Ivan Sanchez Esqueda

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Ivan Sanchez Esqueda

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2024:

  • J. Xie, N. Patoary, A. R. Laskar, N. D. Ignacio, X. Zhan, U. Celano, D. Akinwande, I. Sanchez Esqueda, “Quantum Conductance in Vertical Hexagonal Boron Nitride Memristors with Graphene-Edge contacts,” Nano Letters, 2024, DOI: https://doi.org/10.1021/acs.nanolett.3c04057

2023: 

  • F. A. Mamun, S. Vrudhula, D. Vasileska, H. Barnaby, I. Sanchez Esqueda, “Evidence of transport degradation in 22 nm FD-SOI charge trapping transistors for neural network applications,” Solid-State Electronics, 2023, 209, 108783. DOI: https://doi.org/10.1016/j.sse.2023.108783
  • G. Zhou, N. Patoary, J. Xie, F. A. Mamun, I. Sanchez Esqueda, “Trapping effects on charge transport in graphene field-effect transistors with high-K gate dielectrics,” Journal of Applied Physics, 2023, 134, 144302, DOI: https://doi.org/10.1063/5.0166480
  • Sahra Afshari, Jing Xie, Mirembe Musisi-Nkambwe Sritharini Radhakrishnan, and Ivan Sanchez Esqueda, “Unsupervised learning in hexagonal boron nitride memristor-based spiking neural networks,” Nanotechnology, 2023, 34, 445703, DOI: https://doi.org/10.1088/1361-6528/acebf5
  • Sahra Afshari, Sritharini Radhakrishnan, Jing Xie, Mirembe Musisi-Nkambwe, Jian Meng, Wangxin He, Jae-sun Seo, Ivan Sanchez Esqueda, “Dot-product computation and logistic regression with 2D hexagonal-Boron Nitride (h-BN) memristor arrays,” 2D Materials, 2023, 10, 035031. DOI: https://doi.org/10.1088/2053-1583/acdfe1
  • N. Patoary, J. Xie, G. Zhou, F. A. Mamun, M. Sayyad, S. Tongay, and I. Sanchez Esqueda, “Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling,” Scientific Reports, 2023, 13, 3304. DOI: https://doi.org/10.1038/s41598-023-30317-4
  • M. Spear, H. J. Barnaby, T. Wallace, J. Solano, O. Forman, D. Wilson, I. Sanchez Esqueda, A. Privat, M. Turowski, R. Von Niederhausern, M. Marinella, ” Non-linear Coupling Effects in Fully Depleted SOI Transistors,” IEEE Transactions on Nuclear Science, 2023, DOI: 10.1109/TNS.2023.3252439
  • Sayyad, M., Qin, Y., Kopaczek, J., Gupta, A., Patoary, N., Sinha, S., Benard, E., Davis, A., Yumigeta, K., Wu, C.-L., Li, H., Yang, S., Esqueda, I. S., Singh, A., Tongay, S., Strain Anisotropy Driven Spontaneous Formation of Nanoscrolls from 2D Janus Layers. Adv. Funct. Mater. 2023, 2303526. https://doi.org/10.1002/adfm.202303526

2022: 

