Publications

Book Chapters and Articles (Invited)

5. H. Fu, K. Fu, D. Wang, D. H. Mudiyanselage, H. D. Ellis, I. Rahaman, C. Chang, S. M. Goodnick, D. J. Smith, R. J. Nemanich, F. A. Ponce, and Y. Zhao, “Selective Area Regrowth and Doping for Vertical GaN Power Devices”, chapter in “Gallium Nitride and Related Materials – Device Processing and Materials Characterization for Power Electronics Applications”, edited by Isik C. Kizilyalli, Jung Han, James S. Speck, and Eric P. Carlson, Springer, (2024).

4. H. Chen, J. Zhou, H. Fu, and Y. Zhao, “Octave-spanning supercontinuum generation in AlN waveguides,” chapter in “Ultrawide Bandgap Semiconductors,” vol. 104, in the Semiconductors and Semimetals series (2021).

3. H. Fu, K. Fu, and Y. Zhao, “Vertical GaN-on-GaN power devices”, chapter in “Wide Bandgap Semiconductor-Based Electronics,” edited by Prof. S. Pearton, and Prof. F. Ren, IOP publishing, (2020).

2. H. Fu, K. Fu, and Y. Zhao, “Better etching enhances selective area doping for vertical GaN power devices,” Compound Semiconductor, vol. 25, no. 8, Dec. 2019.

1. H. Fu and Y. Zhao, “Efficiency droop in InGaN/GaN LEDs”, chapter in “Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications,” edited by Prof. J. J. Huang, Prof. H. C. Kuo, and Prof. S. C. Shen, 2nd edition, Woodhead publishing, (2018).


Journal Publications (Google Scholar) 

110. D. H. Mudiyanselage, B. Da, J. Adivarahan, D. Wang, Z. He, K. Fu, Y. Zhao, and H. Fu, “β-Ga2O3-based heterostructures and heterojunctions for power eectronics: A review of the recent advances,” Electronics 13, 1234 (2024)

109. D. H. Mudiyanselage, D. Wang, Z. He, B. Da, and H. Fu, “High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD,” Appl. Phys. Express 17 014005 (2024).

108. M Nicoletto, A Caria, F Rampazzo, C De Santi, M Buffolo, F Rossi, X. Huang, H. Fu, H. Chen, Y. Zhao, A. Gasparotto, C. Becht, U. T. Schwarz, G. Meneghesso, E. Zanoni, and M. Meneghini, “V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis,” IEEE Trans. Electron Devices 71, 2051 (2024).

107. M. Nicoletto, A. Caria, C. De Santi, M Buffolo, M. Alasio, F. Mercinelli, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “TCAD modeling and simulation of dark current-voltage characteristics in high-periodicity InGaN/GaN multiple-quantum-wells (MQWs) solar cells,” IEEE J. Photovolt. 14, 450 (2024).

106. C. Yang, C. Jiang, W. Niu, D. Hao, H. Huang, H. Fu, J. Miao, X. Liu, X. Zou, F. Shan, and Z. Yang, “Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal-semiconductor contact,” Appl. Phys. Lett. 124, 073504 (2024).
Selected as “Editor’s Picks” in Appl. Phys. Lett.

105. X. Zhu, W. Niu, H. Fu, J. Miao, H. Huang, X. He, X. Liu, X. Zou, F. Shan, and Z. Yang, “Performance-tunable MoS2 homojunction photodiode based on different built-in electric field,” IEEE Trans. Electron Devices 71, 2192 (2024).

104. D. Wang, D. H. Mudiyanselage, Z. He, B. Da, and H. Fu, “Instability of on-resistance in vertical GaN PIN diodes under high-temperature and voltage stress,” IEEE Trans. Electron Devices 71, 1681 (2024).

103. K. Fu, S. Luo, H. Fu, K. Hatch, S. R. Alugubelli, H. Liu, M. Xu, Z. Mei, Z. He, T. Li, J. Zhou, F. A. Ponce, R. Nemanich, and Y. Zhao, “GaN based threshold switching selector devices working at 500°C enabled by interface engineering for harsh environment memory applications”, IEEE Trans. Electron Devices 71, 1641 (2024).

102. D. Wang, D. H. Mudiyanselage, and H. Fu, “Design of kV-class and low RON E-mode β-Ga2O3 current aperture vertical transistors with delta-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructure,” IEEE Trans. Electron Devices 70, 5795 (2023).

101. D. H. Mudiyanselage, R. Mandia, D. Wang, J. Adivarahan, Z. He, K. Fu, Y. Zhao, M. R. McCartney, D. J. Smith, and H. Fu, “Anisotropic electronic properties of NiOx/β-Ga2O3 p-n heterojunctions on (-201), (001), and (010) crystal orientations”, Appl. Phys. Express 16, 094002 (2023).
Selected as “Spotlights 2023” in Appl. Phys. Express

Selected as “Highlights of 2023” in Appl. Phys. Express

100. S. Ghosh, D. H. Mudiyanselage, F. Kargar, Y. Zhao, H. Fu, and A. Balandin, “Temperature dependence of low-frequency noise characteristics of NiOx/β-Ga2O3 p-n heterojunction diodes,” Adv. Electron. Mater. 2300501, (2023)

99. M. Nicoletto, A. Caria, F. Rampazzo, C. De Santi, M. Buffolo, G. Mura, F. Rossi, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “Influence of V-Pits on the turn-on voltage of GaN-based high periodicity multiple quantum well solar cells,” IEEE J. Photovolt. 13, 891 (2023).

98. C. Zhou, W. Niu, L. Li, D. Hao, H. Huang, H. Fu, X. Liu, X. Zou, F. Shan, and Z. Yang, “Surface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging,” Appl. Phys. Lett. 123, 123506 (2023)

97. X. Liu, Z. Wang, H. Huang, C. Liu, W. Niu, Z. Xie, D. Hao, H. Fu, X. Liu, X. Zou, F. Shan, and Z. Yang, “Microneural network system based on MoS2/h-BN/graphene van der Waals heterojunction transistor,” ACS Appl. Nano Mater. 6, 16046 (2023)

96. S. Ghosh, D. H. Mudiyanselage, S. Rumyantsev, Y. Zhao, H. Fu, S. Goodnick, R. Nemanich, and A. A. Balandin, “Low-frequency electronic noise in  β-(AlxGa1−x)2O3 Schottky barrier diodes,” Appl. Phys. Lett. 122, 212109 (2023).

95. F. Angeles, S. Khan, V. Ortiz, M. Xu, S. Luo, D. Mudiyanselage, H. Fu, Y. Zhao, and R. Wilson, “Picosecond magneto-optic thermometry for improved spatiotemporal resolution of nanoscale thermal transport in AlN thin films,” APL Mater. 11, 061127 (2023)

94. A. Caria, C. De Santi, M. Buffalo, M. Nicoletto, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, M. Meneghini, “Degradation of GaN-based multiple quantum wells solar cells under forward bias: investigation based on optical measurements and steady-state photo capacitance”, IEEE Trans. Electron Devices 70, 3624 (2023).

93. C. Leblanc, D. H. Mudiyanselage, S. Song, H. Zhang, A. Davydov, H. Fu, and D. Jariwala, “Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3,” Nanoscale 15, 9964 (2023).

92. T. Chen, J. Zhang, X. Zhang, C. Chen, L. Zhang, Y. Hu, Y. Ma, X. Wei, X. Zhou, W. Tang, A. Yang, B. Li, S. Dai, L. Xu, W. Shi, H. Fu, Y. Fan, Y. Cai, Z. Zeng, K. Zhang, and B. Zhang “Ultrahigh responsivity β-Ga2O3/BP junction field effect phototransistors for UV/IR dual-band detection,” IEEE Sensor J. 23, 15504 (2023).

