Our EDL Paper on Vertical GaN Power Diode was Reported by Tech Media Semiconductor Today!


Arizona State University in the USA has been studying the effects of gallium nitride (GaN) buffer layer thickness and drift layer doping on the performance of vertical p-n and Schottky barrier diodes [Houqiang Fu et al, IEEE Electron Device Letters, published online 4 April 2017]. Without passivation or field plates, some p-n devices reached breakdown voltages of more than 1000V and achieved specific on-resistances as low as 3mΩ-cm2.