News

Bingcheng won the prestigious ASU Outstanding Research Award! Congratulations!

The Outstanding Research Award recognizes graduate and professional students who exemplify excellence in research on all ASU campuses. The award aims at fostering the development of innovative projects or research of interdisciplinary character that demonstrate a positive impact on the academic/local community with a notable contribution to their field.

4/2026

Bingcheng’s work on high-current-density AlN quasi-vertical diodes has been published in APL Electronic Devices! Congratulations!

3/2026

Junzhe’s first paper on lateral AlN SBDs has been published in PSSA! Congratulations!

12/2025

Bingcheng’s work on AlN trench MESFETs with gate trench treatment has been published in APL! Congratulations!

12/2025

Bingcheng’s work on AlN MOSFETs has been published in IEEE TMAT! Congratulations!

8/2025

Dinusha joined Texas State University as an Assistant Professor, and Ziyi joined Diamond Foundry as a senior device engineer. Big congrats to both of you, and best wishes for your future career!

8/2025

Five abstracts were accepted to DRC/EMC 2025 for oral presentations! Congratulations!

4/2025

Dawei’s work on 10kV AlGaN/GaN heterojunction diodes has been published in IEEE EDL! Congratulations!

4/2025

Dinusha’s work on high-temperature performance of AlN SBD has been published on IEEE TED! Congratulations!

4/2025

Jayashree was selected for the prestigious NSF Graduate Research Fellowship Program (GRFP) that supports outstanding graduate students in STEM. Congratulations!

4/2025

Dinusha won the 2025 Palais Outstanding Doctoral Award due to his extraordinary record of accomplishments! This is the highest honor for the ECEE PhD students and awarded to only one student each year.

3/2025

Timothy was selected for the TSMC Award under the FURI. Congratulations!

2/2025

Dinusha won the top honor of ECEE Graduate Research Day Award! Congratulations!

1/2025

Dinusha’s work on studying the high-temperature characteristics of AlN diodes was accepted to IEEE TED. Congratulations!

1/2025

Our work on 2kV AlN MESFETs on AlN substrates has been featured by Compound Semiconductor and Semiconductor Today.

1/2025

Bingcheng’s work on high-voltage AlN MESFETs on AlN substrates has been published in Applied Physics Express. Congratulations.

11/2024

Our work on AlN-on-AlN Schottky barrier diodes with ultralow ideality factor and record high breakdown field were featured by Compound Semiconductors.

10/2024

Ziyi’s paper on GaN HEMTs with low-T CVD BN gate dielectric has been published in Applied Physics Letters. Congratulations.

07/2024

Dinusha’s paper on AlN power diodes with ultra-low ideality factors has been published in Applied Physics Express. Congratulations!

07/2024

Dinusha’s paper has been selected as “Highlights of 2023” in Applied Physics Express! Congratulations.

4/2024

Our work on high-voltage AlN Schottky barrier diodes has been featured by Compound Semiconductor. 

3/2024

Dr. Fu has been selected for the NSF CAREER Award for his project on developing high-performance UWBG power devices. (ASU News, CS Magazine)

2/2024

Six papers were accepted to 2024 MRS Spring Meeting! Congratulations to Dinusha, Dawei, Bingcheng, and Ziyi!

2/2024

Dinusha’s work on the first 3kV AlN power diodes was accepted to Applied Physics Express! Congratulations!

12/2023

Dawei’s work on the reliability study of vertical GaN PIN diodes was accepted to IEEE Transactions on Electron Devices! Congratulations!

12/2023

Dinusha’s work on Ga2O3/NiO heterojunctions was highlighted as “Spotlights 2023” in Applied Physics Express! Congratulations!

9/2023

Our patent on power electronics is highlighted in ASU News “ASU ranks No. 8 among US universities issued US utility patents in 2022“.

9/2023

Dawei’s work on Ga2O3 CAVETs was accepted to IEEE Transactions on Electron Devices! Congratulations

9/2023

Dinusha’s work on Ga2O3/NiO heterojunctions was accepted to Applied Physics Express! Congratulations!

