Research Projects
Our group develops next-generation electronic devices and systems by leveraging the unique properties of low-dimensional materials. We investigate how nanoscale phenomena can be harnessed to enable new paradigms in computing, sensing, and memory, and we translate these concepts into functional device and circuit technologies. Our research bridges materials, devices, and system-level performance, with a focus on emerging computing hardware and reliable operation in extreme environments, including radiation and cryogenic conditions. Through a combination of fabrication, characterization, and modeling, we aim to create scalable and robust electronic technologies for applications in advanced computing, space, and defense.
We are driven by both fundamental curiosity and the desire to translate new materials and devices into real-world technologies.
Current projects
Title: Next-generation epitaxial 2D high-mobility semiconductors
Sponsor: Applied Materials (AMAT)
Co-Principal Investigator: Ivan Sanchez Esqueda
Title: Single-Crystal monolayer MoS2 and WSe2 by CVD and “Etch-Regrow” for 2D stacked nanosheet FETs
Sponsor: Applied Materials (AMAT)
Principal Investigator: Ivan Sanchez Esqueda
Title: Radiation-Hardened Wide-Temperature Mixed-Signal Library in a 22nm FDSOI CMOS Process (Phase II)
Sponsor: NASA/JPL
Principal Investigator: Ivan Sanchez Esqueda
Title: Graphene as oxygen barrier and analysis tool to elucidate reliability of RRAM
Sponsor: Applied Materials (AMAT)
Principal Investigator: Ivan Sanchez Esqueda
Title: Quaternary 2D bismuth oxychalcogenides for ultrasensitive broadband phototransistors
Sponsor: ARMY
Co-Principal Investigator: Ivan Sanchez Esqueda
Previous projects
Title: Spin-Orbitronic devices using 2D Rashba Janus Crystals as Active Materials
Sponsor: National Science Foundation (NSF)
Co-Principal Investigator: Ivan Sanchez Esqueda
Title: Cryo-CMOS Integrated Circuits
Sponsor: Army Research Office (ARO)
Principal Investigator: Ivan Sanchez Esqueda
Title: FET: Small: 2D Material Compound Synapse Arrays for Robust In-Memory and Neuromorphic Computing (2DNeuro)
Sponsor: National Science Foundation (NSF)
Principal Investigator: Ivan Sanchez Esqueda
Title: Radiation and Reliability Characterization Chips (RAREChips)
Sponsor: DOD-NAVY-NAVSEA-NSWC: Crane
Principal Investigator: Ivan Sanchez Esqueda
Title: Characterization of Total Ionizing Dose Response in 22 nm FDX CMOS Technology
Sponsor: Jet Propulsion Laboratory (JPL)
Co-Principal Investigator: Ivan Sanchez Esqueda
Title: Radiation-Hardened Wide-Temperature Analog/Mixed-Signal Library in a 22nm FDSOI CMOS process
Sponsor: National Aeronautics Space Administration (NASA)
Principal Investigator: Ivan Sanchez Esqueda
Title: Predictive device modeling for radiation effects through machine learning
Sponsor: DOD: Defense Microelectronics Activity (DMEA)
Principal Investigator: Ivan Sanchez Esqueda
Title. Innovative Modeling for the Physics of Aging in Advanced CMOS technologies (IMPAACT)
Sponsor: Defense Advanced Research Project Agency (DARPA)
Title: Radiation effects on carbon-based nanoelectronics (RADCNT)
Sponsor: Defense Threat Reduction Agency (DTRA)
Title: Integrity and Reliability of Integrated Circuits (IRIS), Phase I and II.
Sponsor: Defense Advanced Research Project Agency (DARPA)
Title. Trusted Integrated Circuits (TIC).
Sponsor: Intelligence Advanced Research Projects Activity (IARPA)