Houqiang Fu Lab
Semiconductor Materials and Devices Group
We are the Semiconductor Materials and Devices Group led by Dr. Houqiang Fu in the School of Electrical, Computer and Energy Engineering at ASU.
Our research explores novel materials and develops next-generation electronic and photonic/optoelectronic devices and systems to address critical societal needs in Energy Efficiency, Computing, Communication, and Sensing, which are at the interdisciplinary intersection of electrical engineering, materials science, photonics, and physics. We are currently working on exciting third-generation semiconductors, i.e., wide/ultrawide bandgap (WBG/UWBG) semiconductors such as GaN, gallium oxide, AlN, and BN.
Our current research focuses on wide bandgap semiconductor (i.e., GaN and nitride alloys, Ga2O3 and oxide alloys, AlN, and BN) materials, devices and systems for applications in electronics (e.g., power electronics and ICs, WBG CMOS and RRAM computing, RF/microwave devices and MMICs, sensors) and photonics (e.g., optoelectronics, waveguides, nonlinear optics, quantum photonics). More details can be found in our Research and Publications.
9/2023—Dawei’s work on Ga2O3 CAVETs was accepted to IEEE Transactions on Electron Devices! Congratulations!