91. Y. Hu, L. Zhang, T. Chen, Y. Ma, W. Tang, Z. Huang, B. Li, K. Xu, D. H. Mudiyanselage, H. Fu, X. Zhang, Z. Zeng, and B. Zhang, “High performance ε-Ga2O3 solar-blind ultraviolet photodetectors on Si (100) substrate with molybdenum buffer layer,” Vacuum 213, 112130 (2023)

90. D. H. Mudiyanselage, D. Wang, and H. Fu, “Ultrawide bandgap vertical β-(AlxGa1-x)2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates,” J. Vac. Sci. Technol. A 41, 023201 (2023).

89. Z. Wang, G. Yu, X. Yuan, X. Deng, L. Zhang, S. Dai, G. Yang, L. Zhang, R. Ji, X. Kan, X. Zhang, H. Fu, Z. Zeng, R. K.-Y. Wong, Y. Cai, and B. Zhang, “Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature,” Appl. Phys. Lett. 122, 062105 (2023)

88. M. Nicoletto, A. Caria, C. De Santi, M. Buffolo, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “Optically induced degradation due to thermally activated diffusion in GaN-based InGaN/GaN MQW solar cells,” IEEE Trans. Electron Devices 70, 1115 (2023).

87. P. Peri, K. Fu, H. Fu, J. Zhou, Y. Zhao, and D. J. Smith, “Impact of substrate morphology and structural defects in freestanding gallium nitride on the breakdown characteristics of GaN-on-GaN vertical devices,” J. Electron. Mater. 52, 3343 (2023).

86. Y. Zhao, M. Xu, X. Huang, J. Lebeau, T. Li, D. Wang, H. Fu, K. Fu, X. Wang, J. Lin, and H. Jiang, “Toward high efficiency at high temperatures: recent progress and prospects on InGaN-based solar cells,” Mater. Today Energy 31, 101229 (2023).

85. X. Wei, W. Shen, X. Zhou, W. Tang, Y. Ma, T. Chen, D. Wang, H. Fu, X. Zhang, W. Lin, G. Yu, Y. Cai, and B. Zhang, “2.34kV/1.50mohm p-GaN stripe array gated hybrid anode diode with low turn-on voltage,” IEEE Electron Device Lett. 44, 13 (2023).

84. Z. Wang, X. Deng, H. Fu, L. Zhang, G. Yu, K. Xu, F. Yang, Y. Fan, and B. Zhang, “Impact of protective layer structures on high-temperature annealing of GaN,” Phys. Status Solidi A 2200505, (2022)

83. Z. Xing, H. Zhang, Y. Sun, L. Yang, K. Hu, K. Liang, D. Wang, H. Fu, and H. Sun, “Normally-off AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer,” J. Phys. D: Appl. Phys. 56, 025105 (2022).

82. M. Nicoletto, A. Caria, C. De Santi, M. Buffolo, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 num laser excitation,” Microelectron. Reliab. 138, 114727 (2022)

81. K. Fu, C. Yang, J. Zhou, T. H. Yang, J. Montes, H. Fu, and Y. Zhao, “GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment,” Appl. Phys. Lett. 121, 092103 (2022).

80. X. Zhang, X. Duan, W. Niu, X. Liu, X. Zou, H. Huang, D. H. Mudiyanselage, H. Fu, B. Jiang, G. Liu, and Z. Yang, “The mechanism of performance variations in MoS2 vertical Schottky metal-semiconductor photodiode based on thermionic emission theory,” IEEE Trans. Electron Devices 69, 5644 (2022).

79. Y. Ma, T. Chen, X. Zhang, W. Tang, B. Feng, Y. Hu, L. Zhang, X. Zhou, X. Wei, K. Xu, D. Mudiyanselage, H. Fu, and B. Zhang, “High-photoresponsivity self-powered α-,ε-, and β-Ga2O3/p-GaN heterojunction UV photodetectors with an in situ GaON layer by MOCVD,” ACS Appl. Mater. Interfaces 14, 35194 (2022).

78. D. H. Mudiyanselage, D. Wang, Y. Zhao, and H. Fu, “Intersubband Transitions in Nonpolar and Semipolar III-Nitrides: Materials, Devices, and Applications,” J. Appl. Phys. 131, 210901 (2022). [Invited Review]

77. Dawei Wang, Dinusha Herath Mudiyanselage, and H. Fu, “Design space of delta-doped β-(AlxGa1-x)2O3/Ga2O3 high electron mobility transistors,” IEEE Trans. Electron Devices 69, 69 (2022).

76. Dinusha Herath Mudiyanselage, Dawei Wang, and H. Fu, “Wide bandgap vertical β-Ga2O3/GaN heterojunction p-n diodes with mesa edge termination,” IEEE J. Electron Devices Soc. 10, 89 (2022).

75. J. Yin, S. Chen, H. Chen, S. Li, H. Fu, and C. Liu, “ Design space of GaN vertical trench junction barrier Schottky diodes: comprehensive study and analytical modeling,” Electronics 11, 1972 (2022).

74. M. Xu*, D. Wang*, K. Fu*, D. H. Mudiyanselage, H. Fu, and Y. Zhao, “A Review of Ultrawide-Bandgap Materials: Properties, Synthesis, and Devices,” Oxford Open Mater. Sci. 2, itac004 (2022). (*Equal contribution) [Invited Review]

73. A. Carla, M. Nicoletto, C. De Santi, M. Buffolo, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, M. Meneghini, “Quantum efficiency of InGaN-GaN multi-quantum well solar cells: experimental characterization and modeling,” J. Appl. Phys. 131, 224501 (2022).

72. W. Tang, Y. Ma, X. Zhang, X. Zhou, L. Zhang, X. Zhang, T. Chen, X. Wei, X. Lin, D. H. Mudiyanselage, H. Fu, and B. Zhang, “High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant,” Appl. Phys. Lett. 120, 212103 (2022).

71. K. A. Hatch, D. C. Messina, H. Fu, K. Fu, Y. Zhao, and R. J. Nemanich, “External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy,” J. Appl. Phys. 131, 185301 (2022).

70. X. Zhang, X. Wei, P. Zhang, H. Zhang, L. Zhang, X. Deng, Y. Fan, G. Yu, Z. Dong, H. Fu, Y. Cai, K. Fu, and B. Zhang, “Low threshold voltage shift in AlGaN/GaN MIS-HEMTs on Si substrate using SiNx/SiON as composite gate dielectric,” Electronics 11, 895 (2022).

69. X. Zhou, L. Zhang, X. Zhang, Y. Ma, X. Wei, T. Chen, W. Tang, K. Xu, Z. Zeng, X. Zhang, H. Fu, and B. Zhang, “Band alignment of ultrawide bandgap ε-Ga2O3/h-BCN heterojunction epitaxially grown by metalorganic chemical vapor deposition,” Appl. Surf. Sci. 583, 152502 (2022).

68. Y. Ma, X. Zhang, B. Feng, W. Tang, T. Chen, H. Qian, L. Zhang, X. Zhou, X. Wei, K. Xu, H. Fu, and B. Zhang, “Mis-cut direction of substrate effect on the photoresponse characteristic of β-Ga2O3 film,” Vacuum 198, 110886 (2022)

67. H. Fu, K. Fu, C. Yang, H. Liu, K. A. Hatch, P. Peri, D. H. Mudiyanselage, B. Li, T. H. Kim, S. R. Alugubelli, P. Y. Su, D. C. Messina, X. Deng, C. Y. Cheng, R. V. Meidanshahi, X. Huang, H. Chen, T. H. Yang, J. Zhou, A. M. Armstrong, A. A. Allerman, E. T. Yu, J. Han, S. M. Goodnick, D. J. Smith, R. J. Nemanich, F. A. Ponce, and Y. Zhao, “Selective area regrowth and doping for vertical GaN power transistors: challenges and recent progress”, Mater. Today 49, 296 (2021).

