Research

Compact modeling of GaN HEMTs down to Cryogenic Temperature

Wide-bandgap III-Nitride devices excel in high-frequency and high-power applications due to their superior electron transport (high mobility, high saturation velocity) and high voltage tolerance. GaN HEMTs are especially promising for cryogenic systems—including space, superconducting electronics, and quantum computing—thanks to their polarization-induced 2DEG and enhanced low-temperature mobility. We develop a compact model capturing large- and small-signal GaN HEMT behavior across a wide temperature range, based on Landauer transport and two-dimensional electrostatics, ensuring accuracy and computational efficiency for SPICE-level circuit simulation. [Paper]

TCAD Hydrodynamic Simulation of Wide Bandgap Material based Devices

TCAD hydrodynamic simulation captures critical non-equilibrium effects such as carrier heating and velocity overshoot, allowing accurate prediction of high-field and short-channel behavior. This capability provides deep insight into performance limitations and guides device optimization for enhanced speed, efficiency, and reliability.

At DEMO LAB, we leverage Synopsys Sentaurus and Silvaco ATLAS to simulate a wide range of device structures. By calibrating these simulations with experimental data, we gain a detailed understanding of device physics and explore design strategies for performance improvement.