Our research group is exploring the integration of advanced and novel materials, as well as the development of new device functionalities for machine learning (ML) and neuromorphic computing applications. In this area we have ongoing research activities related to:

  1. The nanofabrication of next-generation resistive switching devices and non-volatile memory (NVM).
  2. Development of novel synaptic devices and NVM based on 2-D layered materials and their heterostructures.  
  3. Device and array-level modeling of synaptic devices for in-memory computing and  ML hardware implementation.
  4. Discovery of new material/device functionalities to support efficient in-memory computing architectures.