (ISBE 2023\/IWNT 2023)<\/em><\/strong>, November 2023, Hiroshima University, Japan, Oral Presentation. [INVITED TALK]<\/span><\/strong><\/p>\n

103. D. Smith, P. Peri, S. Vishwakarma, A. Patel, H. Fu<\/strong>, K. Fu, Y. Zhao, and R. Nemanich, \u201cGrowth, defects and breakdown in ultrawide-bandgap semiconductors for power electronic devices,\u201d The 20th International Microscopy Congress (IMC20)<\/em><\/strong>, September 2023, Busan, Korea, Oral Presentation. [INVITED TALK]<\/span><\/strong><\/p>\n

102. D. Wang, D. H. Mudiyanselage, and H. Fu<\/strong>, \u201cModeling of \u03b2-(AlxGa1-x)2O3\/Ga2O3 high electron mobility transistor (HEMT) and current aperture vertical electron transistor (CAVET),\u201d The 6th U.S. Workshop on Gallium Oxide (GOX 2023)<\/em><\/strong>, August 2023, Buffalo, New York, Poster Presentation.<\/p>\n

101. D. H. Mudiyanselage, D. Wang, and H. Fu<\/strong>, \u201cAnisotropy nature of NiOx\/\u03b2-Ga2O3 p-n heterojunctions on (-201), (001), and (010) \u03b2-Ga2O3 substrates,\u201d The 6th U.S. Workshop on Gallium Oxide (GOX 2023)<\/strong><\/em>, August 2023, Buffalo, New York, Poster Presentation<\/p>\n

100. D. Wang, D. H. Mudiyanselage, Z. He, and H. Fu<\/strong>, \u201cReliability study and analysis of vertical GaN power devices,\u201d The 65th Electronic Materials Conference (EMC 2023)<\/em><\/strong>, June 2023, Santa Barbara, California, Oral Presentation. [LATE NEWS]<\/strong><\/span><\/p>\n

99. Z. He, D. H. Mudiyanselage, D. Wang, Y. Zhao, and H. Fu<\/strong>, \u201cEffect of impact ionization coefficients on high-voltage vertical AlN power devices,\u201d The 65th Electronic Materials Conference (EMC 2023)<\/em><\/strong>, June 2023, Santa Barbara, California, Oral Presentation.<\/p>\n

98. D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu<\/strong>, \u201cAnisotropic Electronic Properties of NiOx\/\u03b2-Ga2O3 p-n Heterojunctions on (-201), (001), and (010) \u03b2-Ga2O3 Substrates,\u201d The 65th Electronic Materials Conference (EMC 2023)<\/em><\/strong>, June 2023, Santa Barbara, California, Oral Presentation.<\/p>\n

97. D. Wang, D. H. Mudiyanselage, Z. He, and H. Fu<\/strong>, \u201cDesign and fabrication of AlGaN\/GaN multiple p-channel Schottky barrier diodes,\u201d The 65th Electronic Materials Conference (EMC 2023)<\/strong><\/em>, June 2023, Santa Barbara, California, Oral Presentation.<\/p>\n

96. A. Caria, C. De Santi, M. Nicoletto, M. Buffolo, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cExperimental analysis of degradation of multi-quantum well GaN based solar cells under current stress,\u201d SPIE OPTO 2023<\/strong><\/em>, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210D (2023).<\/p>\n

95. M. Nicoletto, A. Caria, C. De Santi, M. Buffolo, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cDegradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion,\u201d SPIE OPTO 2023<\/strong><\/em>, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 1242106 (2023).<\/p>\n

94. D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu<\/strong>, \u201cComparative study of NiOx\/\u03b2-Ga2O3 p-n heterojunctions on (-201) and (001) free-standing \u03b2-Ga2O3 substrates,\u201d 2023 MRS Spring Meeting<\/strong><\/em>, San Francisco, April 2023, Poster Presentation.<\/p>\n

93. D. Wang, D. H. Mudiyanselage, and H. Fu<\/strong>, \u201cDesign and fabrication of AlGaN\/GaN multiple p-channel Schottky barrier diodes,\u201d 2023 MRS Spring Meeting<\/strong><\/em>, San Francisco, April 2023, Oral Presentation.<\/p>\n

92. Z. He, K. Fu, M. Xu. J. Zhou, T. Li, Y. Zhao, and H. Fu<\/strong>, \u201cUltrawide bandgap BN based vertical power diodes via TCAD simulation,\u201d 2023 MRS Spring Meeting<\/em><\/strong>, San Francisco, April 2023, Poster Presentation.<\/p>\n