66. H. Fu, K. Fu, S. Chowdhury, T. Palacios, and Y. Zhao, “Vertical GaN power devices: Device principles and fabrication technologies-Part II,” IEEE Trans. Electron Devices 68, 3212 (2021).

65. H. Fu, K. Fu, S. Chowdhury, T. Palacios, and Y. Zhao, “Vertical GaN power devices: Device principles and fabrication technologies-Part I,” IEEE Trans. Electron Devices 68, 3200(2021).

Most popular articles in IEEE Trans. Electron Devices in October and November 2022

64. T. Chen, X. Zhang, Y. Ma, T. He, X. Wei, W. Tang, W. Tang, X. Zhou, H. Fu, L. Zhang, K. Xu, C. Zeng, Y. Fan, Y. Cai, and B. Zhang, “Self-powered and spectrally distinctive nanoporous Ga2O3/GaN epitaxial heterojunction UV photodetectors,” Adv. Photonics Res. 2, 2100049 (2021).

63. C. Yang, H. Fu, P. Peri, K. Fu, T. H. Yang, J. Zhou, J. Montes, D. J. Smith, and Y. Zhao, “Enhancement-mode gate-recess-free GaN based p-channel heterojunction field-effect transistor with ultra-low subthreshold swing,” IEEE Electron Device Lett. 42, 1128 (2021).

62. Y. Ma, B. Feng, X. Zhang, T. Chen, W. Tang, L. Zhang, T. He, X. Zhou, X. Wei, H. Fu, K. Xu, S. Ding, and B. Zhang, “High-performance β-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition,” Vacuum 191, 110402 (2021).

61. K. Fu, H. Fu, X. Deng, P. Y. Su, H. Liu, K. Hatch, C. Y. Cheng, D. Messina, R. V. Meidanshahi, P. Peri, C. Yang, T. H. Yang, J. Montes, J. Zhou, X. Qi, S. M. Goodnick, F. A. Ponce, D. J. Smith, R. Nemanich, and Y. Zhao, “The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices,” Appl. Phys. Lett. 118, 222104 (2021).

60. C. Yang, H. Fu, K. Fu, T. H. Yang, J. Zhou, J. Montes, and Y. Zhao, “Low-leakage kV-class GaN vertical p-n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension,” Semicond. Sci. Technol. 36, 075009 (2021).

59. Y. Ma, X. Zhang, J. Li, X. Cao, T. He, L. Zhang, W. Tang, K. Xu, Y. Fan, Y. Cai, H. Fu, and B. Zhang, “Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD,” J. Phys. D: Appl. Phys. 54, 305101 (2021).

58. H. Chen, J. Zhou, D. Li, D. Chen, A. K. Vinod, H. Fu, X. Huang, T. H. Yang, J. A. Montes, K. Fu, C. Yang, C. Z. Ning, C. W. Wong, A. M. Armani, and Y. Zhao, “Supercontinuum generation in high order waveguide mode with near-visible pumping using aluminum nitride waveguides,” ACS Photonics 8, 1344 (2021).

57. Y. Ma, W. Tang, T. Chen, L. Zhang, T. He, X. Zhou, X. Wei, X. Deng, H. Fu, K. Xu, X. Zhang, and B. Zhang, “Effects of off-axis substrate angles on β-Ga2O3 thin films and solar-blind ultraviolet photodetectors grown on sapphire on MOCVD,” Mater. Sci. Semicond. Process. 131, 105856 (2021).

56. P. Peri, K. Fu, H. Fu, Y. Zhao, and D. Smith, “Characterization of as-grown and regrown GaN-on-GaN heterostructures for vertical p-n power devices,” J. Electron. Mater. 50, 2637 (2021).

55. T. H. Yang, J. Brown, K. Fu, J. Zhou, K. Hatch, C. Yang, J. Montes, X. Qi, H. Fu, R. J. Nemanich, and Y. Zhao, “AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using ERC-MPCVD deposited hexagonal boron nitride as gate dielectric,” Appl. Phys. Lett. 118, 072102 (2021)

54. G. Seryogin, F. Alema, N. Valente, H. Fu, E. Steinbrunner, A. T. Neal, S. Mou, A. Fine, and A. Osinsky, “MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor,” Appl. Phys. Lett. 117, 262101 (2020).

Selected as “Editor’s Pick” 

53. K. Fu, X. Qi, H. Fu, P. Y. Su, H. Liu, T. H. Yang, C. Yang, J. Montes, J. Zhou, F. Ponce, and Y. Zhao, “Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices,” Semicond. Sci. Technol. 36, 014005 (2020).

52. A. Caria, C. De Santi, F. Zamperetti, X. Huang, H. Fu, H. Chen, Y. Zhao, A. Neviani, G. Meneghesso, E. Zanoni, and M. Meneghini, “GaN-based high-periodicity multiple quantum well solar cells: degradation under optical and electrical stress,” Microelectron. Reliab. 114, 113802 (2020).

51. J. Montes, C. Kopas, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, H. Fu, and Y. Zhao, “Deep level transient spectroscopy investigation of ultra-wide bandgap (-201) and (001) β-Ga2O3,” J. Appl. Phys. 128, 205701 (2020).

50. P. Peri, K. Fu, H. Fu, Y. Zhao, and D. J. Smith, “Structural breakdown in GaN-on-GaN high power p-n diodes devices stressed to failure,” J. Vac. Sci. Technol. A 38, 063402 (2020).
Featured as “Editor’s Pick” in JVSTA
Selected as “Scilight” in AIP

49. P. Y. Su, H. Liu, C. Yang, K. Fu, H. Fu, Y. Zhao, and F. A. Ponce, “Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films,” Appl. Phys. Lett. 117, 102110 (2020).

48. C. Yang, H. Fu, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Normally-off GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD,” IEEE Trans. Electron Devices, 67, 3972 (2020).

47. T. H. Yang, H. Fu, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Vertical GaN-on-GaN Schottky barrier diodes with multi-floating metal rings,” IEEE J. Electron Devices Soc. 8, 857 (2020).

46. C. Yang, H. Fu, P. Y. Su, H. Liu, K. Fu, X. Huang, T. H. Yang, H. Chen, J. Zhou, X. Deng, J. Montes, X. Qi, F. A. Ponce, and Y. Zhao, “Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment,” Appl. Phys. Lett. 117, 052105 (2020).

45. X. Huang, D. Li, P. Y. Su, H. Fu, H. Chen, C. Yang, J. Zhou, X. Qi, T. H. Yang, J. Montes, X. Deng, K. Fu, S. P. DenBaars, S. Nakamura, F. A. Ponce, C. Z. Ning, and Y. Zhao, “Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures,” Nano Energy 76, 105013 (2020).

44. B. Raghothamachar, Y. Liu, H. Peng, T. Ailihumaer, M. Dudley, F. S. Shahedipour-Sandvik, K. A. Jones, A. Armstrong, A. A. Allerman, J. Han, H. Fu, K. Fu, and Y. Zhao, “X-ray topography characterization of gallium nitride substrates for power device development,” J. Crys. Growth 544, 125709 (2020).

43. K. Song, H. Zhang, H. Fu, C. Yang, R. Singh, Y. Zhao, H. Sun, and S. Long, “Normally-off AlN/β-Ga₂O₃ field-effect transistors using polarization-induced doping,J. Appl. D: Appl. Phys. 53, 345107 (2020).

