Publications

For a complete list of publications please refer to our google scholar page

2023:

Dhara, S., Dheenan, A., Kalarickal, N. K., Huang, H.L., Islam, A.E., Joishi, C., Fiedler, A., McGlone, J.F., Ringel, S.A., Hwang, J. and Rajan, S., 2023. Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3. Applied Physics Letters, 123(8).

Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan, β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching, Applied Physics Letters 123, 023503 (2023).

Taeyoung Kim, Chandan Joishi, Zhanbo Xia, Nidhin Kurian Kalarickal, Camelia Selcu, Tyson Back, Jonathan Ludwick, Siddharth Rajan. Demonstration of gallium oxide nano-pillar field emitter arrays. AIP Advances 13, 075119 (2023).

Nidhin Kurian Kalarickal, Ashok Dheenan, Joe F McGlone, Sushovan Dhara, Mark Brenner, Steven A Ringel, Siddharth Rajan. “Demonstration of self-aligned β-Ga2O3 delta-doped MOSFETs with current density > 550 mA/mm”, Applied Physics Letters vol.122, 113506 (2023)

2022:

Rahman, M.W., Joishi, C., Kalarickal, N.K, Lee, H. and Rajan, S., 2022, May. Demonstration of BaTiO 3 Integrated kV-class AlGaN/GaN Schottky Barrier Diodes with Record Average Breakdown Electric Field. In 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 341-344). IEEE.

Hettiaratchy, E. C., Wang, B., Dheenan, A., McGlone, J., Kalarickal, N. K., Bagu´es, N., Myers, R. C. (2022). Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 40(6), 062708.

Dhara, S., Kalarickal, N. K., Dheenan, A., Joishi, C., Rajan, S. (2022). β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination. Applied Physics Letters, 121(20), 203501.

Mohammad Wahidur Rahman, Chandan Joishi, Yinxuan Zhu, Nidhin Kurian Kalarickal, and Siddharth Rajan, “High-K BaTiO3 Overlapped AlGaN/GaN Lateral Schottky Barrier Diodes with High Average Breakdown Field”. (submitted to IEEE transactions on electron devices)

Ashok Dheenan, Joe McGlone, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Mark Brenner, Jinwoo Hwang, Steven Ringel, and Siddharth Rajan, “β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett. 121, 113503 (2022)

2021:

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara, Hsien-Lien Huang, A F M Anhar Uddin Bhuiyan, Mohammad Wahidur Rahman, Taeyoung Kim, Zhanbo Xia, Zane Jamal Eddine, Ashok Dheenan, Mark Brenner, Hongping Zhao, Jinwoo Hwang, and Siddharth Rajan. “Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux”, Applied Physics Letters 119, 123503 (2021).

Mohammad Wahidur Rahman, Nidhin Kurian Kalarickal, Hyunsoo Lee, Towhidur Razzak and Siddharth Rajan. “Integration of high permittivity BaTiO3 with AlGaN/GaN for near theoretical breakdown field KV-class transistors”, Applied Physics Letters vol.119, no. 18, Nov.2021. (Editors pick)

Nidhin Kurian Kalarickal, Zhanbo Xia, Hsien-Lien Huang, Wyatt Moore, Yumo Liu, Mark Brenner, Jinwoo Hwang and Siddharth Rajan. “β-(Al0.18Ga0.82)2O3/Ga2O3 double heterojunction transistor with average field of 5.5 MV/cm”, IEEE Electron Device Letters 42 (6), 899-902.

Md M Adnan, Darpan Verma, Zhanbo Xia, Kalarickal, Nidhin Kurian, Siddharth Rajan, Roberto C Myers. “Spectral Measurement of the Breakdown Limit of β-Ga2O3 and Tunnel Ionization of Self-Trapped Excitons and Holes” Physical Review Applied 16 (3), 034011.

Jared M. Johnson, Hsien-Lien Huang, Mengen Wang, Sai Mu, Joel B. Varley, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Kalarickal Nidhin Kurian, Siddharth Rajan, Hongping Zhao, Chris G. Van deWalle, and Jinwoo Hwang “Atomic Scale Investigation of Aluminum Incorporation, Defects, and Phase Stability in β-(AlxGa−1x)2O3 Films”, APL Materials 9 (5), 051103. (Featured article)

2020:

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. Mcglone, Yumo Liu, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel, and Siddharth Rajan. “High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using ultra-thin (1 nm) spacer layer”, Journal of Applied Physics 127, no. 21 (2020): 215706. (Editors pick)

Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, Wyatt Moore, Joe F. McGlone, Aaron R. Arehart, Steven A. Ringel, Hongping Zhao, Siddharth Rajan. “Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors”, IEEE Transactions on Electron Devices 68, no. 1 (2020): 29-35.

Hyun-Soo Lee, Nidhin Kurian Kalarickal, Mohammad Wahidur Rahman, Zhanbo Xia, Wyatt Moore, Caiyu Wang, and Siddharth Rajan. “High Permittivity Dielectric Edge Termination for Vertical High Voltage Devices”, Journal of Computational Electronics 19, 1538–1545 (2020).

Zixuan Feng, AFM Anhar Uddin Bhuiyan, Kalarickal, Nidhin Kurian, Siddharth Rajan,Hongping Zhao. “Mg acceptor doping in MOCVD (010) β-Ga2O3”, Applied Physics Letters 117, no. 22 (2020): 222106.

Xia, Zhanbo, Hao Xue, Chandan Joishi, Joe Mcglone, Nidhin Kurian Kalarickal, Shahadat H. Sohel, Mark Brenner et al. “β-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz”, IEEE Electron Device Letters 40, no. 7 (2019): 1052-1055.

Cheng, Junao, Caiyu Wang, Christopher Freeze, Omor Shoron, Nick Combs, Hao Yang, Nidhin Kurian Kalarickal, Zhanbo Xia, Suzanne Stemmer, Siddharth Rajan and Wu Lu,“High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors.” IEEE Electron Device Letters 41, no. 4 (2020): 621-624.

Cheng, Junao, Hao Yang, Caiyu Wang, Nick Combs, Chris Freeze, Omor Shoron, Wangzhou Wu, Nidhin Kurian Kalarickal, Hareesh Chandrashekhar, Suzanne Stemmer, Siddharth Rajan and Wu Lu. “Nanoscale etching of perovskite oxides for field effect transistor applications.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 38, no. 1 (2020): 012201.

2019:

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, and Siddharth Rajan. “Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3”, Applied Physics Letters 115, no. 15 (2019):152106.

Zhanbo Xia, Caiyu Wang, Nidhin Kurian Kalarickal, Susanne Stemmer, Siddharth Rajan.“Design of transistors using high-permittivity materials”, IEEE Transactions on Electron Devices 66, no. 2 (2019): 896-900.

Xia, Zhanbo, Hareesh Chandrasekar, Wyatt Moore, Caiyu Wang, Aidan J. Lee, Joe McGlone, Nidhin Kurian Kalarickal, Aaaron Arehart, Steven Ringel, Fengyuan Yang and Siddharth Rajan. “Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field.” Applied Physics Letters 115, no. 25 (2019): 252104.