91. D. Wang, D. H. Mudiyanselage, and H. Fu<\/strong>, \u201cComprehensive design and simulation of E-mode \u03b2-Ga2O3 current-aperture vertical electron transistors,\u201d 2022 MRS Spring Meeting<\/strong><\/em>, Honolulu, Hawai\u2019i, May 2022, Oral Presentation.<\/p>\n

90. D. H. Mudiyanselage, D. Wang, and H. Fu<\/strong>, \u201cUltrawide bandgap \u03b2-Ga2O3\/p-GaN heterojunction barrier Schottky rectifiers for efficient power electronic applications,\u201d 2022 MRS Spring Meeting<\/strong><\/em>, Honolulu, Hawai\u2019i, May 2022, Oral Presentation.<\/p>\n

89. D. H. Mudiyanselage, D. Wang, and H. Fu<\/strong>, \u201cUltrawide Bandgap Vertical \u03b2-(AlxGa1-x)2O3 Schottky Barrier Diodes on Free-Standing Ga2O3 Substrates,\u201d 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022)<\/strong><\/em>, June 2022, Anna Arbor, Michigan, Oral Presentation. [LATE NEWS]<\/strong><\/span><\/p>\n

88. K. Fu, T. H. Yang, J. Brown, J. Zhou, K. Hatch, C. Yang, J. Montes, X. Qi, H. Fu<\/strong>, R. J. Nemanich, and Y. Zhao, \u201cAlGaN\/GaN MISHEMTs with BN as gate dielectric deposited by ECR-MPCVD,\u201d 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022)<\/strong><\/em>, June 2022, Anna Arbor, Michigan, Poster Presentation.<\/p>\n

87. D. Wang, D. H. Mudiyanselage, and H. Fu<\/strong>, \u201cHigh-voltage kilovolt enhancement-mode \u03b2-Ga2O3 current-aperture vertical electron transistors with recessed-gate design,\u201d 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022)<\/strong><\/em>, June 2022, Anna Arbor, Michigan, Poster Presentation.<\/p>\n

86. D. H. Mudiyanselage, D. Wang, and H. Fu<\/strong>, \u201cDesign and analysis of kV-class ultrawide bandgap \u03b2-Ga2O3\/p-GaN heterojunction barrier Schottky diodes,\u201d 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022)<\/strong><\/em>, June 2022, Anna Arbor, Michigan, Poster Presentation.<\/p>\n

85.\u00a0A. Caria, C. De Santi, M. Nicoletto, M. Buffolo, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cGaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress,\u201d SPIE OPTO 2022<\/strong><\/em>, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 12001, Gallium Nitride Materials and Devices XVII, 1200107 (2022).<\/p>\n

84. H. Fu<\/strong>, \u201cRecent progress on anisotropic electrical and optical studies in ultrawide bandgap \u03b2-Ga2O3 electronics and photonics,\u201d 240th ECS Meeting<\/strong><\/em>, October 2021, Orlando, Florida, Oral Presentation. [Invited talk]<\/strong><\/span><\/p>\n

83. P. R. Peri, K. Fu, H. Fu<\/strong>, Y. Zhao, and D. J. Smith, \u201cEffect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes,\u201d Microscopy and Microanalysis<\/strong><\/em> 27, Supplement S1, 1760 (2021). DOI: 10.1017\/S1431927621006449<\/p>\n

82. D. H. Mudiyanselage and H. Fu<\/strong>, \u201cWide bandgap beta-Ga2O3\/GaN heterojunction based vertical p-n diode with mesa edge termination,\u201d 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021)<\/strong><\/em>, May 2021, Stockholm, Sweden, Oral Presentation.<\/p>\n

81. D. Wang and H. Fu<\/strong>, \u201cModulation-doped beta-(AlxGa1-x)2O3\/Ga2O3 HEMTs: Design principles and performance optimization via TCAD,\u201d 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021)<\/em><\/strong>, May 2021, Stockholm, Sweden, Poster Presentation.<\/p>\n

80. C. Yang, H. Fu<\/strong>, K. Fu, T. H. Yang, J. Zhou, J. Montes, and Y. Zhao, \u201cGate-recess-free GaN-based p-channel HFETs with ultra-low off-state leakage and subthreshold swing towards GaN CMOS technology,\u201d 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021)<\/strong><\/em>, May 2021, Stockholm, Sweden, Oral Presentation.<\/p>\n

79. K. Fu, C. Yang, J. Zhou, T. H. Yang, J. Montes, H. Fu<\/strong>, and Y. Zhao, \u201cGaN vertical p-n diodes with avalanche capability through hydrogen plasma based edge termination,\u201d 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021)<\/strong><\/em>, May 2021, Stockholm, Sweden, Oral Presentation.<\/p>\n