42. H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Montes, J. Zhou, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “High voltage vertical GaN p-n diodes with hydrogen-plasma based guard rings,” IEEE Electron Device Lett. 41, 127 (2020).

Most popular articles in IEEE Electron Device Lett. in December 2019 and January 2020

41. K. Fu*, H. Fu*, X. Huang, T. H. Yang, C. Y. Cheng, P. R. Peri, H. Chen, J. Montes, C. Yang, J. Zhou, X. Deng X. Qi, D. J. Smith, S. M. Goodnick, and Y. Zhao, “Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes,” J. Electron Devices Soc. 8, 74 (2020). (*Equal contribution)

40.  H. Chen, H. Fu, J. Zhou, X. Huang, T. H. Yang, K. Fu, C. Yang, J. A. Montes, and Y. Zhao, “Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV–visible spectral wavelengths using volume current method,” Opt. Express 27, 17262 (2019).

39. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, M. R. McCartney, and F. A. Ponce, “Determination of electronic band structure by electron holography of of etched-and-regrown interfaces in GaN p-i-n diodes,” Appl. Phys. Lett. 115, 201602 (2019).

38. J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T. H. Yang, J. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-Ga₂O₃ optical waveguides in the UV-NIR spectra,” Appl. Phys. Lett. 115, 251108 (2019).

37. K. Fu*, H. Fu*, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Demonstration of 1.27 kV etch-then-regrow GaN vertical p-n junctions with low leakage for GaN power electronics,” IEEE Electron Device Lett. 40, 1728 (2019). (*Equal contribution)

Most popular articles in IEEE Electron Device Lett. in November 2019

36. H. Fu, K. Fu, H. Liu, S. Alugubelli, X. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, “Implantation- and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing,” Appl. Phys. Express 12, 051015 (2019).

Selected as “Spotlights 2019” in Appl. Phys. Express

35. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce “Dopant profiling in p-i-n GaN structures using secondary electrons,” J. Appl. Phys. 126, 015704 (2019).

34. X. Huang, W. Li, H. Fu, D. Li, C. Zhang, H. Chen, Y. Fang, K. Fu, S. DenBaars, S. Nakamura, S. Goodnick, C. Z. Ning, S. Fan, and Y. Zhao,“High temperature polarization-free III-nitride solar cells with self-cooling effects,” ACS Photonics 6, 2096 (2019).

33. J. Montes, C. Yang, H. Fu, T. H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang, and Y. Zhao, “Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction,” Appl. Phys. Lett. 114, 162103 (2019).

32. K. Fu, H. Fu, X. Huang, T. H. Yang, H. Chen, I. Baranowski, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold switching and memory behavior of epitaxial regrown GaN-on-GaN vertical p-n diodes with high temperature stability,” IEEE Electron Device Lett. 40, 375 (2019).

Highlighted on the Journal Cover of IEEE Electron Device Lett.
Featured by IEEE Spectrum, Compound Semiconductor, etc.
Most popular articles in IEEE Electron Device Lett. in March 2019

31. H. Liu, H. Fu, K. Fu, S. R. Alugubelli, P. Y. Su, Y. Zhao, and F. A. Ponce, “Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics,” Appl. Phys. Lett. 114, 082102 (2019).

30. X. Huang, R. Fang, C. Yang, K. Fu, H. Fu, H. Chen, T. H. Yang, J. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. Zhang, and Y. Zhao, “Steep-slope AlGaN/GaN HEMT with oxide based threshold switching device,” Nanotechnology 30, 215201 (2019).

29. J. Montes, T. H. Yang, H. Fu, H. Chen, X. Huang, K. Fu, I. Baranowski, and Y. Zhao, “Effect of proton radiation on ultra-wide bandgap AlN Schottky barrier diodes,” IEEE Trans. Nucl. Sci. 66, 91 (2019).

28. T. H. Yang, H. Fu, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates and their reverse current leakage mechanisms,” J. Semicond. 40, 012801 (2019). (Invited paper)

27. Y. Zhao, H. Fu, G. T. Wang, and S. Nakamura, “Toward ultimate efficiency: Progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes,” Adv. Opt. Photonics 10, 246 (2018).

Highlighted by ASU News

26. H. Fu, X. Zhang, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, I. Baranowski, T. H. Yang, K. Xu, F. A. Ponce, B. Zhang, and Y. Zhao, “Nonpolar vertical GaN-on-GaN p-n power diodes grown on free-standing (10-10) m-plane GaN substrates by MOCVD,” Appl. Phys. Express 11, 111003 (2018).

25. K. Fu, H. Fu, H. Liu, S. R. Alugubelli, T. H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce, and Y. Zhao, “Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 113, 233502 (2018).

24. H. Fu, K. Fu, X. Huang, H. Chen, I. Baranowski, T. H. Yang, J. Montes, and Y. Zhao, “High performance vertical GaN-on-GaN p-n diodes with hydrogen-plasma based edge termination,” IEEE Electron Device Lett. 39, 1018 (2018).

23. H. Fu, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “A comparative study on the electrical properties of vertical (-201) and (010) β-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates,” IEEE Trans. Electron Devices 65, 3507 (2018).

22. X. Huang, H. Chen, H. Fu, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Cunning, D. D. Koleske, and Y. Zhao, “Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers,” Appl. Phys. Lett. 113, 043501 (2018).

21. Z. Lu, P. Tian, H. Fu, J. Montes, X. Huang, H. Chen, X. Zhang, X. Liu, R. Liu, L. Zheng, X. Zhou, E. Gu, and Y. Zhao, “Experimental demonstration of non-line-of-sight visible light communication using a GaN-based micro-LED and modified IEEE 802.11ac,” AIP Adv. 8, 105017 (2018)

20. H. Chen, H. Fu, X. Huang, J. Montes, I. Baranowski, T. H. Yang, and Y. Zhao, “Characterizations of the nonlinear optical properties for (010) and (-201) beta-phase gallium oxide,” Opt. Express 26, 3938 (2018).

19. H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes,” IEEE Electron Device Lett. 38, 763 (2017).

Featured by Silicon Valley Microelectronics, Semiconductor Today, etc.
Most popular articles in IEEE Electron Device Lett. in April, May, and June 2017

18. H. Fu, I. Baranowski, X. Huang, H. Chen, Z. Lu, J. Montes, X. Zhang and Y. Zhao, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1kV,” IEEE Electron Device Lett. 38, 1286 (2017).

Featured by Silicon Valley Microelectronics, Semiconductor Today, Semiconductor Society (India), University of Strathclyde, etc.
Most popular articles in IEEE Electron Device Lett. in August and September 2017

17. H. Fu, X. Huang, H. Chen, Z. Lu, and Y. Zhao, “Fabrication and characterization of ultra-wide bandgap AlN based Schottky diodes on sapphire by MOCVD,” IEEE J. Electron Devices Soc. 5, 518 (2017).

Most popular articles in IEEE J. Electron Devices Soc. from October 2017 to January 2018

16. H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers,” Appl. Phys. Lett. 111, 152102 (2017).

Featured by Silicon Valley Microelectronics, Semiconductor Today, etc.

15. H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications,” Opt. Express 25, 31758 (2017).

14. X. Huang, H. Fu, H. Chen, Z. Lu, I. Baranowski, J. Montes, T. H. Yang, B. P. Gunning, D. Koleske, and Y. Zhao, “Reliability analysis of InGaN/GaN multi-quantum-well (MQW) solar cells under thermal stress,” Appl. Phys. Lett. 111, 233511 (2017).

