{"id":100,"date":"2020-12-29T17:53:29","date_gmt":"2020-12-30T00:53:29","guid":{"rendered":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/?page_id=100"},"modified":"2026-04-01T15:09:02","modified_gmt":"2026-04-01T22:09:02","slug":"publications","status":"publish","type":"page","link":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/publications\/","title":{"rendered":"Publications"},"content":{"rendered":"\n<p><a href=\"https:\/\/scholar.google.com\/citations?user=6tfG2dcAAAAJ&amp;hl=en\">Google Scholar<\/a><\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Selected Publications<\/h2>\n\n\n\n<p><strong>\u2022 On-chip direct synthesis of boron nitride memristors<\/strong><br><em>Nature Nanotechnology (2025)<br><\/em><a href=\"https:\/\/doi.org\/10.1038\/s41565-025-01988-z\">https:\/\/doi.org\/10.1038\/s41565-025-01988-z<\/a><\/p>\n\n\n\n<p><strong>\u2022 Quantum Conductance in Vertical h-BN Memristors with Graphene-Edge Contacts<\/strong><br><em>Nano Letters (2024)<br><\/em><a href=\"https:\/\/doi.org\/10.1021\/acs.nanolett.3c04057\">https:\/\/doi.org\/10.1021\/acs.nanolett.3c04057<\/a><\/p>\n\n\n\n<p><strong>\u2022 Improvements in 2D p-type WSe\u2082 transistors towards ultimate CMOS scaling<\/strong><br><em>Scientific Reports (2023)<br><\/em><a href=\"https:\/\/doi.org\/10.1038\/s41598-023-30317-4\">https:\/\/doi.org\/10.1038\/s41598-023-30317-4<\/a><\/p>\n\n\n\n<p><strong>\u2022 Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing<\/strong><br><em>ACS Nano (2018)<br><\/em><a href=\"https:\/\/doi.org\/10.1021\/acsnano.8b03831\">https:\/\/doi.org\/10.1021\/acsnano.8b03831<\/a><\/p>\n\n\n\n<p><strong>\u2022 h-BN memristor arrays for analog-based machine learning hardware<\/strong><br><em>npj 2D Materials and Applications (2022)<br><\/em><a href=\"https:\/\/doi.org\/10.1038\/s41699-022-00328-2\">https:\/\/doi.org\/10.1038\/s41699-022-00328-2<\/a><\/p>\n\n\n\n<p><strong>\u2022 Impact of Back-Gate Biasing on 22 nm FD-SOI MOSFETs at Cryogenic Temperatures<\/strong><br><em>IEEE Transactions on Electron Devices (2022)<br><\/em><a href=\"https:\/\/doi.org\/10.1109\/TED.2022.3199328\">https:\/\/doi.org\/10.1109\/TED.2022.3199328<\/a><\/p>\n\n\n\n<div style=\"height:12px\" aria-hidden=\"true\" class=\"wp-block-spacer\"><\/div>\n\n\n\n<h2 class=\"wp-block-heading\">Full publication list<\/h2>\n\n\n\n<p><strong>2026: <\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>F. Mamun, M. Spear, J. Solano, J. Neuendank, M. Turowski, H. Barnaby, D. Vasileska, I. Sanchez Esqueda, \u201cTID Effects on FD-SOI Nanoscale Transistors at Cryogenic Temperatures,\u201d <em>IEEE Transactions on Nuclear Science<\/em>, 2026. <a href=\"https:\/\/doi.org\/10.1109\/TNS.2026.3661059\">https:\/\/doi.org\/10.1109\/TNS.2026.3661059<\/a><\/li>\n\n\n\n<li>F. Mamun, K. Li, D. Vasileska, I. Sanchez Esqueda, \u201cEffects of Carrier Degeneracy on Electron Transport in Nanoscale FD-SOI Transistors at Cryogenic Temperatures,\u201d <em>IEEE Transactions on Electron Devices<\/em>, 2026. <a href=\"https:\/\/doi.org\/10.1109\/TED.2026.3661367\">https:\/\/doi.org\/10.1109\/TED.2026.3661367<\/a><\/li>\n<\/ul>\n\n\n\n<p><strong>2025: <\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>J. Xie, A.E. Yekta, F. Mamun, K. Zhu, M. Chen, S. Pazos, W. Zheng, X. Zhang, S. Tongay, X. Li, H. Wu, R. Nemanich, D. Akinwande, M. Lanza, I. Sanchez Esqueda, \u201cOn-Chip Direct Synthesis of Boron Nitride Memristors,\u201d <em>Nature Nanotechnology<\/em>, 2025. <a href=\"https:\/\/doi.org\/10.1038\/s41565-025-01988-z\" data-type=\"link\" data-id=\"https:\/\/doi.org\/10.1038\/s41565-025-01988-z\">https:\/\/doi.org\/10.1038\/s41565-025-01988-z<\/a><\/li>\n\n\n\n<li>M.A.R. Laskar, S. Ahmed, P. Tummala, et al. \u201cElectron-Beam Excited Conductive Atomic Force Microscopy for Back Contact Free, Wafer-Scale and In-Line Compatible Electrical Characterization of 2D Materials.