  • T. Wallace, M. Spear, A. Privat, J. Neuendank, G. Irumva, D. Wilson, I. Sanchez Esqueda, H. J. Barnaby, M. Turowski, E. Mikkola, D. Hughart, M. J. Marinella, J. Brunhaver, A. Gutierrez, R. Von Niederhausern, S. Holloway, D. Beltran, J. L. Taggart, “Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures,” IEEE Transactions on Nuclear Science, 2022, DOI: 10.1109/TNS.2022.3221060
  • F. A. Mamun, D. Vasileska and I. Sanchez Esqueda, “Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures,” in IEEE Transactions on Electron Devices, 2022, http://doi.org/10.1109/TED.2022.3199328
  • J. Xie, S. Afshari, I. Sanchez Esqueda, “Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware,” npj 2D Materials and Applications, 2022, 6, 50, https://doi.org/10.1038/s41699-022-00328-2
  • J. Solano et al., “Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology,” 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC), Provo, UT, USA, 2022, pp. 1-5, doi: https://doi.org/10.1109/REDW56037.2022.9921673
  • J. Neuendank et al., “Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits,” 2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC), Provo, UT, USA, 2022, pp. 1-9, doi: https://doi.org/10.1109/REDW56037.2022.9921478
  • J. Xie, N. M. Patoary, G. Zhou, M. Y. Sayyad, S. Tongay, and I. S. Esqueda, “Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors,” Nanotechnology, 2022, 33, 225702. DOI: https://doi.org/10.1088/1361-6528/ac55d2
  • S. Afshari, M. Musisi-Nkambwe, and I. S. Esqueda, “Analyzing the impact of memristor variability on crossbar implementation of regression algorithms with smart weight update pulsing techniques,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2022. DOI: 10.1109/TCSI.2022.3144240
  • G. Zhou, F. Al Mamun, J. Yang-Scharlotta, D. Vasileska, and I. S. Esqueda, “Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model,” EEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1306-1312, 2022. DOI: 10.1109/TED.2022.3142650
  • I. P. Livingston, I. S. Esqueda, H. J. Barnaby, “An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges,” Solid-State Electronics, vol. 187, 108193, 2022. DOI: https://doi.org/10.1016/j.sse.2021.108193

2021: 

  • M. Musisi-Nkambwe, S. Afshari, H. Barnaby, M. Kozicki, and I. Sanchez Esqueda, “The viability of analog-based accelerators for neuromorphic computing: a survey,” Neuromorphic Computing and Engineering, 2021, 1, 012001.

2020: 

  • Trivedi, D. B., Turgut, G., Qin, Y., Sayyad, M. Y., Hajra, D., Howell, M., Liu, L., Yang, S., Patoary, N. H., Li, H., Petrić, M. M., Meyer, M., Kremser, M., Barbone, M., Soavi, G., Stier, A. V., Müller, K., Yang, S., Esqueda, I. S., Zhuang, H., Finley, J. J., Tongay, S., Room‐Temperature Synthesis of 2D Janus Crystals and their Heterostructures. Adv. Mater. 2020, 32, 2006320.

2019: 

  • I. P. Livingston, I. S. Esqueda, H. J. Barnaby, “Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations,” Solid-State Electronics, vol. 160, 107609, 2019.

2018:

  • X. Yan, H. Wang, I. S. Esqueda, “Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors,” Nano Letters, vol. 19, no. 1, pp. 482-487, 2018.​
  • D. Sarkar, I. S. Esqueda, R. Kapadia, “Nanowire Field-Effect Transistors,” in Advanced Nanoelectronics: Post-Silicon Materials and Devices, John Wiley and Sons, 2018.
  • I. S. Esqueda, H. Zhao, H. Wang, “Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses,” Journal of Applied Physics, vol. 124, no. 15, pp. 152133, 2018. (Featured Article).
  • X. Yan, H. Wang, H. Barnaby, and I. S. Esqueda, “Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures,” IEEE Trans. on Dev. and Mater. Reliab., vol. 13, no. 3, pp. 456-462, 2018.
  • I. S. Esqueda, X. Yan, C. Rutherglen, A. Kane, T. Cain, P. Marsh, Q. Liu, K. Galatsis, H. Wang, C. Zhou, “Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing,” ACS Nano, vol. 12, no. 7, pp. 7352-7361, 2018.
  • R. Fang, I. Livingston, I. S. Esqueda, M. Kozicki, H. Barnaby, “Bias temperature instability model using dynamic defect potential for predicting CMOS aging,” Journal of Applied Physics, vol. 123, no. 22, pp. 225701, 2018.
  • X. Yan, I. S. Esqueda, J. Ma, J. Tice, and H. Wang, “High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure,” Appl. Phys. Lett., vol. 112, no. 3, 032101, 2018. (Editor’s Pick)

2017:

  • I. S. Esqueda, H. Tian, X. Yan, H. Wang, “Transport properties and device prospects of ultra-thin black phosphorus on hexagonal boron nitride,” IEEE Trans. Elec. Dev., vol. 64, no. 12, pp. 5163-5171, Dec 2017.
  • I. S. Esqueda, “Confinement effects on radiation hardness of SOI FinFETs at the scaling limit,” IEEE Electron Device Letters, vol. 38, no. 3, pp. 306-309, 2017.

