Arizona State University
Spring 2018: EEE 436/591 – Fundamentals of Solid-State Devices (Undergrad/Grad)
Fall 2017: EEE 531 – Semiconductor Device Theory (Grad)
The objective of this course is an advanced understanding of semiconductor physics and the physics and operation of the basic semiconductor devices: pn junctions, metal- semiconductor devices, metal-oxide semiconductor (MOS) capacitors, MOS transistors, and bipolar junction transistors and limits of these devices. Wherever possible the emphasis will be on the conceptual understanding of device operation.
Spring 2017: EEE 598 – MOCVD for III-Nitride Devices (Grad)
Fall 2016: EEE 537 – Semiconductor Optoelectronics (Grad)
Spring 2016: EEE 437/591 – Optoelectronics (Undergrad/Grad)
Fall 2015: EEE 537 – Semiconductor Optoelectronics (Grad)
Spring 2015: EEE 598 – MOCVD for III-Nitride Devices (Grad)
This course is designed to teach graduate students fundamentals on the operation of metalorganic chemical vapor deposition (MOCVD), and how it can be used for the growth of III-nitride semiconductors and structures, and the application of III-nitride materials for specific devices, including light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and power transistors.
Fall 2014: EEE 537 – Semiconductor Optoelectronics (Grad)
This course is designed to teach junior graduate students fundamental optical properties such as quantum theory of radiation, absorption processes, radiative processes, nonradiative processes, photoluminescence of bulk semiconductors, semiconductor heterojunctions, quantum wells, and superlattices. Applications of these materials and properties in optoelectronic devices such as lasers, photodetectors, and solar cells will also be discussed.
University of California, Santa Barbara
Winter 2013 and Winter 2014: ECE 162B/MAT 162B – Solid State Physics (Undergrad), Lecturer for Prof. S. P. DenBaars
Spring 2013: ECE 215C/MAT 220C – Semiconductor Device Processing (Grad), Lecturer for Prof. S. Nakamura