\u201d <em>Advanced Science<\/em>, e05113. 2025. <a href=\"https:\/\/doi.org\/10.1002\/advs.202505113\">https:\/\/doi.org\/10.1002\/advs.202505113<\/a><\/li>\n\n\n\n<li>J. Kopaczek, P. Hays, H. Wu, B. Povilus, M. Erdi, R. Banerjee, C.-L. Wu, I. Sanchez Esqueda, R. Kudrawiec, A. Botana, S. A. Tongay, \u201cDark-to-Bright Exciton Transition in 2D Janus Excitonic Semiconductors via Metal Cation Alloying,\u201d <em>ACS Nano<\/em>, vol. 19, no. 44, 38685-38695, 2025. <a href=\"https:\/\/doi.org\/10.1021\/acsnano.5c13372\">https:\/\/doi.org\/10.1021\/acsnano.5c13372<\/a><\/li>\n\n\n\n<li>C. L. Wu, M. Y. Sayyad, R. E. Sailus, D. Dey, J. Xie, P. Hays, J. Kopaczek, Y. Ou, S. Susarla, I. Sanchez Esqueda, A. S. Botana, S. A. Tongay, \u201cMetallic 2D Janus SNbSe Layers Driven by a Structural Phase Change,\u201d <em>Nanoscale<\/em>, vol. 17, no. 13, 7801-7812, 2025. <a href=\"https:\/\/doi.org\/10.1039\/D4NR04059G\">https:\/\/doi.org\/10.1039\/D4NR04059G<\/a><\/li>\n\n\n\n<li>F. O. Caligaris, M. J. Hossain, M. A. R. Laskar, Y. Bostros, M. Pesic, R. Davenport, I. Sanchez Esqueda, S. A. Tongay, U. Celano, \u201cPhysics-Informed Computer Vision Assisted Defects Classifier in Transition Metal Dichalcogenides using Atomic Force Microscopy,\u201d <em>APL Materials<\/em>, vol. 9, no. 9. 2025. <a href=\"https:\/\/doi.org\/10.1063\/5.0287769\">https:\/\/doi.org\/10.1063\/5.0287769<\/a><\/li>\n<\/ul>\n\n\n\n<p><strong>2024: <\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>J. Xie, N. Patoary, A. R. Laskar, N. D. Ignacio, X. Zhan, U. Celano, D. Akinwande, I. Sanchez Esqueda, &#8220;Quantum Conductance in Vertical Hexagonal Boron Nitride Memristors with Graphene-Edge contacts,&#8221; <em>Nano Letters<\/em>, 2024, DOI: <a href=\"https:\/\/doi.org\/10.1021\/acs.nanolett.3c04057\">https:\/\/doi.org\/10.1021\/acs.nanolett.3c04057<\/a><\/li>\n\n\n\n<li>M. Musisi-Nkambwe, S. Afshari, J. Xie, H. Warner, I. Sanchez Esqueda*, \u201cA Study on h-BN Resistive Switching Temporal Response,\u201d <em>Advanced Electronic Materials<\/em>, 10, 2400022, 2024. <a href=\"https:\/\/doi.org\/10.1002\/aelm.202400022\">https:\/\/doi.org\/10.1002\/aelm.202400022<\/a><\/li>\n\n\n\n<li>N. Patoary, F. A. Mamun, J. Xie, T. Grasser, I. Sanchez Esqueda, \u201cAnalysis and EOT Scaling on Top- and Double-Gate 2D CVD-grown Monolayer MoS2 FETs,\u201d <em>Advanced Electronic Materials<\/em>, 10, 2400152, 2024. <a href=\"https:\/\/doi.org\/10.1002\/aelm.202400152\">https:\/\/doi.org\/10.1002\/aelm.202400152<\/a><\/li>\n<\/ul>\n\n\n\n<p><strong>2023:&nbsp;<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>F. A. Mamun, S. Vrudhula, D. Vasileska, H. Barnaby, I. Sanchez Esqueda, &#8220;Evidence of transport degradation in 22 nm FD-SOI charge trapping transistors for neural network applications,&#8221; <em>Solid-State Electronics<\/em>, 2023, <strong>209<\/strong>, 108783. DOI: <a