{"id":26,"date":"2020-05-19T17:56:32","date_gmt":"2020-05-20T00:56:32","guid":{"rendered":"https:\/\/www.ece.iastate.edu\/houqiangfu\/?page_id=26"},"modified":"2026-03-12T13:12:57","modified_gmt":"2026-03-12T20:12:57","slug":"news","status":"publish","type":"page","link":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/news\/","title":{"rendered":"News"},"content":{"rendered":"

\u00a0Bingcheng’s work on high-current-density AlN quasi-vertical diodes has been published in APL Electronic Devices! Congratulations!<\/h4>\n

3\/2026<\/p>\n

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Junzhe’s first paper on lateral AlN SBDs has been published in PSSA! Congratulations!<\/h4>\n

12\/2025<\/p>\n

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Bingcheng’s work on AlN trench MESFETs with gate trench treatment has been published in APL! Congratulations!<\/h4>\n

12\/2025<\/p>\n

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Bingcheng’s work on AlN MOSFETs has been published in IEEE TMAT! Congratulations!<\/h4>\n

8\/2025<\/p>\n

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Dinusha joined Texas State University as an Assistant Professor, and Ziyi joined Diamond Foundry as a senior device engineer. Big congrats to both of you, and best wishes for your future career!<\/h4>\n

8\/2025<\/p>\n

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Five abstracts were accepted to DRC\/EMC 2025 for oral presentations! Congratulations!<\/h4>\n

4\/2025<\/p>\n

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Dawei’s work on 10kV AlGaN\/GaN heterojunction diodes has been published in IEEE EDL! Congratulations!<\/h4>\n

4\/2025<\/p>\n

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Dinusha’s work on high-temperature performance of AlN SBD has been published on IEEE TED! Congratulations!<\/h4>\n

4\/2025<\/p>\n

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Jayashree was selected for the prestigious NSF Graduate Research Fellowship Program (GRFP) that supports outstanding graduate students in STEM. Congratulations!<\/h4>\n

4\/2025<\/p>\n

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Dinusha won the 2025 Palais Outstanding Doctoral Award due to his extraordinary record of accomplishments! This is the highest honor for the ECEE PhD students and awarded to only one student each year.<\/h4>\n

3\/2025<\/p>\n

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Timothy was selected for the TSMC Award under the FURI. Congratulations!<\/h4>\n

2\/2025<\/p>\n

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Dinusha won the top honor of ECEE Graduate Research Day Award! Congratulations!<\/h4>\n

1\/2025<\/p>\n

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Dinusha’s work on studying the high-temperature characteristics of AlN diodes was accepted to IEEE TED. Congratulations!<\/h4>\n

1\/2025<\/p>\n

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Our work on 2kV AlN MESFETs on AlN substrates has been featured by Compound Semiconductor and Semiconductor Today.<\/h4>\n

1\/2025<\/p>\n

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Bingcheng’s work on high-voltage AlN MESFETs on AlN substrates has been published in Applied Physics Express. Congratulations.<\/h4>\n

11\/2024<\/p>\n

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<\/h4>\n

Our work on AlN-on-AlN Schottky barrier diodes with ultralow ideality factor and record high breakdown field were featured by Compound Semiconductors.<\/h4>\n

10\/2024<\/p>\n

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Ziyi’s paper on GaN HEMTs with low-T CVD BN gate dielectric has been published in Applied Physics Letters. Congratulations.<\/h4>\n

07\/2024<\/p>\n

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Dinusha’s paper on AlN power diodes with ultra-low ideality factors has been published in Applied Physics Express. Congratulations!<\/h4>\n

07\/2024<\/p>\n

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Dinusha’s paper has been selected as “Highlights of 2023” in Applied Physics Express!<\/a> Congratulations.<\/h4>\n

4\/2024<\/p>\n

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Our work on high-voltage AlN Schottky barrier diodes has been featured by Compound Semiconductor.\u00a0<\/a><\/h4>\n

3\/2024<\/p>\n

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Dr. Fu has been selected for the NSF CAREER Award for his project on developing high-performance UWBG power devices. (ASU News<\/a>, CS Magazine<\/a>)<\/h4>\n

2\/2024<\/p>\n

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Six papers were accepted to 2024 MRS Spring Meeting! Congratulations to Dinusha, Dawei, Bingcheng, and Ziyi!<\/h4>\n

