Welcome to Zhao Group at ASU!
Dr. Yuji Zhao has moved to Rice University on July 1, 2021. Both his groups at ASU and Rice will be functional. For ASU matter, please email to [email protected]. For Rice matter, please email to [email protected].
Welcome! We are a semiconductor materials and devices group at Arizona State University, led by Prof. Yuji Zhao (curriculum vitae). Our research focus on advanced electronic and optoelectronic devices based on new materials, currently wide bandgap III-nitride semiconductors. Our current research interests are focused on GaN-based wide bandgap materials and devices for applications in energy efficiency, power electronics, high-temperature memory and ICs, and quantum information.
Our Current Research Projects
- Electronics:
- 1.2 kV-class GaN vertical power transistors (ARPAe PNDIODES)
- High temperature GaN memory devices and ICs for space applications (NASA HOTTech)
- Radiation effects in ultra-wide bandgap AlN/diamond/gallium oxide devices (DTRA YIP)
- Photonics:
- High temperature InGaN solar cells for space application (NASA CAREER and NSF EPMD)
- AlN IR-UV supercontinuum generation and UV optical frequency comb (ARO PECASE)
- Gallium oxide as a new platform for nonlinear optics and quantum photonics
Our Sponsors
- DOE Office of Science
- ARO DURIP
- Army Research Office
- NSF EPMD Program
- NASA HOTTech Program
- DOE ARPAe PNDIODES Program
- DoD DTRA Young Investigator Award
- NASA Early Career Faculty Award
- Science Foundation Arizona Bisgrove Scholar Tenure Track Faculty Award
- Arizona State University Fulton Schools of Engineering
Selective Media Highlights
- President Donald J. Trump Announces Recipients of the Presidential Early Career Award for Scientists and Engineers, White House, July 2019
- First steps to high temperature GaN memory? Compound Semiconductor, Apr 2019
- New memory device can take the heat, IEEE Spectrum, Mar 2019
- ASU Bisgrove Scholar illuminates the future of LED lighting, ASU news, Apr 2018
- ASU engineer showcases NASA research to Congress on Captiol Hill, ASU news, Jan 2018
- Gallium nitride processor: next-generation technology for space exploration, Astrowatch, Phys.org, Spaceflightinsider, ECNMag, Technewsngadgets, ASU news, etc., English and Chinese, Dec 2017
- Aluminum nitride Schottky barrier diodes with breakdown voltage more than 1kV, Silicon Valley Microelectronics, Semiconductor Today, University of Strathclyde, etc., Aug 2017
- Indium gallium nitride solar cells on non-polar and semi-polar substrates, Semiconductor Today, May 2017
- Buffer and drift layer effects on vertical gallium nitride diodes, Semiconductor Today, Apr 2017
- ASU engineer looks to improve next -gen materials for solar cells, Full Circle, Apr 2017
- Thermophotonics: LEDs feed on waste heat, Nature Photonics, Nov. 2015
- ASU engineer nets NASA early career award for solar cell research, ASU Engineering News, Oct 2015
- Science Foundation Arizona names 2015 Bisgrove Scholars, AZEDNews, July 2015
- Overcoming the green gaps, Nature Photonics, Jul 2013
- Semipolar planes delivers stable green LEDs, Compound Semiconductor, Aug 2013
- How LED got their shine back, Science, May 2012
- Conquering LED efficiency droop, Optical Society of America (OSA), Apr 2012
- New LED design drops the droop, Photonics, May, 2012
- Reducing LED droop at high current, SemiconductorToday, Jul 2011