13. X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency,” Appl. Phys. Lett. 110, 161105 (2017).

Featured by Semiconductor Today

12. H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-emitting diodes with metallic coating,” IEEE Photonics J. 9, 8200808 (2017).

11. H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well,” J. Appl. Phys. 121, 014501 (2017).

10. H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. A. Montes, and Y. Zhao “Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).

9. Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao, “Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK,” Opt. Express 25, 17971 (2017).

8. H. Y. Huang, Y. Fan, Z. Lu, T. Luo, H. Fu, H. Song, Y. Zhao, and J. B. Christen, “Variable self-powered light detection CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor,” Opt. Express 25, 24138 (2017).

7. H. Fu, Z. Lu, X. Zhao, Y. H. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20-2-1) InGaN light-emitting diodes by time-resolved photoluminescence,” IEEE J. Display Technol. 12, 736 (2016).

6. H. Fu, Z. Lu, X. Huang, H. Chen and Y. Zhao, “Crystal orientation dependent Intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications,” J. Appl. Phys. 119, 174502 (2016).

5. H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect,” AIP Adv. 6, 065013 (2016).

4. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model,” J. Appl. Phys. 119, 213101 (2016).

3. H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating,” Opt. Express 24, A856 (2016).

2. C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier,” Electron. Lett. 51, 1187 (2015).

1. Z. Yu, C. Bu, Z. Zhou, Y. Liu, N. Huang, S. Bai, H. Fu, S. Guo, and X. Zhao, “Effect of HAc treatment on an open-environment prepared organic redox couple based on hydroquinone/benzoquinone and its application in dye-sensitized solar cells,” Electrochimica Acta 107, 695 (2013).


Conference Publications/Presentations (Refereed)

112. D. H. Mudiyanselage, D. Wang, B. Da, Z. He, and H. Fu, “Developing high-voltage AlN Schottky barrier diodes on AlN substrates for power electronic device applications,” 2024 MRS Spring Meeting, Seattle, Washington, April 2024, Oral Presentation.

111. B. Da, D. H. Mudiyanselage, D. Wang, A. Biswas, P. Ajayan, Y. Zhao, and H. Fu, “Vertical β-(AlxGa1−x)2O3 Schottky barrier diodes with a BN interlayer,” 2024 MRS Spring Meeting, Seattle, Washington, April 2024, Oral Presentation.

110. D. Wang, D. H. Mudiyanselage, Z. He, B. Da, and H. Fu, “Lateral p-GaN/AlGaN/GaN Hybrid Anode Diodes (HADs) with Hydrogen Plasma Guard Line Termination,” 2024 MRS Spring Meeting, Seattle, Washington, April 2024, Oral Presentation.

109. B. Da, D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu, “Investigation of temperature-dependent hysteresis and interface trap density in E-beam evaporated NiOx/β-Ga2O3 p-n diodes,” 2024 MRS Spring Meeting, Seattle, Washington, April 2024, Oral Presentation.

108. Z. He, D. Wang, D. H. Mudiyanselage, B. Da, Y. Zhao, and H. Fu, “Microwave-plasma-assisted chemical vapor deposition of BN as gate dielectric for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors,” 2024 MRS Spring Meeting, Seattle, Washington, April 2024, Poster Presentation.

107. S. Ghosh, D. H. Mudiyanselage, F. Kargar, Y. Zhao, H. Fu, S. Goodnick, R. Nemanich, and A. Balandin, “Comparative study of low-frequency noise in diodes made of ultra-wide band semiconductors,” 2024 MRS Spring Meeting, Seattle, Washington, April 2024, Oral Presentation.

106. D. H. Mudiyanselage, D. Wang, Z. He, B. Da, and H. Fu, “Demonstration of 3 kV Schottky barrier diodes on AlN epilayers grown on bulk AlN substrates by MOCVD,” 2023 MRS Fall Meeting, Boston, Massachusetts, November 2023, Oral Presentation. [LATE NEWS]

105. C. Leblanc, D. H. Mudiyanselage, S. Song, H. Zhang, A. Davydov, H. Fu, and D. Jariwala, “Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga2O3,” 2023 MRS Fall Meeting, Boston, Massachusetts, November 2023, Oral Presentation.

104. H. Fu, “Ultrawide bandgap semiconductors for future power electronics,” The 8th International Symposium on Biomedical Engineering and International Workshop on Nanodevice Technologies 2023 (ISBE 2023/IWNT 2023), November 2023, Hiroshima University, Japan, Oral Presentation. [INVITED TALK]

103. D. Smith, P. Peri, S. Vishwakarma, A. Patel, H. Fu, K. Fu, Y. Zhao, and R. Nemanich, “Growth, defects and breakdown in ultrawide-bandgap semiconductors for power electronic devices,” The 20th International Microscopy Congress (IMC20), September 2023, Busan, Korea, Oral Presentation. [INVITED TALK]

102. D. Wang, D. H. Mudiyanselage, and H. Fu, “Modeling of β-(AlxGa1-x)2O3/Ga2O3 high electron mobility transistor (HEMT) and current aperture vertical electron transistor (CAVET),” The 6th U.S. Workshop on Gallium Oxide (GOX 2023), August 2023, Buffalo, New York, Poster Presentation.

101. D. H. Mudiyanselage, D. Wang, and H. Fu, “Anisotropy nature of NiOx/β-Ga2O3 p-n heterojunctions on (-201), (001), and (010) β-Ga2O3 substrates,” The 6th U.S. Workshop on Gallium Oxide (GOX 2023), August 2023, Buffalo, New York, Poster Presentation

100. D. Wang, D. H. Mudiyanselage, Z. He, and H. Fu, “Reliability study and analysis of vertical GaN power devices,” The 65th Electronic Materials Conference (EMC 2023), June 2023, Santa Barbara, California, Oral Presentation. [LATE NEWS]

99. Z. He, D. H. Mudiyanselage, D. Wang, Y. Zhao, and H. Fu, “Effect of impact ionization coefficients on high-voltage vertical AlN power devices,” The 65th Electronic Materials Conference (EMC 2023), June 2023, Santa Barbara, California, Oral Presentation.

98. D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu, “Anisotropic Electronic Properties of NiOx/β-Ga2O3 p-n Heterojunctions on (-201), (001), and (010) β-Ga2O3 Substrates,” The 65th Electronic Materials Conference (EMC 2023), June 2023, Santa Barbara, California, Oral Presentation.

97. D. Wang, D. H. Mudiyanselage, Z. He, and H. Fu, “Design and fabrication of AlGaN/GaN multiple p-channel Schottky barrier diodes,” The 65th Electronic Materials Conference (EMC 2023), June 2023, Santa Barbara, California, Oral Presentation.

96. A. Caria, C. De Santi, M. Nicoletto, M. Buffolo, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress,” SPIE OPTO 2023, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210D (2023).

95. M. Nicoletto, A. Caria, C. De Santi, M. Buffolo, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion,” SPIE OPTO 2023, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 1242106 (2023).

94. D. H. Mudiyanselage, D. Wang, Z. He, and H. Fu, “Comparative study of NiOx/β-Ga2O3 p-n heterojunctions on (-201) and (001) free-standing β-Ga2O3 substrates,” 2023 MRS Spring Meeting, San Francisco, April 2023, Poster Presentation.

93. D. Wang, D. H. Mudiyanselage, and H. Fu, “Design and fabrication of AlGaN/GaN multiple p-channel Schottky barrier diodes,” 2023 MRS Spring Meeting, San Francisco, April 2023, Oral Presentation.

92. Z. He, K. Fu, M. Xu. J. Zhou, T. Li, Y. Zhao, and H. Fu, “Ultrawide bandgap BN based vertical power diodes via TCAD simulation,” 2023 MRS Spring Meeting, San Francisco, April 2023, Poster Presentation.