href=\"https:\/\/doi.org\/10.1016\/j.sse.2023.108783\">https:\/\/doi.org\/10.1016\/j.sse.2023.108783<\/a> <\/li>\n\n\n\n<li>G. Zhou, N. Patoary, J. Xie, F. A. Mamun, I. Sanchez Esqueda, &#8220;Trapping effects on charge transport in graphene field-effect transistors with high-K gate dielectrics,&#8221; <em>Journal of Applied Physics<\/em>, 2023, <strong>134<\/strong>, 144302, DOI: <a href=\"https:\/\/doi.org\/10.1063\/5.0166480\" target=\"_blank\" rel=\"noreferrer noopener\">https:\/\/doi.org\/10.1063\/5.0166480<\/a><\/li>\n\n\n\n<li>Sahra Afshari, Jing Xie, Mirembe Musisi-Nkambwe Sritharini Radhakrishnan, and Ivan Sanchez Esqueda, &#8220;Unsupervised learning in hexagonal boron nitride memristor-based spiking neural networks,&#8221; <em>Nanotechnology<\/em>, 2023, <strong>34<\/strong>, 445703, DOI: <a href=\"https:\/\/doi.org\/10.1088\/1361-6528\/acebf5\">https:\/\/doi.org\/10.1088\/1361-6528\/acebf5<\/a><\/li>\n\n\n\n<li>Sahra Afshari, Sritharini Radhakrishnan, Jing Xie, Mirembe Musisi-Nkambwe, Jian Meng, Wangxin He, Jae-sun Seo, Ivan Sanchez Esqueda, \u201cDot-product computation and logistic regression with 2D hexagonal-Boron Nitride (h-BN) memristor arrays,\u201d <em>2D Materials<\/em>, 2023, <strong>10<\/strong>, 035031. DOI: <a href=\"https:\/\/doi.org\/10.1088\/2053-1583\/acdfe1\">https:\/\/doi.org\/10.1088\/2053-1583\/acdfe1<\/a><\/li>\n\n\n\n<li>N. Patoary, J. Xie, G. Zhou, F. A. Mamun, M. Sayyad, S. Tongay, and I. Sanchez Esqueda, &#8220;Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling,&#8221; <em>Scientific Reports<\/em>, 2023, <strong>13<\/strong>, 3304. DOI: <a href=\"https:\/\/doi.org\/10.1038\/s41598-023-30317-4\">https:\/\/doi.org\/10.1038\/s41598-023-30317-4<\/a><\/li>\n\n\n\n<li>M. Spear, H. J. Barnaby, T. Wallace, J. Solano, O. Forman, D. Wilson, I. Sanchez Esqueda, A. Privat, M. Turowski, R. Von Niederhausern, M. Marinella, &#8221; Non-linear Coupling Effects in Fully Depleted SOI Transistors,&#8221; <em>IEEE Transactions on Nuclear Science<\/em>, 2023, DOI: <a href=\"https:\/\/doi.org\/10.1109\/TNS.2023.3252439\" target=\"_blank\" rel=\"noreferrer noopener\">10.1109\/TNS.2023.3252439<\/a><\/li>\n\n\n\n<li>Sayyad, M.,&nbsp;Qin, Y.,&nbsp;Kopaczek, J.,&nbsp;Gupta, A.,&nbsp;Patoary, N.,&nbsp;Sinha, S.,&nbsp;Benard, E.,&nbsp;Davis, A.,&nbsp;Yumigeta, K.,&nbsp;Wu, C.-L.,&nbsp;Li, H.,&nbsp;Yang, S.,&nbsp;Esqueda, I. S.,&nbsp;Singh, A.,&nbsp;Tongay, S.,&nbsp;Strain Anisotropy Driven Spontaneous Formation of Nanoscrolls from 2D Janus Layers.&nbsp;<em>Adv. Funct. Mater.<\/em>&nbsp;2023, 2303526.&nbsp;<a href=\"https:\/\/doi.org\/10.1002\/adfm.202303526\">https:\/\/doi.org\/10.1002\/adfm.202303526<\/a><\/li>\n<\/ul>\n\n\n\n<p><strong>2022:&nbsp;<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>T. Wallace, M. Spear, A. Privat, J. Neuendank, G. Irumva, D. Wilson, I. Sanchez Esqueda, H. J. Barnaby, M. Turowski, E. Mikkola, D. Hughart, M. J. Marinella, J. Brunhaver, A. Gutierrez, R. Von Niederhausern, S. Holloway, D. Beltran, J. L. Taggart, &#8220;Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Core Digital Structures,&#8221; IEEE Transactions on Nuclear Science, 2022, DOI: <a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1109\/TNS.2022.3221060\" target=\"_blank\">10.1109\/TNS.2022.3221060<\/a><\/li>\n\n\n\n<li>F. A. Mamun, D. Vasileska and I. Sanchez Esqueda, &#8220;Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures,&#8221; in&nbsp;<em>IEEE Transactions on Electron Devices<\/em>, 2022, <a