Th ISE lab seeks a Post-Doctoral Research Associate to conduct research on electronic devices based on 2D layered materials. The successful candidate will have experience in the fabrication of high-quality electronic devices based on 2D materials (graphene, TMDs, h-BN, black phosphorus, etc.). This includes 2D material preparation (exfoliation, transfer, annealing, etc.) as well as device…

The ISE lab seeks highly qualified applicants for our PhD program. Outstanding applicants will be considered for Graduate Research Assistant positions. Applicants passionate about electrical engineering and applied physics with hands-on experience with device processing, semiconductor materials and device characterization, and theoretical modeling will receive favorable consideration.

Our team has received new funding from The ARO (Army Research Office) in collaboration with Alphacore Inc. to characterize and model the cryogenic operation of nanoscale FD-SOI and bulk CMOS MOSFETs. 

Our team has received new funding from NSF, in collaboration with the Tongay lab at ASU, to develop spin-FETs and other electronic devices using 2-D Janus Transition Metal Dichalcogenides (TMDs).

Our team has received new funding from DMEA, in collaboration with the Zhao Group at ASU and Alphacore Inc., to develop predictive models for radiation effects in  Ga2O3 Schottky barrier diodes through machine learning.