91. D. Wang, D. H. Mudiyanselage, and H. Fu, “Comprehensive design and simulation of E-mode β-Ga2O3 current-aperture vertical electron transistors,” 2022 MRS Spring Meeting, Honolulu, Hawai’i, May 2022, Oral Presentation.

90. D. H. Mudiyanselage, D. Wang, and H. Fu, “Ultrawide bandgap β-Ga2O3/p-GaN heterojunction barrier Schottky rectifiers for efficient power electronic applications,” 2022 MRS Spring Meeting, Honolulu, Hawai’i, May 2022, Oral Presentation.

89. D. H. Mudiyanselage, D. Wang, and H. Fu, “Ultrawide Bandgap Vertical β-(AlxGa1-x)2O3 Schottky Barrier Diodes on Free-Standing Ga2O3 Substrates,” 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022), June 2022, Anna Arbor, Michigan, Oral Presentation. [LATE NEWS]

88. K. Fu, T. H. Yang, J. Brown, J. Zhou, K. Hatch, C. Yang, J. Montes, X. Qi, H. Fu, R. J. Nemanich, and Y. Zhao, “AlGaN/GaN MISHEMTs with BN as gate dielectric deposited by ECR-MPCVD,” 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022), June 2022, Anna Arbor, Michigan, Poster Presentation.

87. D. Wang, D. H. Mudiyanselage, and H. Fu, “High-voltage kilovolt enhancement-mode β-Ga2O3 current-aperture vertical electron transistors with recessed-gate design,” 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022), June 2022, Anna Arbor, Michigan, Poster Presentation.

86. D. H. Mudiyanselage, D. Wang, and H. Fu, “Design and analysis of kV-class ultrawide bandgap β-Ga2O3/p-GaN heterojunction barrier Schottky diodes,” 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022), June 2022, Anna Arbor, Michigan, Poster Presentation.

85. A. Caria, C. De Santi, M. Nicoletto, M. Buffolo, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress,” SPIE OPTO 2022, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 12001, Gallium Nitride Materials and Devices XVII, 1200107 (2022).

84. H. Fu, “Recent progress on anisotropic electrical and optical studies in ultrawide bandgap β-Ga2O3 electronics and photonics,” 240th ECS Meeting, October 2021, Orlando, Florida, Oral Presentation. [Invited talk]

83. P. R. Peri, K. Fu, H. Fu, Y. Zhao, and D. J. Smith, “Effect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes,” Microscopy and Microanalysis 27, Supplement S1, 1760 (2021). DOI: 10.1017/S1431927621006449

82. D. H. Mudiyanselage and H. Fu, “Wide bandgap beta-Ga2O3/GaN heterojunction based vertical p-n diode with mesa edge termination,” 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021), May 2021, Stockholm, Sweden, Oral Presentation.

81. D. Wang and H. Fu, “Modulation-doped beta-(AlxGa1-x)2O3/Ga2O3 HEMTs: Design principles and performance optimization via TCAD,” 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021), May 2021, Stockholm, Sweden, Poster Presentation.

80. C. Yang, H. Fu, K. Fu, T. H. Yang, J. Zhou, J. Montes, and Y. Zhao, “Gate-recess-free GaN-based p-channel HFETs with ultra-low off-state leakage and subthreshold swing towards GaN CMOS technology,” 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021), May 2021, Stockholm, Sweden, Oral Presentation.

79. K. Fu, C. Yang, J. Zhou, T. H. Yang, J. Montes, H. Fu, and Y. Zhao, “GaN vertical p-n diodes with avalanche capability through hydrogen plasma based edge termination,” 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021), May 2021, Stockholm, Sweden, Oral Presentation.

78. J. Montes, C. Kopas, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, H. Fu, and Y. Zhao, “Deep level transient spectroscopy investigation of ultra-wide bandgap (-201) and (001) β-Ga2O3,” 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021), May 2021, Stockholm, Sweden, Oral Presentation.

77. J. Zhou, H. Chen, X. Qi, C. Yang, J. A. Montes, K. Fu, T. H. Yang, H. Fu, X. Deng, X. Huang, and Y. Zhao, “Characterizations of two-photon absorption and Kerr nonlinear optical properties for aluminum nitride using Z-scan method,” 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021), May 2021, Stockholm, Sweden, Poster Presentation.

76. D. H. Mudiyanselage and H. Fu, “Vertical Wide Bandgap β-Ga2O3/GaN p-n Heterojunction with Mesa Based Edge Termination,” The 63rd Electronic Materials Conference (EMC 2021), June 2021, Oral Presentation.

75. D. Wang and H. Fu, “Modulation-doped β-(AlxGa1-x)2O3/Ga2O3 HEMTs: Design Principles and Performance Optimization via TCAD,” The 63rd Electronic Materials Conference (EMC 2021), June 2021, Oral Presentation.

74. D. H. Mudiyanselage and H. Fu, Mesa edge terminated wide bandgap ß-Ga2O3/GaN heterojunction based vertical p-n diode,” 2021 MRS Spring Meeting, April 2021, Poster Presentation. [LATE NEWS]

73. D. Wang and H. Fu, “Design and Optimization of β-(AlxGa1-x)2O3/Ga2O3 Delta-Doped High Electron Mobility Transistors,” 2021 MRS Spring Meeting, April 2021, Poster Presentation.

72. A. Caria, C. De Santi, F. Zamperetti, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, M.Meneghini, “GaN-based high-periodicity multiple quantum well solar cells: degradation under optical and electrical stress,” The 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2020), Oct 2020, Athens, Greece, Oral Presentation.

71. H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “Novel hydrogen-plasma based guard rings for high-voltage vertical GaN-on-GaN p-n diodes,” The 62nd Electronic Materials Conference (EMC 2020), June 2020, Columbus, OH, Oral Presentation.

70. J. Montes, H. Fu, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Examining deep-level defects in (-201) β-Ga2O3 by deep level transient spectroscopy,” The 62nd Electronic Materials Conference (EMC 2020), June 2020, Columbus, OH, Oral Presentation.

69. K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics,” The 62nd Electronic Materials Conference (EMC 2020), June 2020, Columbus, OH, Oral Presentation.

68. T. H. Yang, H. Fu, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, and Y. Zhao, “The investigation of vertical GaN Schottky barrier diode with floating metal guard rings,” The 62nd Electronic Materials Conference (EMC 2020), June 2020, Columbus, OH, Oral Presentation.

67. X. Huang, D. Li, P. Su, H. Fu, H. Chen, K. Fu, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, “Carrier localization and dynamics of nonpolar m-plane InGaN/GaN MQWs at elevated temperatures,” The 62nd Electronic Materials Conference (EMC 2020), June 2020, Columbus, OH, Oral Presentation.

66. H. Fu, K. Fu, C. Yang, H. Liu, K. A. Hatch, S. R. Alugubelli, P. Y. Su, D. C. Messina, X. Deng, B. Li, P. R. Peri, C. Y. Cheng, X. Huang, H. Chen, D. J. Smith, S. M. Goodnick, E. T. Yu, J. Han, R. J. Nemanich, F. A. Ponce, and Y. Zhao, “Recent progress on selective area regrowth and doping for vertical GaN power transistors,” 2020 Compound Semiconductor Week (CSW 2020) and the 47th International Symposium on Compound Semiconductors (ISCS 2020), May 2020, Stockholm, Sweden, Oral Presentation (CANCELED due to COVID-19).

65. J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-Ga2O3 optical waveguides in the UV-NIR spectra,” 2020 Conference on Lasers and Electro-Optics (2020 CLEO), May 2020, San Jose, CA, Poster Presentation.