78. J. Montes, C. Kopas, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, H. Fu<\/strong>, and Y. Zhao, \u201cDeep level transient spectroscopy investigation of ultra-wide bandgap (-201) and (001) \u03b2-Ga2O3,\u201d 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021)<\/em><\/strong>, May 2021, Stockholm, Sweden, Oral Presentation.<\/p>\n

77. J. Zhou, H. Chen, X. Qi, C. Yang, J. A. Montes, K. Fu, T. H. Yang, H. Fu<\/strong>, X. Deng, X. Huang, and Y. Zhao, \u201cCharacterizations of two-photon absorption and Kerr nonlinear optical properties for aluminum nitride using Z-scan method,\u201d 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021)<\/em><\/strong>, May 2021, Stockholm, Sweden, Poster Presentation.<\/p>\n

76. D. H. Mudiyanselage and H. Fu<\/strong>, \u201cVertical Wide Bandgap \u03b2-Ga2O3\/GaN p-n Heterojunction with Mesa Based Edge Termination,\u201d The 63rd Electronic Materials Conference (EMC 2021)<\/em><\/strong>, June 2021, Oral Presentation.<\/p>\n

75. D. Wang and H. Fu<\/strong>, \u201cModulation-doped \u03b2-(AlxGa1-x)2O3\/Ga2O3 HEMTs: Design Principles and Performance Optimization via TCAD,\u201d The 63rd Electronic Materials Conference (EMC 2021)<\/em><\/strong>, June 2021, Oral Presentation.<\/p>\n

74. D. H. Mudiyanselage and H. Fu<\/strong>, Mesa edge terminated wide bandgap \u00df-Ga2O3\/GaN heterojunction based vertical p-n diode,” 2021 MRS Spring Meeting<\/em><\/strong>, <\/em>April 2021, Poster Presentation. [LATE NEWS]<\/span><\/strong><\/p>\n

73. D. Wang and H. Fu<\/strong>, “Design and Optimization of \u03b2-(AlxGa1-x)2O3\/Ga2O3 Delta-Doped High Electron Mobility Transistors,” 2021 MRS Spring Meeting<\/em><\/strong>, <\/em>April 2021, Poster Presentation.<\/p>\n

72. A. Caria, C. De Santi, F. Zamperetti, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, M.Meneghini, \u201cGaN-based high-periodicity multiple quantum well solar cells: degradation under optical and electrical stress,\u201d The 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2020)<\/em><\/strong>, Oct 2020, Athens, Greece, Oral Presentation.<\/p>\n

71. H. Fu<\/strong>, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, \u201cNovel hydrogen-plasma based guard rings for high-voltage vertical GaN-on-GaN p-n diodes,\u201d The 62nd Electronic Materials Conference (EMC 2020)<\/em><\/strong>, June 2020, Columbus, OH, Oral Presentation.<\/p>\n

70. J. Montes, H. Fu<\/strong>, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, \u201cExamining deep-level defects in (-201) \u03b2-Ga2O3 by deep level transient spectroscopy,\u201d The 62nd Electronic Materials Conference (EMC 2020)<\/em><\/strong>, June 2020, Columbus, OH, Oral Presentation.<\/p>\n

69. K. Fu, H. Fu<\/strong>, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, \u201c1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics,\u201d The 62nd Electronic Materials Conference (EMC 2020)<\/strong><\/em>, June 2020, Columbus, OH, Oral Presentation.<\/p>\n

68. T. H. Yang, H. Fu<\/strong>, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, and Y. Zhao, \u201cThe investigation of vertical GaN Schottky barrier diode with floating metal guard rings,\u201d The 62nd Electronic Materials Conference (EMC 2020)<\/strong><\/em>, June 2020, Columbus, OH, Oral Presentation.<\/p>\n

67. X. Huang, D. Li, P. Su, H. Fu<\/strong>, H. Chen, K. Fu, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, \u201cCarrier localization and dynamics of nonpolar m-plane InGaN\/GaN MQWs at elevated temperatures,\u201d The 62nd Electronic Materials Conference (EMC 2020)<\/strong><\/em>, June 2020, Columbus, OH, Oral Presentation.<\/p>\n

66. H. Fu<\/strong>, K. Fu, C. Yang, H. Liu, K. A. Hatch, S. R. Alugubelli, P. Y. Su, D. C. Messina, X. Deng, B. Li, P. R. Peri, C. Y. Cheng, X. Huang, H. Chen, D. J. Smith, S. M. Goodnick, E. T. Yu, J. Han, R. J. Nemanich, F. A. Ponce, and Y. Zhao, \u201cRecent progress on selective area regrowth and doping for vertical GaN power transistors,\u201d 2020 Compound Semiconductor Week (CSW 2020) and the 47th International Symposium on Compound Semiconductors (ISCS 2020)<\/strong><\/em>, May 2020, Stockholm, Sweden, Oral Presentation (CANCELED due to COVID-19).<\/p>\n

