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Houqiang Fu Lab

WBG/UWBG Semiconductors and Devices Group

We are the WBG/UWBG Semiconductors and Devices Group led by Dr. Houqiang Fu in the School of Electrical, Computer and Energy Engineering at ASU.

Our research explores novel materials and develops next-generation electronic and photonic/optoelectronic devices and systems to address critical societal needs in Energy Efficiency, Computing, Communication, and Sensing, which are at the interdisciplinary intersection of electrical engineering, materials science, photonics, and physics.  We are currently working on exciting third-generation semiconductors, i.e., wide/ultrawide bandgap (WBG/UWBG) semiconductors such as GaN, gallium oxide, AlN, and BN.

Our current research focuses on wide bandgap semiconductor (i.e., GaN and nitride alloys, Ga2O3 and oxide alloys, AlN, and BN) materials, devices and systems for applications in electronics (e.g., power electronics and ICs, WBG CMOS and RRAM computing, RF/microwave devices and MMICs, sensors) and photonics (e.g., optoelectronics, waveguides, nonlinear optics, quantum photonics). More details can be found in our Research and Publications.

Recent News

4/2026— Bingcheng won the prestigious ASU Outstanding Research Award due to his research accomplishments, impacts, and innovation! Big congrats!

 

3/2026— Bingcheng’s work on high-current-density AlN quasi-vertical diodes has been published in APL Electronic Devices! Congratulations!

 

12/2025— Junzhe’s first paper on lateral AlN SBDs has been published in PSSA! Congratulations!

 

12/2025— Bingcheng’s work on AlN trench MESFETs has been published in APL! Congratulations!

 

8/2025— Bingcheng’s work on AlN MOSFETs has been published in IEEE TMAT! Congratulations!

 

8/2025— Dinusha joined Texas State University as an Assistant Professor, and Ziyi joined Diamond Foundry as a senior device engineer. Big congrats to both of you, and best wishes for your future career!

 

4/2025— Five abstracts were accepted to DRC/EMC 2025 for oral presentations! Congratulations!

 

4/2025— Dawei’s work on 10kV AlGaN/GaN heterojunction diodes has been published in IEEE EDL! Congratulations!

 

4/2025— Dinusha’s work on high-temperature performance of AlN SBD has been published on IEEE TED! Congratulations!

 

4/2025— Jayashree was selected for the prestigious NSF Graduate Research Fellowship Program (GRFP) that supports outstanding graduate students in STEM. Congratulations!

 

3/2025— Dinusha won the 2025 Palais Outstanding Doctoral Award due to his extraordinary record of accomplishments! This is the highest honor for the ECEE PhD students and awarded to only one student each year.

 

2/2025— Timothy was selected for the TSMC Award under the FURI. Congratulations!

 

1/2025— Dinusha won the top honor of ECEE Graduate Research Day Award! Congratulations!

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