64. H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “KV-class GaN power p-n diodes with plasma-based guard rings,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).

63. C. Yang, H. Fu, V. N. Kumar, K. Fu, H. Liu, X. Huang, J. Montes, T. H. Yang, H. Chen, J. Zhou, X. Deng, F. A. Ponce, D. Vasileska, and Y. Zhao, “Normally-off GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).

62. J. Montes, H. Fu, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Examining deep-level defects in (-201) β-Ga2O3 by deep level transient spectroscopy,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).

61. J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-Ga2O3 optical waveguides in the UV–visible spectra,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation (CANCELED due to COVID-19).

60. K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Etch-then-regrow vertical GaN p-n diodes with high breakdown voltage and low leakage current,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Poster Presentation (CANCELED due to COVID-19).

59. X. Huang, D. Li, H. Fu, P. Su, H. Chen, K. Fu, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, “High temperatures carrier dynamics of nonpolar InGaN/GaN MQWs,” 2020 MRS Spring Meeting, Apr. 2020, Phoenix, AZ, Poster Presentation (CANCELED due to COVID-19).

58. H. Fu, K. Fu, and Y. Zhao, “Selective area regrowth and doping for vertical GaN power transistors: challenges and progress,” 2020 Lawrence Symposium on Epitaxy, Feb. 2020, Scottsdale, AZ, Oral Presentation. [Invited talk]

57. A. Caria, C. D. Santi, F. Zamperetti, X. Huang, H. Fu, H. Chen, Y. Zhao, G. Meneghesso, E. Zanoni, and M. Meneghini, “Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition,” SPIE. Photonics West, OPTO 2020, Feb. 2020, San Francisco, CA, Oral Presentation. Published in Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800E (2020).

56. X. Huang, H. Fu, and Y. Zhao, “High performance nonplar m-plane InGan multiple-quantum-well solar cells with improved carrier collection and high temperature spectral response,” 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (InterPACK 2019), Oct. 2019, Anaheim, CA, Oral Presentation.

55. P. Peri, K. Fu, H. Fu, Y. Zhao, and D. J. Smith, “Characterization of etched and regrown GaN-on-GaN Schottky diodes,” Microscopy & Microanalysis 2019 Meeting, Aug. 2019, Portland, OR, Poster Presentation.

54. H. Fu, K. Fu, H. Liu, S. Reddy, F. Ponce, and Y. Zhao, “Effective selective area doping for GaN vertical power transistors enabled by epitaxial regrowth,” 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19), Jul. 2019, Keystone, CO, Oral Presentation.

53. K. A. Hatch, D. Messina, H. Fu, K. Fu, X. Wang, M. Hao, Y. Zhao, and R. J. Nemanich, “ALE of GaN (0001) for removal of etch-induced damage,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Poster Presentation.

52. H. Fu, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, “High voltage implantation-free vertical GaN power p-n diodes with a novel low-temperature plasma-based planar edge termination,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

51. H. Chen, H. Fu, X. Huang, J. Zhou, T. H. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Supercontinuum generation from dispersion engineered AlN waveguide arrays,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

50. K. Fu, H. Fu, X. Huang, T. H. Yang, H. Chen, J. Montes, C. Yang, J. Zhou, and Y. Zhao. “Threshold switching and memory behaviors of GaN-on-GaN regrown vertical p-n diodes with high temperature stability,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

49. C. Yang, J. Montes, H. Fu, T. H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang, and Y. Zhao, “Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

48. H. Chen, J. Zhou, T. H. Yang, H. Fu, J. Montes, X. Huang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Study of optical scattering loss induced by crystalline defects inside AlN waveguides using volume current method,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

47. X. Huang, D. Li, H. Fu, H. Chen, K. Fu, C. Yang, T. H. Yang, J. Zhou, J. Montes, S. P. DenBaars, S. Nakamura, C. Z. Ning, and Y. Zhao, “High temperatures carrier dynamics of nonpolar and polar InGaN/GaN MQWs,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

46. J. Montes, H. Fu, T. H. Yang, H. Chen, X. Huang, K. Fu, I. Baranowski, and Y. Zhao, “Effects of 3 MeV proton radiation on ultrawide bandgap aluminum nitride Schottky barrier diodes,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Poster Presentation.

45. X. Huang, R. Fang, C. Yang, K. Fu, H. Fu, H. Chen, T. H. Yang, J. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. Zhang, and Y. Zhao, “Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide based threshold switching device,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Poster Presentation.

44. H. Liu, S. R. Alugubelli, P. Y. Su, H. Fu, K. Fu, Y. Zhao, and F. A. Ponce, “Nonuniform Mg doping in GaN epilayers grown on mesa structures,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

43. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Dopant profiling in p-i-n GaN high power devices using secondary electrons,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Oral Presentation.

42. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Electronic band structure of etch-and-regrowth interface in p-i-n GaN films using electron holography,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul. 2019, Bellevue, WA, Poster Presentation.

41. H. Chen, J. Zhou, H. Fu, X. Huang, T. H. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Supercontinuum generation from dispersion engineered AlN nanophotonics waveguide arrays,” 2019 Conference on Lasers and Electro-Optics (2019 CLEO), May 2019, San Jose, CA, Oral Presentation. DOI: 10.1364/CLEO_SI.2019.SW4H.5

40. H. Chen, J. Zhou, H. Fu, X. Huang, and Y. Zhao, “Study of Crystalline defect induced optical scattering loss inside AlN waveguides in UV-Visible spectral wavelengths,” 2019 Conference on Lasers and Electro-Optics (2019 CLEO), May 2019, San Jose, CA, Poster Presentation. DOI: 10.1364/CLEO_AT.2019.JTh2A.66

39. K. Fu, H. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhaou, F. A. Ponce, and Y. Zhao, “1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering,” 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019), May 2019, Nara, Japan, Oral Presentation (Late News). DOI: 10.1109/ICIPRM.2019.8819081

38. K. Fu, H. Fu, X. Huang, T. H. Yang, H. Chen, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold and resistive switching behaviors in epitaxially regrown GaN P-N diodes for high temperature applications,” 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019), May 2019, Nara, Japan, Poster Presentation. DOI: 10.1109/ICIPRM.2019.8819097

37. H. Fu, K. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Observation of threshold and resistive switching behaviors in epitaxially regrown GaN p-n diodes by MOCVD,” 2019 MRS Spring Meeting, Apr. 2019, Phoenix, AZ, Poster Presentation (Late News).

36. K. Fu, H. Fu, H. Liu, S. R. Alugubelli, T. H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce, and Y. Zhao, “Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition,” 2019 MRS Spring Meeting, Apr. 2019, Phoenix, AZ, Oral Presentation.

35. T. H. Yang, H. Fu, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “The study on inhomogeneity of Ga2O3 Schottky barrier diodes by modified thermionic emission model,” 2019 MRS Spring Meeting, Apr. 2019, Phoenix, AZ, Oral Presentation.

34. H. Liu, H. Fu, K. Fu, S. R. Alugubelli, P.-Y. Su, Y. Zhao, and F. A. Ponce, “Non-uniform Mg doping in GaN epilayers on mesa structures,” 2019 MRS Spring Meeting, Apr. 2019, Phoenix, AZ, Poster Presentation.

33. S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Dopant profiling using low-voltage SEM for GaN power electronics,” 2019 MRS Spring Meeting, Apr. 2019, Phoenix, AZ, Poster Presentation.

32. K. A. Hatch, K. Fu, H. Fu, J. Brown, D. C. Messina, X. Wang, M. Hao, Y. Zhao, and R. J. Nemanich, “Atomic layer etching for selective area doping of GaN,” 2018 MRS Fall Meeting, Nov. 2018, Boston, MA, Poster Presentation.