65. J. Zhou, H. Chen, H. Fu<\/strong>, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, \u201cDemonstration of low loss \u03b2-Ga2O3 optical waveguides in the UV-NIR spectra,\u201d 2020 Conference on Lasers and Electro-Optics (2020 CLEO)<\/em><\/strong>, May 2020, San Jose, CA, Poster Presentation.<\/p>\n

64. H. Fu<\/strong>, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, \u201cKV-class GaN power p-n diodes with plasma-based guard rings,\u201d 2020 MRS Spring Meeting<\/em><\/strong>, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).<\/p>\n

63. C. Yang, H. Fu<\/strong>, V. N. Kumar, K. Fu, H. Liu, X. Huang, J. Montes, T. H. Yang, H. Chen, J. Zhou, X. Deng, F. A. Ponce, D. Vasileska, and Y. Zhao, \u201cNormally-off GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD,\u201d 2020 MRS Spring Meeting<\/em><\/strong>, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).<\/p>\n

62. J. Montes, H. Fu<\/strong>, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, \u201cExamining deep-level defects in (-201) \u03b2-Ga2O3 by deep level transient spectroscopy,\u201d 2020 MRS Spring Meeting<\/em><\/strong>, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).<\/p>\n

61. J. Zhou, H. Chen, H. Fu<\/strong>, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, \u201cDemonstration of low loss \u03b2-Ga2O3 optical waveguides in the UV\u2013visible spectra,\u201d 2020 MRS Spring Meeting<\/em><\/strong>, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).<\/p>\n

60. K. Fu, H. Fu<\/strong>, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, \u201cEtch-then-regrow vertical GaN p-n diodes with high breakdown voltage and low leakage current,\u201d 2020 MRS Spring Meeting<\/em><\/strong>, Apr 2020, Phoenix, AZ, Poster Presentation (CANCELED due to COVID-19).<\/p>\n

59. X. Huang, D. Li, H. Fu<\/strong>, P. Su, H. Chen, K. Fu, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, \u201cHigh temperatures carrier dynamics of nonpolar InGaN\/GaN MQWs,\u201d 2020 MRS Spring Meeting<\/em><\/strong>, Apr. 2020, Phoenix, AZ, Poster Presentation (CANCELED due to COVID-19).<\/p>\n

58. H. Fu<\/strong>, K. Fu, and Y. Zhao, \u201cSelective area regrowth and doping for vertical GaN power transistors: challenges and progress,\u201d 2020 Lawrence Symposium on Epitaxy<\/strong><\/em>, Feb. 2020, Scottsdale, AZ, Oral Presentation. [Invited talk]<\/span><\/strong><\/p>\n

57. A. Caria, C. D. Santi, F. Zamperetti, X. Huang, H. Fu<\/strong>, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, \u201cDegradation and recovery of high-periodicity InGaN\/GaN MQWs under optical stress in short-circuit condition<\/a>,\u201d SPIE. Photonics West, OPTO 2020<\/em><\/strong>, Feb. 2020, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800E (2020).<\/p>\n

56. X. Huang, H. Fu<\/strong>, and Y. Zhao, \u201cHigh performance nonplar m-plane InGan multiple-quantum-well solar cells with improved carrier collection and high temperature spectral response,\u201d 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterPACK 2019)<\/em><\/strong>, Oct. 2019, Anaheim, CA, Oral Presentation.<\/p>\n

55. P. Peri, K. Fu, H. Fu<\/strong>, Y. Zhao, and D. J. Smith, \u201cCharacterization of etched and regrown GaN-on-GaN Schottky diodes,\u201d Microscopy & Microanalysis 2019 Meeting<\/em><\/strong>, Aug. 2019, Portland, OR, Poster Presentation.<\/p>\n

54. H. Fu<\/strong>, K. Fu, H. Liu, S. Reddy, F. Ponce, and Y. Zhao, \u201cEffective selective area doping for GaN vertical power transistors enabled by epitaxial regrowth,\u201d 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19)<\/strong><\/em>, Jul. 2019, Keystone, CO, Oral Presentation.<\/p>\n

53. K. A. Hatch, D. Messina, H. Fu, K. Fu, X. Wang, M. Hao, Y. Zhao, and R. J. Nemanich, \u201cALE of GaN (0001) for removal of etch-induced damage,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Poster Presentation.<\/p>\n

52. H. Fu<\/strong>, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, \u201cHigh voltage implantation-free vertical GaN power p-n diodes with a novel low-temperature plasma-based planar edge termination,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

