Houqiang Fu received his B.S. degree summa cum laude in Material Physics from Wuhan University, China in 2014. He joined the group in Aug. 2014 and graduated with a Ph.D degree in May 2019. He received Joseph Palais Outstanding Doctoral Award for this Ph.D dissertation, which is the highest honor for ASU ECEE Ph.D students. He is now a postdoctoral researcher at ASU. His research interests include GaN based optoelectronics and power electronics, and other novel wide bandgap semiconductors such as AlN, Ga2O3, diamond, etc.
Houqiang graduated with a Ph.D in 2019. He is now an Assistant Professor at Iowa State University.