Research

This project develops physics-based compact models for delta-doped β-Ga₂O₃ MOSFETs to advance next-generation RF power electronics. We combine electrostatics, carrier transport, and thermal modeling to capture quantum confinement, bias-dependent electron distribution, parasitic resistance, and self-heating—a key challenge arising from the material’s low thermal conductivity. Validated against experimental data and TCAD simulations, these models support circuit simulation and systematic exploration of device geometry and thermal management strategies. Our goal is to guide device optimization by evaluating trade-offs among gate scaling, electrical performance, and heat dissipation.

This project explores scandium aluminum nitride (ScAlN) ferroelectric heterostructures for next-generation energy-efficient transistors. We develop physics-based compact models that connect ferroelectric polarization dynamics with channel charge in ScAlN/AlN/GaN structures, capturing steady-state behavior and transient negative capacitance. Validated against numerical simulations and calibrated using experimental polarization data, these models enable circuit simulation in Verilog-A and Cadence Spectre. Our goal is to guide device design by understanding how ferroelectricity can enhance gate control and support low-power switching.

TCAD hydrodynamic simulation captures critical non-equilibrium effects such as carrier heating and velocity overshoot, allowing accurate prediction of high-field and short-channel behavior. This capability provides deep insight into performance limitations and guides device optimization for enhanced speed, efficiency, and reliability.

At DEMO LAB, we leverage Synopsys Sentaurus and Silvaco ATLAS to simulate a wide range of device structures. By calibrating these simulations with experimental data, we gain a detailed understanding of device physics and explore design strategies for performance improvement.