51. H. Chen, H. Fu<\/strong>, X. Huang, J. Zhou, T. H. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, \u201cSupercontinuum generation from dispersion engineered AlN waveguide arrays,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

50. K. Fu, H. Fu<\/strong>, X. Huang, T. H. Yang, H. Chen, J. Montes, C. Yang, J. Zhou, and Y. Zhao. \u201cThreshold switching and memory behaviors of GaN-on-GaN regrown vertical p-n diodes with high temperature stability,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/strong><\/em>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

49. C. Yang, J. Montes, H. Fu<\/strong>, T. H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang, and Y. Zhao, \u201cDemonstration of mechanically exfoliated \u03b2-Ga2O3\/GaN p-n heterojunction,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/strong><\/em>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

48. H. Chen, J. Zhou, T. H. Yang, H. Fu<\/strong>, J. Montes, X. Huang, K. Fu, J. Montes, C. Yang, and Y. Zhao, \u201cStudy of optical scattering loss induced by crystalline defects inside AlN waveguides using volume current method,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

47. X. Huang, D. Li, H. Fu<\/strong>, H. Chen, K. Fu, C. Yang, T. H. Yang, J. Zhou, J. Montes, S. P. DenBaars, S. Nakamura, C. Z. Ning, and Y. Zhao, \u201cHigh temperatures carrier dynamics of nonpolar and polar InGaN\/GaN MQWs,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

46. J. Montes, H. Fu<\/strong>, T. H. Yang, H. Chen, X. Huang, K. Fu, I. Baranowski, and Y. Zhao, \u201cEffects of 3 MeV proton radiation on ultrawide bandgap aluminum nitride Schottky barrier diodes,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/strong><\/em>, Jul. 2019, Bellevue, WA, Poster Presentation.<\/p>\n

45. X. Huang, R. Fang, C. Yang, K. Fu, H. Fu, H. Chen, T. H. Yang, J. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. Zhang, and Y. Zhao, \u201cSteep-slope field-effect transistors with AlGaN\/GaN HEMT and oxide based threshold switching device,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Poster Presentation.<\/p>\n

44. H. Liu, S. R. Alugubelli, P. Y. Su, H. Fu<\/strong>, K. Fu, Y. Zhao, and F. A. Ponce, \u201cNonuniform Mg doping in GaN epilayers grown on mesa structures,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

43. S. R. Alugubelli, H. Fu<\/strong>, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, \u201cDopant profiling in p-i-n GaN high power devices using secondary electrons,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/em><\/strong>, Jul. 2019, Bellevue, WA, Oral Presentation.<\/p>\n

42. S. R. Alugubelli, H. Fu<\/strong>, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, \u201cElectronic band structure of etch-and-regrowth interface in p-i-n GaN films using electron holography,\u201d The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)<\/strong><\/em>, Jul. 2019, Bellevue, WA, Poster Presentation.<\/p>\n

41. H. Chen, J. Zhou, H. Fu<\/strong>, X. Huang, T. H. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, \u201cSupercontinuum generation from dispersion engineered AlN nanophotonics waveguide arrays<\/a>,\u201d 2019 Conference on Lasers and Electro-Optics (2019 CLEO)<\/strong><\/em>, May 2019, San Jose, CA, Oral Presentation. DOI: 10.1364\/CLEO_SI.2019.SW4H.5<\/p>\n

40. H. Chen, J. Zhou, H. Fu<\/strong>, X. Huang, and Y. Zhao, \u201cStudy of Crystalline defect induced optical scattering loss inside AlN waveguides in UV-Visible spectral wavelengths<\/a>,\u201d 2019 Conference on Lasers and Electro-Optics (2019 CLEO)<\/em><\/strong>, May 2019, San Jose, CA, Poster Presentation. DOI: 10.1364\/CLEO_AT.2019.JTh2A.66<\/p>\n

39. K. Fu, H. Fu<\/strong>, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhaou, F. A. Ponce, and Y. Zhao, \u201c1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering<\/a>,\u201d 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019)<\/em><\/strong>, May 2019, Nara, Japan, Oral Presentation (Late News). DOI: 10.1109\/ICIPRM.2019.8819081<\/p>\n

38. K. Fu, H. Fu<\/strong>, X. Huang, T. H. Yang, H. Chen, J. Montes, C. Yang, J. Zhou, and Y. Zhao, \u201cThreshold and resistive switching behaviors in epitaxially regrown GaN P-N diodes for high temperature applications<\/a>,\u201d 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019)<\/em><\/strong>, May 2019, Nara, Japan, Poster Presentation. DOI: 10.1109\/ICIPRM.2019.8819097<\/p>\n