href=\"http:\/\/doi.org\/10.1109\/TED.2022.3199328\">http:\/\/doi.org\/10.1109\/TED.2022.3199328<\/a><\/li>\n\n\n\n<li>J. Xie, S. Afshari, I. Sanchez Esqueda, &#8220;Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware,&#8221; npj 2D Materials and Applications, 2022, 6, 50, <a href=\"https:\/\/doi.org\/10.1038\/s41699-022-00328-2\">https:\/\/doi.org\/10.1038\/s41699-022-00328-2<\/a> <\/li>\n\n\n\n<li>J. Solano&nbsp;<em>et al<\/em>., &#8220;Total Ionizing Dose Response of Commercial 22nm FD-SOI CMOS Technology,&#8221;&nbsp;<em>2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)<\/em>, Provo, UT, USA, 2022, pp. 1-5, doi: <a href=\"https:\/\/doi.org\/10.1109\/REDW56037.2022.9921673\">https:\/\/doi.org\/10.1109\/REDW56037.2022.9921673<\/a><\/li>\n\n\n\n<li>J. Neuendank&nbsp;<em>et al<\/em>., &#8220;Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits,&#8221;&nbsp;<em>2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC)<\/em>, Provo, UT, USA, 2022, pp. 1-9, doi: <a href=\"http:\/\/10.1109\/REDW56037.2022.9921478\"><\/a><a href=\"https:\/\/doi.org\/10.1109\/REDW56037.2022.9921478\">https:\/\/doi.org\/10.1109\/REDW56037.2022.9921478<\/a><\/li>\n\n\n\n<li>J. Xie, N. M. Patoary, G. Zhou, M. Y. Sayyad, S. Tongay, and I. S. Esqueda,&nbsp;&#8220;Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors,&#8221;&nbsp;<em>Nanotechnology,<\/em>&nbsp;2022,&nbsp;33, 225702. DOI: <a href=\"https:\/\/doi.org\/10.1088\/1361-6528\/ac55d2\">https:\/\/doi.org\/10.1088\/1361-6528\/ac55d2<\/a><\/li>\n\n\n\n<li>S. Afshari, M. Musisi-Nkambwe, and I. S. Esqueda,&nbsp;&#8220;Analyzing the impact of memristor variability on crossbar implementation of regression algorithms with smart weight update pulsing techniques,&#8221;&nbsp;<em>IEEE Transactions on Circuits and Systems I: Regular Papers,<\/em>&nbsp;2022.&nbsp;DOI:&nbsp;<a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1109\/TCSI.2022.3144240\" target=\"_blank\">10.1109\/TCSI.2022.3144240<\/a><\/li>\n\n\n\n<li>G. Zhou, F. Al Mamun, J. Yang-Scharlotta, D. Vasileska, and I. S. Esqueda, &#8220;Cryogenic characterization and analysis of nanoscale SOI FETs using a virtual source model,&#8221; <em>EEE Transactions on Electron Devices,<\/em> vol. 69, no. 3, pp. 1306-1312, 2022. DOI: <a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1109\/TED.2022.3142650\" target=\"_blank\">10.1109\/TED.2022.3142650<\/a><\/li>\n\n\n\n<li>I. P. Livingston, I. S. Esqueda, H. J. Barnaby, &#8220;An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges,&#8221; Solid-State Electronics, vol. 187, 108193, 2022. DOI: <a rel=\"noreferrer noopener\" href=\"https:\/\/doi.org\/10.1016\/j.sse.2021.108193\" target=\"_blank\">https:\/\/doi.org\/10.1016\/j.sse.2021.108193<\/a><\/li>\n<\/ul>\n\n\n\n<p><strong>2021:&nbsp;<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>M. Musisi-Nkambwe, S. Afshari, H. Barnaby, M. Kozicki, and I. Sanchez Esqueda,&nbsp;&#8220;The viability of analog-based accelerators for neuromorphic computing: a survey,&#8221;&nbsp;<em>Neuromorphic Computing and Engineering,<\/em>&nbsp;2021,&nbsp;1, 012001.<\/li>\n<\/ul>\n\n\n\n<p><strong>2020:&nbsp;<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Trivedi, D. B.,&nbsp;Turgut, G.,&nbsp;Qin, Y.,&nbsp;Sayyad, M. Y.,&nbsp;Hajra, D.,&nbsp;Howell, M.,&nbsp;Liu, L.,&nbsp;Yang, S.,&nbsp;Patoary, N. H.,&nbsp;Li, H.,&nbsp;Petri\u0107, M. M.,&nbsp;Meyer, M.,&nbsp;Kremser, M.,&nbsp;Barbone, M.,&nbsp;Soavi, G.,&nbsp;Stier, A. V.,&nbsp;M\u00fcller, K.,&nbsp;Yang, S.,&nbsp;Esqueda, I. S.,&nbsp;Zhuang, H.,&nbsp;Finley, J. J.,&nbsp;Tongay, S.,&nbsp;Room\u2010Temperature Synthesis of 2D Janus Crystals and their Heterostructures.