2016:

  • I. S. Esqueda and H. J. Barnaby, “Surface-Potential-Based Compact Modeling of BTI,” Proceedings of the IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, pp. XT-06-1-XT-06-6, April 2016.

2015:

  • I. S. Esqueda and C. D. Cress, “Modeling Radiation-Induced Scattering in Graphene,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2906-9113, 2015.
  • P. C. Adell, B. Rax, I. S. Esqueda, and H. J. Barnaby, “Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2476-2481, 2015.
  • I. S. Esqueda, H. J. Barnaby, M. P. King, “Compact modeling of total ionizing dose and aging effects in MOS technologies,” IEEE Trans. Nucl. Sci., vol. 62, no. 4, pp. 1501-1515, 2015.
  • I. S. Esqueda, C. D. Cress, Y. Cao, Y. Che and C. Zhou, “The impact of defect scattering on the quasi-Ballistic transport of nanoscale conductors,” Journal of Applied Physics, 117, 084319, 2015.
  • I. S. Esqueda, “The impact of stress-induced defects on MOS electrostatics and short-channel effects,” Journal of Solid State Electronics, 103, pp. 167-172, 2015.

2014:

  • I. S. Esqueda, C. D. Cress, Y. Che, Y. Cao and C. Zhou, “Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure,” Journal of Applied Physics, 115, 054506, 2014.
  • I. S. Esqueda and H. J. Barnaby, “A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits,” Journal of Solid State Electronics, 91, pp. 81-86, 2014.
  • Y. Cao, J. Velamala, K. Sutaria, M. Chen, J. Ahlbin, I. S. Esqueda, M. Bajura, M. Fritze, “Cross-layer modeling and simulation of circuit reliability,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 33, no. 1, pp. 8-23, 2014.

2013:

  • I. S. Esqueda, C. D. Cress, T. J. Anderson, J. R. Ahlbin, M. Bajura, M. Fritze and J. S. Moon, “Modeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs),” Electronics, no. 2, pp. 234-245, 2013.
  • I. S. Esqueda and H. J. Barnaby, “Defect-based compact model for circuit reliability simulation in advanced CMOS technologies,” IEEE International Integrated Reliability Workshop (IIRW) Conference Proceedings, pp. 45-49, 2013.
  • M. Mitkova, P. Chen, M. Ailavajhala, D. P. Butt, D. A. Tenne, H. Barnaby, I. S. Esqueda, “Gamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application,” Journal of Non-Crystalline Solids, vol. 377, no. 1, pp. 195-199, 2013.

2012:

  • P. C. Adell, I. S. Esqueda, H. J. Barnaby, B. Rax and A. H. Johnston, “Impact of Low Temperatures (<125 K) on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3081-3086, 2012.
  • C. D. Cress, J. G. Champlain, I. S. Esqueda, J. T. Robinson, A. L. Friedman and J. J. McMorrow, “Total ionizing dose induced charge carrier scattering in graphene devices,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3045-3053, 2012.
  • I. S. Esqueda and H. J. Barnaby, “Modeling the Non-Uniform Distribution of Radiation-Induced Interface Traps,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 723-727, 2012.
  • I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” IEEE Trans. Nucl. Sci., vol. 59, no. 4, pp. 701-706, 2012.
  • I. S. Esqueda, Y. Fu, C. D. Cress, J. Zhang, C. Zhou, J. Ahlbin, M. Bajura, G. Boverman and M. Fritze, “Modeling the effect of hysteresis on aligned nanotube FETs exposed to ionizing radiation,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2012.