37. H. Fu<\/strong>, K. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, \u201cObservation of threshold and resistive switching behaviors in epitaxially regrown GaN p-n diodes by MOCVD,\u201d 2019 MRS Spring Meeting<\/em><\/strong>, Apr. 2019, Phoenix, AZ, Poster Presentation (Late News).<\/p>\n

36. K. Fu, H. Fu<\/strong>, H. Liu, S. R. Alugubelli, T. H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce, and Y. Zhao, \u201cInvestigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition,\u201d 2019 MRS Spring Meeting<\/em><\/strong>, Apr. 2019, Phoenix, AZ, Oral Presentation.<\/p>\n

35. T. H. Yang, H. Fu<\/strong>, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, \u201cThe study on inhomogeneity of Ga2O3 Schottky barrier diodes by modified thermionic emission model,\u201d 2019 MRS Spring Meeting<\/em><\/strong>, Apr. 2019, Phoenix, AZ, Oral Presentation.<\/p>\n

34. H. Liu, H. Fu<\/strong>, K. Fu, S. R. Alugubelli, P.-Y. Su, Y. Zhao, and F. A. Ponce, \u201cNon-uniform Mg doping in GaN epilayers on mesa structures,\u201d 2019 MRS Spring Meeting<\/em><\/strong>, Apr. 2019, Phoenix, AZ, Poster Presentation.<\/p>\n

33. S. R. Alugubelli, H. Fu<\/strong><\/em>, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, \u201cDopant profiling using low-voltage SEM for GaN power electronics,\u201d 2019 MRS Spring Meeting<\/em><\/strong>, Apr. 2019, Phoenix, AZ, Poster Presentation.<\/p>\n

32. K. A. Hatch, K. Fu, H. Fu<\/strong>, J. Brown, D. C. Messina, X. Wang, M. Hao, Y. Zhao, and R. J. Nemanich, \u201cAtomic layer etching for selective area doping of GaN,\u201d 2018 MRS Fall Meeting<\/em><\/strong>, Nov. 2018, Boston, MA, Poster Presentation.<\/p>\n

31. Y. Zhao, J. Montes, H. Fu<\/strong>, K. Fu, X. Huang, H. Chen, T. H. Yang, and I. Baranowski, \u201cProgress on radiation effects in ultra-wide bandgap AlN Schottky barrier diodes<\/a>,\u201d 2018 IEEE Nuclear and Space Radiation Effects Conference (IEEE NSREC 2018)<\/strong><\/em>, Jul. 2018, Kona, HI, Poster Presentation (Late News).<\/p>\n

30. H. Fu<\/strong>, X. Huang, H. Chen, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, \u201c1-kV-class AlN Schottky barrier diodes on sapphire substrates,\u201d 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018)<\/strong><\/em>, May 2018, Boston, MA, Oral Presentation.<\/p>\n

29. T. H. Yang, H. Fu<\/strong>, X. Huang, H. Chen, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, \u201cTemperature-dependent electrical properties of beta-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates and their reverse current leakage mechanisms,\u201d 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018)<\/strong><\/em>, May 2018, Boston, MA, Poster Presentation.<\/p>\n

28. J. Montes, H. Fu<\/strong>, T. H. Yang, H. Chen, X. Huang, I. Baranowski, K.Fu, and Y. Zhao, \u201cGamma-ray and proton radiation effects in AlN Schottky barrier diodes,\u201d 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018)<\/em><\/strong>, May 2018, Boston, MA, Poster Presentation.<\/p>\n

27. X. Huang, H. Fu<\/strong>, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, \u201cBand engineering of InGaN\/GaN multiple-quantum-well (MQW) solar cells,\u201d 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018)<\/em><\/strong>, May 2018, Boston, MA, Oral Presentation.<\/p>\n

26. H. Fu<\/strong>, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, \u201cAnisotropic electrical properties of vertical \u03b2-Ga2O3 Schottky barrier diodes on single-crystal substrates,\u201d 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018)<\/em><\/strong>, May 2018, Boston, MA, Oral Presentation.<\/p>\n

25. X. Huang, H. Fu<\/strong>, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, \u201cThermal reliability analysis of InGaN MQW solar cells,\u201d 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018)<\/em><\/strong>, May 2018, Boston, MA, Oral Presentation.<\/p>\n

24. I. Baranowski, H. Chen, H. Fu<\/strong>, J. Montes, K. Fu, T. H. Yang, X. Huang, and Y. Zhao, \u201cThermal performance of silicon dioxide conduction blocking layers in GaN VHEMT devices,\u201d 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018)<\/em><\/strong>, May 2018, Boston, MA, Poster Presentation.<\/p>\n

23. H. Fu<\/strong>, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, \u201cEffect of crystalline anisotropy on (-201) and (010) \u03b2-Ga2O3 Schottky barrier diodes fabricated on single-crystal substrates,\u201d 2018 MRS Spring Meeting<\/strong><\/em>, Apr. 2018, Phoenix, AZ, Oral Presentation.<\/p>\n