&nbsp;<em>Adv. Mater.<\/em>&nbsp;2020,&nbsp;32, 2006320.<\/li>\n<\/ul>\n\n\n\n<p><strong>2019:&nbsp;<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. P. Livingston,&nbsp;I. S. Esqueda, H. J. Barnaby, &#8220;Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations,&#8221;&nbsp;<em>Solid-State Electronics<\/em>, vol. 160, 107609, 2019.<\/li>\n<\/ul>\n\n\n\n<p><strong>2018:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>X. Yan, H. Wang,&nbsp;I. S. Esqueda, &#8220;Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors,&#8221;&nbsp;<em>Nano Letters<\/em>, vol. 19, no. 1, pp. 482-487, 2018.\u200b<\/li>\n\n\n\n<li>D. Sarkar,&nbsp;I. S. Esqueda, R. Kapadia, \u201cNanowire Field-Effect Transistors,\u201d&nbsp;<em>in Advanced Nanoelectronics: Post-Silicon Materials and Devices<\/em>, John Wiley and Sons, 2018.<\/li>\n\n\n\n<li>I. S. Esqueda, H. Zhao, H. Wang, &#8220;Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses,&#8221;&nbsp;<em>Journal of Applied Physics<\/em>, vol. 124, no. 15, pp. 152133, 2018. (<strong>Featured Article<\/strong>).<\/li>\n\n\n\n<li>X. Yan, H. Wang, H. Barnaby, and&nbsp;I. S. Esqueda, &#8220;Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures,&#8221;&nbsp;<em>IEEE Trans. on Dev. and Mater. Reliab.<\/em>, vol. 13, no. 3, pp. 456-462, 2018.<\/li>\n\n\n\n<li>I. S. Esqueda, X. Yan, C. Rutherglen, A. Kane, T. Cain, P. Marsh, Q. Liu, K. Galatsis, H. Wang, C. Zhou, \u201cAligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic Computing,\u201d&nbsp;<em>ACS Nano<\/em>, vol. 12, no. 7, pp. 7352-7361, 2018.<\/li>\n\n\n\n<li>R. Fang, I. Livingston,&nbsp;I. S. Esqueda, M. Kozicki, H. Barnaby, \u201cBias temperature instability model using dynamic defect potential for predicting CMOS aging,\u201d&nbsp;<em>Journal of Applied Physics<\/em>, vol. 123, no. 22, pp. 225701, 2018.<\/li>\n\n\n\n<li>X. Yan,<strong>&nbsp;<\/strong>I. S. Esqueda, J. Ma, J. Tice, and H. Wang, \u201cHigh breakdown electric field in \u03b2-Ga2O3\/graphene vertical barristor heterostructure,\u201d&nbsp;<em>Appl. Phys. Lett.<\/em>, vol. 112, no. 3, 032101, 2018.&nbsp;<strong>(Editor&#8217;s Pick)<\/strong><\/li>\n<\/ul>\n\n\n\n<p><strong>2017:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. S. Esqueda, H. Tian, X. Yan, H. Wang, \u201cTransport properties and device prospects of ultra-thin black phosphorus on hexagonal boron nitride,\u201d&nbsp;<em>IEEE Trans. Elec. Dev.<\/em>, vol. 64, no. 12, pp. 5163-5171, Dec 2017.<\/li>\n\n\n\n<li>I. S. Esqueda, \u201cConfinement effects on radiation hardness of SOI FinFETs at the scaling limit,\u201d&nbsp;<em>IEEE Electron Device Letters<\/em>, vol. 38, no. 3, pp. 306-309, 2017.<\/li>\n<\/ul>\n\n\n\n<p><strong>2016:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. S. Esqueda&nbsp;and H. J. Barnaby, \u201cSurface-Potential-Based Compact Modeling of BTI,\u201d&nbsp;<em>Proceedings of the IEEE International Reliability Physics Symposium (IRPS)<\/em>, Pasadena, CA, pp. XT-06-1-XT-06-6, April 2016.<\/li>\n<\/ul>\n\n\n\n<p><strong>2015:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. S. Esqueda&nbsp;and C. D. Cress, \u201cModeling Radiation-Induced Scattering in Graphene,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 62, no. 6, pp. 2906-9113, 2015.