9/2023

Dinusha won the prestigious ASU Outstanding Research Award! Congratulations!

The Outstanding Research Award recognizes graduate and professional students that exemplify excellence in research on all ASU campuses. The award aims at fostering the development of innovative projects or research of interdisciplinary character that demonstrate a positive impact on the academic/local community with a notable contribution to their field.

4/2023

Jayashree was invited to participate in 2023 Summer Undergraduate Research Fellowship (SURF) program at Stanford University’s School of Engineering. Congratulations!

This is a highly prestigious program, where she will join 29 other SURF scholars from around the world for a summer full of engaging research, community building, and professional development.

3/2023

Dinusha’s paper on AlGaO SBDs was accepted to Journal of Vacuum Science & Technology A. Congratulations!

1/2023

Jayashree was selected to participate in the ASU Grand Challenges Scholarship Program (GCSP) and ASU Fulton Undergraduate Research Initiative (FURI). Congratulations!

GCSP is top honor for Fulton Engineering undergraduate students, endorsed by both ASU and the National Academy of Engineering (NAE). And FURI is top honor for Fulton Engineering undergraduate students to conduct high-level research.

12/2022

Our review paper on InGaN solar cells was published in Materials Today Energy. Congratulations!

12/2022

Dr. Fu was selected as the winner of the Electronics 2022 Young Investigator Award. Congratulations!

11/2022

Our recent paper on GaN-on-GaN diodes with avalanche capability enabled by hydrogen plasma treatment was published in Applied Physics Letters. Congratulations!

08/2022

Our recent invited review on ultrawide bandgap materials was published in the Oxford Open Materials Science. Congratulations!

05/2022

Our recent invited review on GaN intersubband transition was published in the Journal of Applied Physics. Congratulations!

05/2022

Dinusha’s work on AlGaO was accepted as LATE NEWS in 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022). Congratulations!

05/2022

Dinusha and Dawei’s conference abstracts were accepted to 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022). Congratulations!

03/2022

Two papers were accepted to 2022 MRS Spring Meeting! Congratulations!

03/2022

Dinusha’s paper on Ga2O3/GaN heterojunction p-n diodes was accepted to IEEE Journal of  the Electron Devices Society. Congratulations!

01/2022

Dawei’s paper on designing delta-doped AlGaO/GaO HEMTs was accepted to IEEE Transactions on Electron Devices. Congratulations!

11/2021

Dr. Fu was awarded the ISU Regents Innovation Fund Award.

09/2021

Our comprehensive review papers (Part I and Part II) on vertical GaN power devices are published in Transactions on Electron Devices!

07/2021

Our review paper on selective area doping and regrowth for vertical GaN power devices is accepted to Materials Today (Impact Factor: 26.416), which is one of the most highly respected sources of news and reviews in materials science. Congratulations!

04/2021

Dinusha and Dawei’s conference abstracts were accepted to 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021). Congratulations!

04/2021

Two papers were accepted to 63rd Electronic Materials Conference (63rd EMC)! Congratulations!

03/2021

Dinusha’s conference abstract was accepted as the Late News to the 2021 MRS Spring Meeting for presentation! Congratulations!

02/2021

Dawei’s conference abstract was accepted to the 2021 MRS Spring Meeting for presentation! Congratulations!

01/2021

Dawei joined our group as a PhD student in the ECpE department. Welcome!

01/2021

Dinusha joined our group as a PhD student in the ECpE department. Welcome!

01/2021

New paper on Ga2O3 film with record-high mobility using TMGa MOCVD growth was accepted to Applied Physics Letters in the  Ultrawide Bandgap Semiconductor special issue. Congratulations!

12/2020

New paper on (001) and (-201) Ga2O3 DLTS measurements was published in Journal of Applied Physics. Congratulations!

12/2020

“Better etching enhances selective area doping for vertical GaN power devices,” Compound Semiconductor.

12/2019

“First steps to high temperature GaN memory?” Compound Semiconductor.

04/2019