2\/2024<\/p>\n

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Dinusha\u2019s work on the first 3kV AlN power diodes was accepted to Applied Physics Express! Congratulations!<\/h4>\n

12\/2023<\/p>\n

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Dawei\u2019s work on the reliability study of vertical GaN PIN diodes was accepted to IEEE Transactions on Electron Devices! Congratulations!<\/h4>\n

12\/2023<\/p>\n

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Dinusha\u2019s work on Ga2O3\/NiO heterojunctions was highlighted as “Spotlights 2023<\/a>” in Applied Physics Express! Congratulations!<\/h4>\n

9\/2023<\/p>\n

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Our patent on power electronics is highlighted in ASU News “ASU ranks No. 8 among US universities issued US utility patents in 2022<\/a>“.<\/h4>\n

9\/2023<\/p>\n

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Dawei’s work on Ga2O3 CAVETs was accepted to IEEE Transactions on Electron Devices! Congratulations<\/h4>\n

9\/2023<\/p>\n

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Dinusha’s work on Ga2O3\/NiO heterojunctions was accepted to Applied Physics Express! Congratulations!<\/h4>\n

9\/2023<\/p>\n

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Dinusha won the prestigious ASU Outstanding Research Award! Congratulations!<\/h4>\n

The Outstanding Research Award recognizes graduate and professional students that exemplify excellence in research on all ASU campuses. The award aims at fostering the development of innovative projects or research of interdisciplinary character that demonstrate a positive impact on the academic\/local community with a notable contribution to their field.<\/p>\n

4\/2023<\/p>\n

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Four papers were accepted to the 65th Electronic Materials Conference (65rd EMC) for oral presentation! One of Dawei’s work was accepted as LATE NEWS. Congratulations to Dinusha, Dawei and Ziyi!<\/h4>\n

03\/2023<\/p>\n

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Jayashree was invited to participate in 2023 Summer Undergraduate Research Fellowship (SURF) program at Stanford University\u2019s School of Engineering. Congratulations!<\/h4>\n

This is a highly prestigious program, where she will join 29 other SURF scholars from around the world for a summer full of engaging research, community building, and professional development.<\/p>\n

3\/2023<\/p>\n

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Dinusha’s paper on AlGaO SBDs was accepted to Journal of Vacuum Science & Technology A. Congratulations!<\/h4>\n

1\/2023<\/p>\n

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Jayashree was selected to participate in the ASU Grand Challenges Scholarship Program (GCSP) and ASU Fulton Undergraduate Research Initiative (FURI). Congratulations!<\/h4>\n

GCSP is top honor for Fulton Engineering undergraduate students, endorsed by both ASU and the National Academy of Engineering (NAE). And FURI is top honor for Fulton Engineering undergraduate students to conduct high-level research.<\/p>\n

12\/2022<\/p>\n

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Our review paper on InGaN solar cells was published in Materials Today Energy. Congratulations!<\/h4>\n

12\/2022<\/p>\n

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Dr. Fu was selected as the winner of the Electronics 2022 Young Investigator Award<\/a>. Congratulations!<\/h4>\n

11\/2022<\/p>\n

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Our recent paper on GaN-on-GaN diodes with avalanche capability enabled by hydrogen plasma treatment was published in Applied Physics Letters. Congratulations!<\/h4>\n

08\/2022<\/p>\n

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Our recent invited review on ultrawide bandgap materials was published in the Oxford Open Materials Science. Congratulations!<\/h4>\n

05\/2022<\/p>\n

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Our recent invited review on GaN intersubband transition was published in the Journal of Applied Physics. Congratulations!<\/h4>\n

05\/2022<\/p>\n

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Dinusha’s work on AlGaO was accepted as LATE NEWS in 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022). Congratulations!<\/h4>\n

05\/2022<\/p>\n

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Dinusha and Dawei’s conference abstracts were accepted to 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022). Congratulations!<\/h4>\n

03\/2022<\/p>\n

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Two papers were accepted to 2022 MRS Spring Meeting! Congratulations!<\/h4>\n

03\/2022<\/p>\n

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Dinusha’s paper on Ga2O3\/GaN heterojunction p-n diodes was accepted to IEEE Journal of\u00a0 the Electron Devices Society. Congratulations!<\/h4>\n

01\/2022<\/p>\n

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Dawei’s paper on designing delta-doped AlGaO\/GaO HEMTs was accepted to IEEE Transactions on Electron Devices. Congratulations!<\/h4>\n