<\/li>\n\n\n\n<li>P. C. Adell, B. Rax,&nbsp;I. S. Esqueda, and H. J. Barnaby, \u201cHydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 62, no. 6, pp. 2476-2481, 2015.<\/li>\n\n\n\n<li>I. S. Esqueda, H. J. Barnaby, M. P. King, \u201cCompact modeling of total ionizing dose and aging effects in MOS technologies,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 62, no. 4, pp. 1501-1515, 2015.<\/li>\n\n\n\n<li>I. S. Esqueda, C. D. Cress, Y. Cao, Y. Che and C. Zhou, \u201cThe impact of defect scattering on the quasi-Ballistic transport of nanoscale conductors,\u201d&nbsp;<em>Journal of Applied Physics<\/em>, 117, 084319, 2015.<\/li>\n\n\n\n<li>I. S. Esqueda, \u201cThe impact of stress-induced defects on MOS electrostatics and short-channel effects,\u201d&nbsp;<em>Journal of Solid State Electronics<\/em>, 103, pp. 167-172, 2015.<\/li>\n<\/ul>\n\n\n\n<p><strong>2014:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. S. Esqueda, C. D. Cress, Y. Che, Y. Cao and C. Zhou, \u201cCharge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure,\u201d&nbsp;<em>Journal of Applied Physics<\/em>, 115, 054506, 2014.<\/li>\n\n\n\n<li>I. S. Esqueda&nbsp;and H. J. Barnaby, \u201cA defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits,\u201d&nbsp;<em>Journal of Solid State Electronics<\/em>, 91, pp. 81-86, 2014.<\/li>\n\n\n\n<li>Y. Cao, J. Velamala, K. Sutaria, M. Chen, J. Ahlbin,&nbsp;I. S. Esqueda, M. Bajura, M. Fritze, \u201cCross-layer modeling and simulation of circuit reliability,\u201d&nbsp;<em>IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems<\/em>, vol. 33, no. 1, pp. 8-23, 2014.<\/li>\n<\/ul>\n\n\n\n<p><strong>2013:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. S. Esqueda, C. D. Cress, T. J. Anderson, J. R. Ahlbin, M. Bajura, M. Fritze and J. S. Moon, \u201cModeling radiation-induced degradation in top-gated epitaxial graphene field-effect-transistors (FETs),\u201d&nbsp;<em>Electronics<\/em>, no. 2, pp. 234-245, 2013.<\/li>\n\n\n\n<li>I. S. Esqueda&nbsp;and H. J. Barnaby, \u201cDefect-based compact model for circuit reliability simulation in advanced CMOS technologies,\u201d&nbsp;<em>IEEE International Integrated Reliability Workshop (IIRW) Conference Proceedings,&nbsp;<\/em>pp. 45-49, 2013.<\/li>\n\n\n\n<li>M. Mitkova, P. Chen, M. Ailavajhala, D. P. Butt, D. A. Tenne, H. Barnaby,&nbsp;I. S. Esqueda, \u201cGamma ray induced structural effects in bare and Ag doped Ge-S thin films for sensor application,\u201d&nbsp;<em>Journal of Non-Crystalline Solids<\/em>, vol. 377, no. 1, pp. 195-199, 2013.<\/li>\n<\/ul>\n\n\n\n<p><strong>2012:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>P. C. Adell,&nbsp;I. S. Esqueda, H. J. Barnaby, B. Rax and A. H. Johnston, \u201cImpact of Low Temperatures (&lt;125 K) on the Total Ionizing Dose Response and ELDRS in Gated Lateral PNP BJTs,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 59, no. 6, pp. 3081-3086, 2012.<\/li>\n\n\n\n<li>C. D. Cress, J. G. Champlain,&nbsp;I. S. Esqueda, J. T. Robinson, A. L. Friedman and J. J. McMorrow, \u201cTotal ionizing dose induced charge carrier scattering in graphene devices,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 59, no. 6, pp. 3045-3053, 2012.<\/li>\n\n\n\n<li>I. S. Esqueda&nbsp;and H. J. Barnaby, \u201cModeling the Non-Uniform Distribution of Radiation-Induced Interface Traps,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 59, no. 4, pp. 723-727, 2012.