31. Y. Zhao, J. Montes, H. Fu, K. Fu, X. Huang, H. Chen, T. H. Yang, and I. Baranowski, “Progress on radiation effects in ultra-wide bandgap AlN Schottky barrier diodes,” 2018 IEEE Nuclear and Space Radiation Effects Conference (IEEE NSREC 2018), Jul. 2018, Kona, HI, Poster Presentation (Late News).

30. H. Fu, X. Huang, H. Chen, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “1-kV-class AlN Schottky barrier diodes on sapphire substrates,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

29. T. H. Yang, H. Fu, X. Huang, H. Chen, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “Temperature-dependent electrical properties of beta-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates and their reverse current leakage mechanisms,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

28. J. Montes, H. Fu, T. H. Yang, H. Chen, X. Huang, I. Baranowski, K.Fu, and Y. Zhao, “Gamma-ray and proton radiation effects in AlN Schottky barrier diodes,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

27. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, “Band engineering of InGaN/GaN multiple-quantum-well (MQW) solar cells,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

26. H. Fu, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “Anisotropic electrical properties of vertical β-Ga2O3 Schottky barrier diodes on single-crystal substrates,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

25. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, “Thermal reliability analysis of InGaN MQW solar cells,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

24. I. Baranowski, H. Chen, H. Fu, J. Montes, K. Fu, T. H. Yang, X. Huang, and Y. Zhao, “Thermal performance of silicon dioxide conduction blocking layers in GaN VHEMT devices,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

23. H. Fu, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “Effect of crystalline anisotropy on (-201) and (010) β-Ga2O3 Schottky barrier diodes fabricated on single-crystal substrates,” 2018 MRS Spring Meeting, Apr. 2018, Phoenix, AZ, Oral Presentation.

22. H. Chen, H. Fu, X. Huang, and Y. Zhao, “Loss mechanism study and fabrication of III-N photonic waveguide for integrated photonics applications at visible spectral wavelength,” 2018 MRS Spring Meeting, Apr. 2018, Phoenix, AZ, Oral Presentation.

21. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, B. P. Gunning, D. Koleske, and Y. Zhao, “Thermal reliability analysis of InGaN solar cells,” 2018 MRS Spring Meeting, Apr. 2018, Phoenix, AZ, Oral Presentation.

20. J. Montes, H. Fu, H. Chen, X. Huang, T. H. Yang, I. Baranowski, and Y. Zhao, “Radiation effects in ultra-wide bandgap AlN Schottky barrier diodes,” 2018 MRS Spring Meeting, Apr. 2018, Phoenix, AZ, Oral Presentation.

19. I. Baranowski, H. Fu, H. Chen, X. Huang, T. H. Yang, J. Montes, and Y. Zhao, “Thermal TCAD simulations of silicon dioxide conduction blocking layers in GaN vertical high electron mobility transistors,” 2018 MRS Spring Meeting, Apr. 2018, Phoenix, AZ, Poster Presentation.

18. Y. Zhao, X. Huang, H. Fu, H. Chen, Z. Lu, J. Montes, and I. Baranowski, “InGaN-based solar cells for space applications,” 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), Aug. 2017, Boston, MA, Oral Presentation. DOI: 10.1109/MWSCAS.2017.8053083

17. X. Huang, H. Fu, H. Chen, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Outstanding high temperature performance of nonpolar and semipolar InGaN solar cells,” The 59th Electronic Materials Conference (EMC 2017), Jun. 2017, South Bend, IN, Oral Presentation.

16. H. Chen, X. Huang, H. Fu, Z. Lu, J. Montes, and Y. Zhao, “Characterizations of Kerr refractive index and nonlinear absorption on GaN crystals in polar, nonpolar and semipolar orientations,” The 59th Electronic Materials Conference (EMC 2017), Jun. 2017, South Bend, IN, Oral Presentation.

15. H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Analysis of reversed breakdown and leakage mechanisms of AlN Schottky diodes operating at elevated temperature,” 2017 MRS Spring Meeting, Apr. 2017, Phoenix, AZ, Oral Presentation.

14. X. Huang, H. Fu, H. Chen, Z. Lu, X. Zhang, M. Iza, S. DenBaars, S. Nakamura, and Y. Zhao, “Demonstration of Nonpolar and semipolar InGaN/GaN multi-quantum well (MQW) solar cells,” 2017 MRS Spring Meeting, Apr. 2017, Phoenix, AZ, Oral Presentation.

13. H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN quantum well for optoelectronic applications,” 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct. 2016, Orlando, FL, Oral Presentation.

12. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Fabrication and characterization of nonpolar and semipolar InGaN/GaN multi-quantum well (MQW) solar cells,” 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct. 2016, Orlando, FL, Oral Presentation (Late News).

11. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Theoretical study on efficiency limits and loss analysis for single-junction InGaN solar cells using a semi-analytical model,” 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct. 2016, Orlando, FL, Oral Presentation.

10. H. Fu, X. Huang, H. Chen, Z. Lu, and Y. Zhao, “On the reverse breakdown and leakage mechanisms of AlN Schottky diodes at high temperature,” 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct. 2016, Orlando, FL, Poster Presentation (Late News).

9. Z. Lu, P. Tian, H. Fu, X. Huang, H. Chen, X. Liu, R. Liu, and Y. Zhao, “The effect of reflection on visible light communication system using a gallium nitride uLED and IEEE 802.11ac,” 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct. 2016, Orlando, FL, Poster Presentation.

8. H. Chen, H. Fu, X. Huang, Z. Lu, and Y. Zhao, “Polarization-dependent emission properties of InGaN light-emitting diodes modified by metallic grating,” 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, FL, Poster Presentation.

7. H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Terahertz intersubband transition in semipolar AlGaN/GaN quantum wells for optoelectronic applications,” The 58th Electronic Materials Conference (EMC 2016), Jun. 2016, Newark, DE, Oral Presentation.

6. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Analysis of loss mechanisms in single-junction InGaN solar cells using a semi-analytical model,” The 58th Electronic Materials Conference (EMC 2016), Jun. 2016, Newark, DE, Oral Presentation.

5. H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical propeoerties of highly polarized InGaN light-emiting diodes coated with silver grating,” The 58th Electronic Materials Conference (EMC 2016), Jun. 2016, Newark, DE, Oral Presentation.

4. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Device Simulation and loss analysis for single-junction InGaN solar cells using a semi-analytical model,” The 43rd IEEE Photovoltaic Specialists Conference (PVSC 2016), Jun. 2016, Portland, OR, Poster Presentation.

3. Z. Lu, H. Wang, S. R. Naqvi, H. Fu, Y. Zhao, H. Song, J. B. Christen, “A point of care electrochemical impedance spectroscopy device,” 2015 28th IEEE International System-on-Chip Conference (SOCC), Sept. 2015, Beijing, China, Oral Presentation.

2. H. Fu, Z. Lu, and Y. Zhao, “The modeling of low-droop semipolar InGaN light emitting diodes with weak phase-space filling effect,” 2015 Compound Semiconductor Week (CSW 2015) and the 42nd International Symposium on Compound Semiconductors (ISCS 2015), Jun. 2015, Santa Barbara, CA, Oral Presentation.

1. Z. Lu, H. Fu, H. Song, and Y. Zhao, “A CMOS sun tracker for an application of CPV,” 2015 Compound Semiconductor Week (CSW 2015) and the 42nd International Symposium on Compound Semiconductors (ISCS 2015), Jun. 2015, Santa Barbara, CA, Poster Presentation.