2011:

  • I. S. Esqueda, H. J. Barnaby, K. E. Holbert, and Y. Boulghassoul, “Modeling Inter-device Leakage in 90 nm Bulk CMOS Devices,” IEEE Trans. Nucl. Sci., vol. 58, no. 3, pp. 793-799, 2011.
  • I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” IEEE Trans. Nucl. Sci., vol. 58, No. 2, pp. 499-505, 2011.
  • I. S. Esqueda, H. J. Barnaby, P. C. Adell, B. G. Rax, H. P. Hjalmarson, M. L. McLain and R. L. Pease, “Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp. 2945-2952, 2011.
  • I. S. Esqueda and H. J. Barnaby, “Modeling the non-uniform distribution of radiation-induced interface traps,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 15-19, 2011.
  • I. S. Esqueda, H. J. Barnaby and P. C. Adell, “Modeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 1-6, 2011.
  • P. Chen, M. Ailavajhala, M. Mitkova, D. Tenne, I. S. Esqueda and H. J. Barnaby, “Structural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing,” IEEE Workshop on Microelectronics and Electron Devices, pp. 1-4, 2011.

2010:

  • G. J. Schlenvogt, H. J. Barnaby, I. S. Esqueda, K. E. Holbert, J. Wilkinson, S. Morrison, L. Tyler, “Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit,” IEEE Trans. Nucl. Sci., vol.57, no.6, pp.3609-3614, 2010.

2009:

  • I. S. Esqueda, H. J. Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf and W. Xiong, “Modeling the Radiation Response of Fully-Depleted SOI n-channel MOSFETs,” IEEE Trans. Nucl. Sci., vol. 56, pp. 2247-2250, 2009.
  • I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, pp. 2-6, 2009.
  • H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Trans. Circuits and Systems, vol. 56, no. 8 pp. 1870-1882, 2009.
  • M. L. McLain, H. J. Barnaby, I. S. Esqueda, J. Oder and B. Vermeire, “Reliability of High Performance Standard Two-Edge and Radiation Hardened by Design Enclosed Geometry Transistors.” Proceedings of the 47th IEEE Annual International Reliability Physics Symposium (IRPS), pp. 174-179, 2009.

2008:

  • F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, P. C. Adell, I. S. Esqueda, M. L. McLain, H. J. Barnaby, S. Cristoloveanu, W. Xiong, “Gate-Length and Drain-Bias Dependence of Band-to-Band tunneling induced Drain Leakage in Irradiated Fully Depleted SOI devices,” IEEE Trans. Nucl. Sci., vol. 55, pp. 3259-3264, 2008.
  • H. J. Barnaby, M. L. McLain, I. S. Esqueda, and X. J. Chen, “Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,” IEEE Custom Integrated Circuits Conference (CICC), pp. 273 – 280, 2008.

< 2008:

  • H. J. Barnaby, M. L. McLain, I. S. Esqueda, “Total-ionizing-dose effects on isolation oxides in modern CMOS technologies,” Nuclear Instruments and Methods in Physics Research B 261, pp. 1142–1145, 2007.
  • I. S. Esqueda, H. J. Barnaby, and M. L. Alles, “Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies,” IEEE Trans. Nucl. Sci., vol. 52, pp. 2259-2264, 2005.
  • M. L. McLain, M. Campola, I. S. Esqueda and H. J. Barnaby, “Modeling Dog Bone Gate Geometry n-Channel MOSFETs,” Radiation Effects on Components and Systems (RADECS) Conference Proceedings, 2005.
  • E. H. Minson, I. S. Esqueda, H. J. Barnaby, R. L. Pease, D. G. Platter and G. Dunham, “Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides,” IEEE Trans. Nucl. Sci., vol. 51, pp. 3723-3729, 2004.