<\/li>\n\n\n\n<li>I. S. Esqueda, H. J. Barnaby and P. C. Adell, \u201cModeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 59, no. 4, pp. 701-706, 2012.<\/li>\n\n\n\n<li>I. S. Esqueda, Y. Fu, C. D. Cress, J. Zhang, C. Zhou, J. Ahlbin, M. Bajura, G. Boverman and M. Fritze, \u201cModeling the effect of hysteresis on aligned nanotube FETs exposed to ionizing radiation,\u201d&nbsp;<em>Radiation Effects on Components and Systems (RADECS) Conference Proceedings<\/em>, 2012.<\/li>\n<\/ul>\n\n\n\n<p><strong>2011:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. S. Esqueda, H. J. Barnaby, K. E. Holbert, and Y. Boulghassoul, \u201cModeling Inter-device Leakage in 90 nm Bulk CMOS Devices,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 58, no. 3, pp. 793-799, 2011.<\/li>\n\n\n\n<li>I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, \u201cModeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 58, No. 2, pp. 499-505, 2011.<\/li>\n\n\n\n<li>I. S. Esqueda, H. J. Barnaby, P. C. Adell, B. G. Rax, H. P. Hjalmarson, M. L. McLain and R. L. Pease, \u201cModeling Low Dose Rate Effects in Shallow Trench Isolation Oxides,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 58, no. 6, pp. 2945-2952, 2011.<\/li>\n\n\n\n<li>I. S. Esqueda&nbsp;and H. J. Barnaby, \u201cModeling the non-uniform distribution of radiation-induced interface traps,\u201d&nbsp;<em>Radiation Effects on Components and Systems (RADECS) Conference Proceedings<\/em>, pp. 15-19, 2011.<\/li>\n\n\n\n<li>I. S. Esqueda, H. J. Barnaby and P. C. Adell, \u201cModeling the Effects of Hydrogen on the Mechanisms of Dose Rate Sensitivity,\u201d&nbsp;<em>Radiation Effects on Components and Systems (RADECS) Conference Proceedings<\/em>, pp. 1-6, 2011.<\/li>\n\n\n\n<li>P. Chen, M. Ailavajhala, M. Mitkova, D. Tenne,&nbsp;I. S. Esqueda&nbsp;and H. J. Barnaby, \u201cStructural Study of Ag-Ge-S Solid Electrolyte Glass System for Resistive Radiation Sensing,\u201d&nbsp;<em>IEEE Workshop on Microelectronics and Electron Devices<\/em>, pp. 1-4, 2011.<\/li>\n<\/ul>\n\n\n\n<p><strong>2010:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>G. J. Schlenvogt, H. J. Barnaby,&nbsp;I. S. Esqueda, K. E. Holbert, J. Wilkinson, S. Morrison, L. Tyler, \u201cFailure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol.57, no.6, pp.3609-3614, 2010.<\/li>\n<\/ul>\n\n\n\n<p><strong>2009:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>I. S. Esqueda, H. J. Barnaby, M. L. McLain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf and W. Xiong, \u201cModeling the Radiation Response of Fully-Depleted SOI n-channel MOSFETs,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 56, pp. 2247-2250, 2009.<\/li>\n\n\n\n<li>I. S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, and R. D. Schrimpf, \u201cModeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,\u201d<em>&nbsp;Radiation Effects on Components and Systems (RADECS) Conference Proceedings<\/em>, pp. 2-6, 2009.<\/li>\n\n\n\n<li>H. J. Barnaby, M. L. McLain,&nbsp;I. S. Esqueda, and X. J. Chen, \u201cModeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,\u201d&nbsp;<em>IEEE Trans. Circuits and Systems<\/em>, vol. 56, no. 8 pp. 1870-1882, 2009.<\/li>\n\n\n\n<li>M. L. McLain, H. J. Barnaby,&nbsp;I. S. Esqueda, J. Oder and B. Vermeire, \u201cReliability of High Performance Standard Two-Edge and Radiation Hardened by Design Enclosed Geometry Transistors.