Houqiang Fu Lab
WBG/UWBG Semiconductors and Devices Group
We are the WBG/UWBG Semiconductors and Devices Group led by Dr. Houqiang Fu in the School of Electrical, Computer and Energy Engineering at ASU.
Our research explores novel materials and develops next-generation electronic and photonic/optoelectronic devices and systems to address critical societal needs in Energy Efficiency, Computing, Communication, and Sensing, which are at the interdisciplinary intersection of electrical engineering, materials science, photonics, and physics. We are currently working on exciting third-generation semiconductors, i.e., wide/ultrawide bandgap (WBG/UWBG) semiconductors such as GaN, gallium oxide, AlN, and BN.
Our current research focuses on wide bandgap semiconductor (i.e., GaN and nitride alloys, Ga2O3 and oxide alloys, AlN, and BN) materials, devices and systems for applications in electronics (e.g., power electronics and ICs, WBG CMOS and RRAM computing, RF/microwave devices and MMICs, sensors) and photonics (e.g., optoelectronics, waveguides, nonlinear optics, quantum photonics). More details can be found in our Research and Publications.
Recent News
3/2025— Dinusha won the 2025 Palais Outstanding Doctoral Award due to his extraordinary record of accomplishments! This is the highest honor for the ECEE PhD students and awarded to only one student each year.
2/2025— Timothy was selected for the TSMC Award under the FURI. Congratulations!
1/2025— Dinusha won the top honor of ECEE Graduate Research Day Award! Congratulations!
1/2025— Dinusha’s work on studying the high-temperature characteristics of AlN diodes was accepted to IEEE TED. Congratulations!
1/2025— Our work on 2kV AlN MESFETs on AlN substrates has been featured by Compound Semiconductor and Semiconductor Today.
11/2024— Bingcheng’s work on high-voltage AlN MESFETs on AlN substrates has been published in Applied Physics Express. Congratulations!
10/2024— Our work on 600V AlN Schottky barrier diodes with low ideality factor has been featured by Compound Semiconductor.
07/2024— Ziyi’s paper on GaN HEMTs with low-T CVD BN gate dielectric has been published in Applied Physics Letters. Congratulations.
07/2024— Dinusha’s paper on AlN power diodes with ultra-low ideality factors has been published in Applied Physics Express. Congratulations!
04/2024—Dinusha and Bingcheng’s review paper on Ga2O3 heterostructures and heterojunctions was published in Electronics. Congratulations!
04/2024— Dinusha’s paper was selected as “Highlights of 2023” in Applied Physics Express. Congratulations.
03/2024— Our work on high-voltage AlN Schottky barrier diodes has been featured by Compound Semiconductor.
02/2024— Dr. Fu has been selected for the NSF CAREER Award to develop high-performance UWBG power devices.