22. H. Chen, H. Fu<\/strong>, X. Huang, and Y. Zhao, \u201cLoss mechanism study and fabrication of III-N photonic waveguide for integrated photonics applications at visible spectral wavelength,\u201d 2018 MRS Spring Meeting<\/em><\/strong>, Apr. 2018, Phoenix, AZ, Oral Presentation.<\/p>\n

21. X. Huang, H. Fu<\/strong>, H. Chen, I. Baranowski, J. Montes, T. H. Yang, B. P. Gunning, D. Koleske, and Y. Zhao, \u201cThermal reliability analysis of InGaN solar cells,\u201d 2018 MRS Spring Meeting<\/strong><\/em>, Apr. 2018, Phoenix, AZ, Oral Presentation.<\/p>\n

20. J. Montes, H. Fu<\/strong>, H. Chen, X. Huang, T. H. Yang, I. Baranowski, and Y. Zhao, \u201cRadiation effects in ultra-wide bandgap AlN Schottky barrier diodes,\u201d 2018 MRS Spring Meeting<\/em><\/strong>, Apr. 2018, Phoenix, AZ, Oral Presentation.<\/p>\n

19. I. Baranowski, H. Fu<\/strong>, H. Chen, X. Huang, T. H. Yang, J. Montes, and Y. Zhao, \u201cThermal TCAD simulations of silicon dioxide conduction blocking layers in GaN vertical high electron mobility transistors,\u201d 2018 MRS Spring Meeting<\/em><\/strong>, Apr. 2018, Phoenix, AZ, Poster Presentation.<\/p>\n

18. Y. Zhao, X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, J. Montes, and I. Baranowski, \u201cInGaN-based solar cells for space applications<\/a>,\u201d 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS)<\/em><\/strong>, Aug. 2017, Boston, MA, Oral Presentation. DOI: 10.1109\/MWSCAS.2017.8053083<\/p>\n

17. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, \u201cOutstanding high temperature performance of nonpolar and semipolar InGaN solar cells,\u201d The 59th Electronic Materials Conference (EMC 2017)<\/em><\/strong>, Jun. 2017, South Bend, IN, Oral Presentation.<\/p>\n

16. H. Chen, X. Huang, H. Fu<\/strong>, Z. Lu, J. Montes, and Y. Zhao, \u201cCharacterizations of Kerr refractive index and nonlinear absorption on GaN crystals in polar, nonpolar and semipolar orientations,\u201d The 59th Electronic Materials Conference (EMC 2017)<\/strong><\/em>, Jun. 2017, South Bend, IN, Oral Presentation.<\/p>\n

15. H. Fu<\/strong>, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, \u201cAnalysis of reversed breakdown and leakage mechanisms of AlN Schottky diodes operating at elevated temperature,\u201d 2017 MRS Spring Meeting<\/em><\/strong>, Apr. 2017, Phoenix, AZ, Oral Presentation.<\/p>\n

14. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, X. Zhang, M. Iza, S. DenBaars, S. Nakamura, and Y. Zhao, \u201cDemonstration of Nonpolar and semipolar InGaN\/GaN multi-quantum well (MQW) solar cells,\u201d 2017 MRS Spring Meeting<\/em><\/strong>, Apr. 2017, Phoenix, AZ, Oral Presentation.<\/p>\n

13. H. Fu<\/strong>, Z. Lu, X. Huang, H. Chen, and Y. Zhao, \u201cCrystal orientation dependent intersubband transition in semipolar AlGaN\/GaN quantum well for optoelectronic applications,\u201d 2016 International Workshop on Nitride Semiconductors (IWN 2016)<\/em><\/strong>, Oct. 2016, Orlando, FL, Oral Presentation.<\/p>\n

12. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, D. Ding, and Y. Zhao, \u201cFabrication and characterization of nonpolar and semipolar InGaN\/GaN multi-quantum well (MQW) solar cells,\u201d 2016 International Workshop on Nitride Semiconductors (IWN 2016)<\/em><\/strong>, Oct. 2016, Orlando, FL, Oral Presentation (Late News).<\/p>\n

11. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, D. Ding, and Y. Zhao, \u201cTheoretical study on efficiency limits and loss analysis for single-junction InGaN solar cells using a semi-analytical model,\u201d 2016 International Workshop on Nitride Semiconductors (IWN 2016)<\/em><\/strong>, Oct. 2016, Orlando, FL, Oral Presentation.<\/p>\n