11\/2021<\/p>\n

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Dr. Fu was awarded the ISU Regents Innovation Fund Award.<\/h4>\n

09\/2021<\/p>\n

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Our comprehensive review papers (Part I<\/a> and Part II<\/a>) on vertical GaN power devices are published in Transactions on Electron Devices!<\/h4>\n

07\/2021<\/p>\n

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Our review paper on selective area doping and regrowth for vertical GaN power devices<\/a> is accepted to Materials Today (Impact Factor: 26.416), which is one of the most highly respected sources of news and reviews in materials science. Congratulations!<\/h4>\n

04\/2021<\/p>\n

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Dinusha and Dawei’s conference abstracts were accepted to 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021). Congratulations!<\/h4>\n

04\/2021<\/p>\n

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Two papers were accepted to 63rd Electronic Materials Conference (63rd EMC)! Congratulations!<\/h4>\n

03\/2021<\/p>\n

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Dinusha’s conference abstract was accepted as the Late News to the 2021 MRS Spring Meeting for presentation! Congratulations!<\/h4>\n

02\/2021<\/p>\n

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Dawei’s conference abstract was accepted to the 2021 MRS Spring Meeting for presentation! Congratulations!<\/h4>\n

01\/2021<\/p>\n

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Dinusha joined our group as a PhD student in the ECpE department. Welcome!<\/h4>\n

01\/2021<\/p>\n

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Dawei joined our group as a PhD student in the ECpE department. Welcome!<\/h4>\n

01\/2021<\/p>\n

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New paper on Ga2O3 film with record-high mobility using TMGa MOCVD growth was accepted to Applied Physics Letters in the\u00a0 Ultrawide Bandgap Semiconductor special issue. Congratulations!<\/h4>\n

12\/2020<\/p>\n

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New paper on (001) and (-201) Ga2O3 DLTS measurements was published in Journal of Applied Physics. Congratulations!<\/h4>\n

12\/2020<\/p>\n

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“Better etching enhances selective area doping for vertical GaN power devices<\/a>,” Compound Semiconductor.<\/h4>\n

12\/2019<\/p>\n

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“First steps to high temperature GaN memory?<\/a>” Compound Semiconductor.<\/strong><\/h4>\n

04\/2019<\/p>\n

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“New memory device can take the heat<\/a>,” IEEE Spectrum.<\/strong><\/h4>\n

03\/2019<\/p>\n

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“Vertical gallium nitride Schottky diodes with single and double drift layers<\/a>,” <\/strong>Semiconductor Today, <\/strong>Silicon Valley Microelectronics, etc.<\/strong><\/h4>\n

10\/2017<\/p>\n

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“Aluminium nitride Schottky barrier diodes with breakdown more than 1 kV<\/a>,” <\/strong>Semiconductor Today, <\/strong>Silicon Valley Microelectronics,\u00a0 Semiconductor Society (India), University of Strathclyde, China Wechat Platform, etc. <\/strong><\/h4>\n

08\/2017<\/p>\n

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“Indium gallium nitride solar cells on non-polar and semi-polar substrates<\/a>,” <\/strong>Semiconductor Today.<\/strong><\/h4>\n

05\/2017<\/p>\n

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“Buffer and drift layer effects on vertical gallium nitride diodes<\/a>,” <\/strong><\/h4>\n

Semiconductor Today, Silicon Valley Microelectronics.<\/strong><\/h4>\n

04\/2017<\/p>\n","protected":false},"excerpt":{"rendered":"

\u00a0Bingcheng’s work on high-current-density AlN quasi-vertical diodes has been published in APL Electronic Devices! Congratulations! 3\/2026 Junzhe’s first paper on lateral AlN SBDs has been published in PSSA! Congratulations! 12\/2025 Bingcheng’s work on AlN trench MESFETs with gate trench treatment has been published in APL! Congratulations! 12\/2025 Bingcheng’s work on AlN MOSFETs has been published…<\/p>\n","protected":false},"author":185,"featured_media":0,"parent":0,"menu_order":3,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-26","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/26","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/users\/185"}],"replies":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/comments?post=26"}],"version-history":[{"count":3,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/26\/revisions"}],"predecessor-version":[{"id":993,"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/pages\/26\/revisions\/993"}],"wp:attachment":[{"href":"https:\/\/faculty.engineering.asu.edu\/houqiangfu\/wp-json\/wp\/v2\/media?parent=26"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}