\u201d&nbsp;<em>Proceedings of the<\/em>&nbsp;<em>47th&nbsp;IEEE Annual International Reliability Physics Symposium (IRPS)<\/em>, pp. 174-179, 2009.<\/li>\n<\/ul>\n\n\n\n<p><strong>2008:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, P. C. Adell,&nbsp;I. S. Esqueda, M. L. McLain, H. J. Barnaby, S. Cristoloveanu, W. Xiong, \u201cGate-Length and Drain-Bias Dependence of Band-to-Band tunneling induced Drain Leakage in Irradiated Fully Depleted SOI devices,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci<\/em>., vol. 55, pp. 3259-3264, 2008.<\/li>\n\n\n\n<li>H. J. Barnaby, M. L. McLain,&nbsp;I. S. Esqueda, and X. J. Chen, \u201cModeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices,\u201d&nbsp;<em>IEEE Custom Integrated Circuits Conference (CICC)<\/em>, pp. 273 \u2013 280, 2008.<\/li>\n<\/ul>\n\n\n\n<p><strong>&lt; 2008:<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>H. J. Barnaby, M. L. McLain,&nbsp;I. S. Esqueda, \u201cTotal-ionizing-dose effects on isolation oxides in modern CMOS technologies,\u201d&nbsp;<em>Nuclear Instruments and Methods in Physics Research B<\/em>&nbsp;261, pp. 1142\u20131145, 2007.<\/li>\n\n\n\n<li>I. S. Esqueda, H. J. Barnaby, and M. L. Alles, \u201cTwo-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci.<\/em>, vol. 52, pp. 2259-2264, 2005.<\/li>\n\n\n\n<li>M. L. McLain, M. Campola,&nbsp;I. S. Esqueda&nbsp;and H. J. Barnaby, \u201cModeling Dog Bone Gate Geometry n-Channel MOSFETs,\u201d&nbsp;<em>Radiation Effects on Components and Systems (RADECS) Conference Proceedings<\/em>, 2005.<\/li>\n\n\n\n<li>E. H. Minson,&nbsp;I. S. Esqueda, H. J. Barnaby, R. L. Pease, D. G. Platter and G. Dunham, \u201cAssessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides,\u201d&nbsp;<em>IEEE Trans. Nucl. Sci<\/em>., vol. 51, pp. 3723-3729, 2004.<\/li>\n<\/ul>\n\n\n\n<p><\/p>\n","protected":false},"excerpt":{"rendered":"<p class=\"mb-2\">Google Scholar Selected Publications \u2022 On-chip direct synthesis of boron nitride memristorsNature Nanotechnology (2025)https:\/\/doi.org\/10.1038\/s41565-025-01988-z \u2022 Quantum Conductance in Vertical h-BN Memristors with Graphene-Edge ContactsNano Letters (2024)https:\/\/doi.org\/10.1021\/acs.nanolett.3c04057 \u2022 Improvements in 2D p-type WSe\u2082 transistors towards ultimate CMOS scalingScientific Reports (2023)https:\/\/doi.org\/10.1038\/s41598-023-30317-4 \u2022 Aligned Carbon Nanotube Synaptic Transistors for Large-Scale Neuromorphic ComputingACS Nano (2018)https:\/\/doi.org\/10.1021\/acsnano.8b03831 \u2022 h-BN memristor arrays&#8230;<\/p>\n","protected":false},"author":110,"featured_media":0,"parent":0,"menu_order":2,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-100","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/pages\/100","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/users\/110"}],"replies":[{"embeddable":true,"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/comments?post=100"}],"version-history":[{"count":3,"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/pages\/100\/revisions"}],"predecessor-version":[{"id":384,"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/pages\/100\/revisions\/384"}],"wp:attachment":[{"href":"https:\/\/faculty.engineering.asu.edu\/isesqueda\/wp-json\/wp\/v2\/media?parent=100"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}