10. H. Fu<\/strong>, X. Huang, H. Chen, Z. Lu, and Y. Zhao, \u201cOn the reverse breakdown and leakage mechanisms of AlN Schottky diodes at high temperature,\u201d 2016 International Workshop on Nitride Semiconductors (IWN 2016)<\/em><\/strong>, Oct. 2016, Orlando, FL, Poster Presentation (Late News).<\/p>\n

9. Z. Lu, P. Tian, H. Fu<\/strong>, X. Huang, H. Chen, X. Liu, R. Liu, and Y. Zhao, \u201cThe effect of reflection on visible light communication system using a gallium nitride uLED and IEEE 802.11ac,\u201d 2016 International Workshop on Nitride Semiconductors (IWN 2016)<\/em><\/strong>, Oct. 2016, Orlando, FL, Poster Presentation.<\/p>\n

8. H. Chen, H. Fu<\/strong>, X. Huang, Z. Lu, and Y. Zhao, \u201cPolarization-dependent emission properties of InGaN light-emitting diodes modified by metallic grating,\u201d 2016 International Workshop on Nitride Semiconductors (IWN 2016)<\/em><\/strong>, Oct 2016, Orlando, FL, Poster Presentation.<\/p>\n

7. H. Fu<\/strong>, Z. Lu, X. Huang, H. Chen, and Y. Zhao, \u201cTerahertz intersubband transition in semipolar AlGaN\/GaN quantum wells for optoelectronic applications,\u201d The 58th Electronic Materials Conference (EMC 2016)<\/em><\/strong>, Jun. 2016, Newark, DE, Oral Presentation.<\/p>\n

6. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, D. Ding, and Y. Zhao, \u201cAnalysis of loss mechanisms in single-junction InGaN solar cells using a semi-analytical model,\u201d The 58th Electronic Materials Conference (EMC 2016)<\/em><\/strong>, Jun. 2016, Newark, DE, Oral Presentation.<\/p>\n

5. H. Chen, H. Fu<\/strong>, Z. Lu, X. Huang, and Y. Zhao, \u201cOptical propeoerties of highly polarized InGaN light-emiting diodes coated with silver grating,\u201d The 58th Electronic Materials Conference (EMC 2016)<\/strong><\/em>, Jun. 2016, Newark, DE, Oral Presentation.<\/p>\n

4. X. Huang, H. Fu<\/strong>, H. Chen, Z. Lu, D. Ding, and Y. Zhao, \u201cDevice Simulation and loss analysis for single-junction InGaN solar cells using a semi-analytical model,\u201d The 43rd IEEE Photovoltaic Specialists Conference (PVSC 2016)<\/strong><\/em>, Jun. 2016, Portland, OR, Poster Presentation.<\/p>\n

3. Z. Lu, H. Wang, S. R. Naqvi, H. Fu<\/strong>, Y. Zhao, H. Song, J. B. Christen, \u201cA point of care electrochemical impedance spectroscopy device<\/a>,\u201d 2015 28th IEEE International System-on-Chip Conference (SOCC)<\/em><\/strong>, Sept. 2015, Beijing, China, Oral Presentation.<\/p>\n

2. H. Fu<\/strong>, Z. Lu, and Y. Zhao, \u201cThe modeling of low-droop semipolar InGaN light emitting diodes with weak phase-space filling effect,\u201d 2015 Compound Semiconductor Week (CSW 2015) and the 42nd International Symposium on Compound Semiconductors (ISCS 2015)<\/em><\/strong>, Jun. 2015, Santa Barbara, CA, Oral Presentation.<\/p>\n

1. Z. Lu, H. Fu<\/strong>, H. Song, and Y. Zhao, \u201cA CMOS sun tracker for an application of CPV,\u201d 2015 Compound Semiconductor We<\/em>ek (CSW 2015) and the 42nd International Symposium on Compound Semiconductors (ISCS 2015)<\/em><\/strong>, Jun. 2015, Santa Barbara, CA, Poster Presentation.<\/p>\n","protected":false},"excerpt":{"rendered":"

Book Chapters and Articles (Invited) 5. H. Fu, K. Fu, D. Wang, D. H. Mudiyanselage, H. D. Ellis, I. Rahaman, C. Chang, S. M. Goodnick, D. J. Smith, R. J. Nemanich, F. A. Ponce, and Y. Zhao, \u201cSelective Area Regrowth and Doping for Vertical GaN Power Devices\u201d, chapter in \u201cGallium Nitride and Related Materials –…<\/p>\n","protected":false},"author":185,"featured_media":0,"parent":0,"menu_order":1,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-20","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/20","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/users\/185"}],"replies":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/comments?post=20"}],"version-history":[{"count":10,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/20\/revisions"}],"predecessor-version":[{"id":996,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/20\/revisions\/996"}],"wp:attachment":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/media?parent=20"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}